摘要:
A display, including a substrate, a plurality of signal wires, a first gate electrode, a second gate electrode, a gate insulating layer, a first semiconductor layer including a first source/drain region doped with a p-type impurity, a second semiconductor layer including a second source/drain region doped with an n-type impurity, a planarization layer having a first contact hole exposing a portion of the first source/drain region, a second contact hole exposing a portion of the second source/drain region, and a third contact hole exposing a portion of any one of the signal wires, a first connection electrode, a second connection electrode, a lower electrode, an organic film layer, and an upper electrode.
摘要:
A light emitting display including a plurality of scan lines; a plurality of data lines crossing the scan lines; a plurality of pixels defined by the scan lines and the data lines; and a light emitting device formed on a pixel and comprising a first electrode and a second electrode. A pixel connected to an nth data line includes a switching transistor that turns on in response to a selection signal supplied from a scan line; a storage capacitor to store a voltage corresponding to a data signal supplied from the nth data line when the switching transistor is turned on; and a driving transistor to supply a current corresponding to the voltage stored in the storage capacitor to the first electrode. The storage capacitor is formed between the first electrode and an (n+1)th data line.
摘要:
A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.
摘要:
An organic light emitting diode display may have a power supply line that is coplanar with a first pixel electrode of an organic light emitting element. The power supply line, first source and drain electrodes of a first thin film transistor (TFT), second source and drain electrodes of a second TFT, a data line, and an upper electrode of a storage capacitor constitute source/drain wire lines. In addition to the power supply line, any one(s) of or all of the source/drain wire lines may be coplanar with the first pixel electrode.
摘要:
A reflection type liquid crystal display device includes first and second gate lines, first and second data lines intersecting said first and second gate lines, an insulating layer covering said data lines, and a pixel electrode overlapping the first and second data lines in order to increase the aperture ratio. The overlapped area between the pixel electrode and the first data line and the areas between the pixel electrode and the second data line are substantially the same with each other. Each overlapped area covers substantially half of the length of the data line. Consequently, the reflective pixel electrodes cover the data lines substantially on the whole.
摘要:
An electro-luminescence display (ELD) wherein a voltage supply line is separated into a plurality of lines to reduce the number of pixels connected to each line. In the ELD, a pixel array has a number of pixels, each of which includes an electro-luminescence device having a luminescent layer made from an-electro-luminescent material, an anode electrode and a cathode electrode serving as a common electrode. The pixel array is arranged in an active matrix type. A gate driving circuit and a data driving circuit are connected, via a number of scanning electrode wiring and a number of data electrode wiring, respectively, to the pixel array, for switching the pixels to selectively drive the pixels. First and second supply voltages are applied from an external circuit to the first and second supply terminals. First and second power supply lines couple the first and second voltage supply terminals with the pixel array. The pixels within the array are divided into blocks and pixels within a block are all connected to a supply line for that block. Accordingly, excessive current is not generated, which prevents head damage to the ELD and thus improves reliability.
摘要:
A light emitting display for improving image quality and a Thin Film Transistor (TFT) includes at least one data line for transmitting a data signal, at least one scanning line for transmitting a selected signal, and at least one pixel electrically connected to the data line and the scanning line. The pixel includes a first TFT for responding to the selected signal and transmitting the data signal to an organic light emitting device, a capacitor electrically connected to the first TFT and storing a voltage corresponding to the transmitted data signal, a second TFT connected to the capacitor and supplying an organic light emitting device with a current corresponding to the data signal selected by the selected signal. The widths of respective channel regions of the first TFT are different from each other to reduce the kickoff voltage and improve the driving ability of the TFT, thereby improving the image quality of the light emitting display.
摘要:
In a light emitting display and a fabrication method thereof, a stripe pattern displayed due to characteristic differences of a driving transistor is prevented, thereby enhancing picture quality. The light emitting display comprises: a plurality of light emitting devices formed adjacent to a region where data and scan lines cross each other; and a plurality of pixel circuits, each including a driving transistor for supplying current corresponding to a data signal to a respective one of the light emitting devices. The positions of the driving transistors are different from each other with respect to at least one of horizontal and vertical directions. With this configuration, a stripe pattern is prevented from appearing perpendicular to a scanning direction of a line beam emitted from an excimer laser during the fabrication method.
摘要:
A method of manufacturing an active matrix substrate that enables increased productivity due to a reduction in the number of patterning processes and low generation of particles during the patterning processes. The method includes forming a patterned electrode on a substrate, and covering the first electrode with an insulating film. A mono-crystalline semiconductor layer is then formed on the insulating film by attaching a first layer formed on a surface of a semiconductor wafer to the first insulating film, and peeling off a portion of the semiconductor wafer. The semiconductor layer is then patterned and doped, in part, by utilizing the patterned electrode as a photo mask for light illuminated from a lower side of the substrate. This results in part in mono-crystalline active layers for thin film transistors, which are then configured to form a pixel for an active matrix substrate.
摘要:
A display device displays an image having a substantially uniform brightness by compensating for variations of the threshold voltages of driving transistors and compensating for the deterioration of an organic light emitting diode. A pixel includes an organic light emitting diode, two transistors, a storage capacitor, and a compensation unit. A driving transistor supplies a current to an OLED corresponding to the voltage in the storage capacitor. The compensation unit controls a voltage of a gate electrode of the driving transistor corresponding to a deterioration of the organic light emitting diode, and couples one electrode of the driving transistor to the data line during a compensation period, during which a threshold voltage of the driving transistor is compensated.