利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.012 秒)

    Completely buried contact holes and methods of forming same
    2.
    发明授权
    Completely buried contact holes and methods of forming same 失效
    完全埋入接触孔及其形成方法

    公开(公告)号：US5950105A

    公开(公告)日：1999-09-07

    申请号：US821067

    申请日：1997-03-20

    申请人： Woo-sang Jung ,  Gil-heyun Choi ,  Ji-soon Park ,  Byeong-jun Kim

    发明人： Woo-sang Jung ,  Gil-heyun Choi ,  Ji-soon Park ,  Byeong-jun Kim

    IPC分类号： H01L23/522 ,  H01L21/28 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532

    CPC分类号： H01L23/485 ,  H01L23/53223 ,  H01L2924/0002

    摘要： A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole. The method includes forming in an insulator adjacent a contact hole a region of material of a higher thermal conductivity than the insulating layer, depositing a metal in the contact hole and heating the metal, the insulating layer and the region of material of a higher thermal conductivity to flow the metal into the contact hole so as to completely bury the contact hole.

    摘要翻译： 公开了一种用于形成完全埋入的接触孔的方法和在互连结构中具有完全埋入的接触孔的半导体器件。 完全埋入的接触孔包括具有形成在其中的接触孔的第一导热性的第一绝缘层。 形成在与接触孔的位置相邻的第一绝缘层中的第二导热材料的区域。 第二热导率大于第一热导率，使得材料区域的热导率大于绝缘层的热导率。 在孔中形成金属，完全埋入接触孔。 该方法包括在绝缘体中邻近形成绝缘层的导热系数较高的材料区域，在接触孔中沉积金属并加热金属，绝缘层和导热系数较高的材料区域 将金属流入接触孔，以完全埋入接触孔。

    Completely buried contact holes
    4.
    发明授权
    Completely buried contact holes 失效
    完全埋入接触孔

    公开(公告)号：US5982039A

    公开(公告)日：1999-11-09

    申请号：US48391

    申请日：1998-03-26

    申请人： Woo-sang Jung ,  Gil-heyun Choi ,  Ji-soon Park ,  Byeong-jun Kim

    发明人： Woo-sang Jung ,  Gil-heyun Choi ,  Ji-soon Park ,  Byeong-jun Kim

    IPC分类号： H01L23/522 ,  H01L21/28 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532

    CPC分类号： H01L23/485 ,  H01L23/53223 ,  H01L2924/0002

    摘要： A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole. The method includes forming in an insulator adjacent a contact hole a region of material of a higher thermal conductivity than the insulating layer, depositing a metal in the contact hole and heating the metal, the insulating layer and the region of material of a higher thermal conductivity to flow the metal into the contact hole so as to completely bury the contact hole.

    摘要翻译： 公开了一种用于形成完全埋入的接触孔的方法和在互连结构中具有完全埋入的接触孔的半导体器件。 完全埋入的接触孔包括具有形成在其中的接触孔的第一导热性的第一绝缘层。 形成在与接触孔的位置相邻的第一绝缘层中的第二导热材料的区域。 第二热导率大于第一热导率，使得材料区域的热导率大于绝缘层的热导率。 在孔中形成金属，完全埋入接触孔。 该方法包括在绝缘体中邻近形成绝缘层的导热系数较高的材料区域，在接触孔中沉积金属并加热金属，绝缘层和导热系数较高的材料区域 将金属流入接触孔，以完全埋入接触孔。

    Completely buried contact holes
    9.
    发明授权
    Completely buried contact holes 失效

    公开(公告)号：US5834847A

    公开(公告)日：1998-11-10

    申请号：US688606

    申请日：1996-07-30

    申请人： Woo-sang Jung ,  Gil-heyun Choi ,  Ji-soon Park ,  Byeong-jun Kim

    发明人： Woo-sang Jung ,  Gil-heyun Choi ,  Ji-soon Park ,  Byeong-jun Kim

    IPC分类号： H01L23/522 ,  H01L21/28 ,  H01L21/768 ,  H01L23/485 ,  H01L23/532 ,  H01L23/528

    CPC分类号： H01L23/485 ,  H01L23/53223 ,  H01L2924/0002

    摘要： A method for forming a completely buried contact hole and a semiconductor device having a completely buried contact hole in an interconnection structure is disclosed. The completely buried contact hole includes a first insulating layer of a first thermal conductivity having a contact hole formed therein. A region of material of a second thermal conductivity formed in the first insulating layer adjacent the location of the contact hole. The second thermal conductivity is greater than the first thermal conductivity such that the thermal conductivity of the region of material is greater than the thermal conductivity of the insulating layer. A metal is formed in the hole which completely buries the contact hole. The method includes forming in an insulator adjacent a contact hole a region of material of a higher thermal conductivity than the insulating layer, depositing a metal in the contact hole and heating the metal, the insulating layer and the region of material of a higher thermal conductivity to flow the metal into the contact hole so as to completely bury the contact hole.