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    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    1.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
    半导体发光器件及其制造方法

    公开(公告)号：US20130153920A1

    公开(公告)日：2013-06-20

    申请号：US13472310

    申请日：2012-05-15

    申请人： Yasuharu SUGAWARA

    发明人： Yasuharu SUGAWARA

    IPC分类号： H01L33/02 ,  H01L33/48

    CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405

    摘要： According to an embodiment, a semiconductor light emitting device includes a light emitting body including a semiconductor light emitting layer, a support substrate supporting the light emitting body, and a bonding layer provided between the light emitting body and the support substrate, the bonding layer bonding the light emitting body and the support substrate together. The device also includes a first barrier metal layer provided between the light emitting body and the bonding layer, and an electrode provided between the light emitting body and the first barrier metal layer. The first barrier layer includes a first layer made of nickel and a second layer made of a metal having a smaller linear expansion coefficient than nickel, and the first layer and the second layer are alternately disposed in a multiple-layer structure. The electrode is electrically connected to the light emitting body.

    摘要翻译： 根据实施例，半导体发光器件包括包括半导体发光层的发光体，支撑发光体的支撑基板和设置在发光体与支撑基板之间的接合层，接合层接合 发光体和支撑基板一起。 该装置还包括设置在发光体和接合层之间的第一阻挡金属层，以及设置在发光体与第一阻挡金属层之间的电极。 第一阻挡层包括由镍制成的第一层和具有比镍更小的线性膨胀系数的金属制成的第二层，并且第一层和第二层交替地以多层结构设置。 电极与发光体电连接。

    Semiconductor light emitting device and semiconductor light emitting apparatus
    4.
    发明授权
    Semiconductor light emitting device and semiconductor light emitting apparatus 有权
    半导体发光器件和半导体发光器件

    公开(公告)号：US07462869B2

    公开(公告)日：2008-12-09

    申请号：US11685375

    申请日：2007-03-13

    申请人： Kenichi Ohashi ,  Yasuhiko Akaike ,  Hitoshi Sugiyama ,  Yasuharu Sugawara

    发明人： Kenichi Ohashi ,  Yasuhiko Akaike ,  Hitoshi Sugiyama ,  Yasuharu Sugawara

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/22

    摘要： A first semiconductor light emitting device includes: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major surface, and is translucent to light in a first wavelength band. The light emitting layer is selectively provided in a first portion on the first major surface of the transparent substrate and configured to emit light in the first wavelength band. The roughened region is provided in a second portion different from the first portion on the first major surface. A second semiconductor light emitting device includes: a transparent substrate; a light emitting layer; a first electrode; and at least one groove. The groove is provided on the second major surface of the transparent substrate and extends from a first side face to a second side face opposing the first side face of the transparent substrate.

    摘要翻译： 第一半导体发光器件包括：透明衬底; 发光层; 和一个粗糙的地区。 透明基板具有第一主表面和第二主表面，并且对于在第一波长带中的光是半透明的。 发光层选择性地设置在透明基板的第一主表面上的第一部分中，并且被配置为发射第一波长带中的光。 粗糙区域设置在与第一主表面上的第一部分不同的第二部分中。 第二半导体发光器件包括：透明衬底; 发光层; 第一电极; 和至少一个凹槽。 沟槽设置在透明基板的第二主表面上，并从第一侧面延伸到与透明基板的第一侧面相对的第二侧面。

    Semiconductor light emitting device and method for manufacturing same
    7.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 失效
    半导体发光器件及其制造方法

    公开(公告)号：US08723336B2

    公开(公告)日：2014-05-13

    申请号：US13472310

    申请日：2012-05-15

    申请人： Yasuharu Sugawara

    发明人： Yasuharu Sugawara

    IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/267 ,  H01L29/16 ,  H01L29/161 ,  H01L29/167 ,  H01L29/18 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L21/00

    CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405

    摘要： According to an embodiment, a semiconductor light emitting device includes a light emitting body including a semiconductor light emitting layer, a support substrate supporting the light emitting body, and a bonding layer provided between the light emitting body and the support substrate, the bonding layer bonding the light emitting body and the support substrate together. The device also includes a first barrier metal layer provided between the light emitting body and the bonding layer, and an electrode provided between the light emitting body and the first barrier metal layer. The first barrier layer includes a first layer made of nickel and a second layer made of a metal having a smaller linear expansion coefficient than nickel, and the first layer and the second layer are alternately disposed in a multiple-layer structure. The electrode is electrically connected to the light emitting body.

    摘要翻译： 根据实施例，半导体发光器件包括包括半导体发光层的发光体，支撑发光体的支撑基板和设置在发光体与支撑基板之间的接合层，接合层接合 发光体和支撑基板一起。 该装置还包括设置在发光体和接合层之间的第一阻挡金属层，以及设置在发光体与第一阻挡金属层之间的电极。 第一阻挡层包括由镍制成的第一层和具有比镍更小的线性膨胀系数的金属制成的第二层，并且第一层和第二层交替地以多层结构设置。 电极与发光体电连接。

    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND STACKED STRUCTURE BODY
    8.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND STACKED STRUCTURE BODY 审中-公开
    制造半导体发光器件和堆叠结构体的方法

    公开(公告)号：US20110133216A1

    公开(公告)日：2011-06-09

    申请号：US12876007

    申请日：2010-09-03

    申请人： Yasuharu SUGAWARA

    发明人： Yasuharu SUGAWARA

    IPC分类号： H01L33/08 ,  H01L33/00

    CPC分类号： H01L33/0079 ,  H01L21/268 ,  H01L33/0095

    摘要： According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a plurality of semiconductor stacked bodies on a first major surface of a support substrate with a gap between two neighboring semiconductor stacked bodies. The semiconductor stacked bodies includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The method can bond the plurality of semiconductor stacked bodies to one other support substrate with a bonding member. In addition, the method can remove the support substrate from the plurality of semiconductor stacked bodies by irradiating the plurality of semiconductor stacked bodies with a laser light from a second major surface of the support substrate on a side opposite to the first major substrate. The bonding member is not irradiated with the laser light.

    摘要翻译： 根据一个实施例，公开了一种用于制造半导体发光器件的方法。 该方法可以包括在支撑基板的第一主表面上形成多个半导体层叠体，并在两个相邻的半导体层叠体之间具有间隙。 半导体层叠体包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该方法可以将多个半导体层叠体与一个接合部件连接到另一个支撑基板上。 此外，该方法可以通过在与第一主要基板相对的一侧上来自支撑基板的第二主表面的激光照射多个半导体堆叠体来从多个半导体堆叠体中去除支撑基板。 接合部件不用激光照射。

    WAFER INCLUDING A REINFORCING FLANGE FORMED UPRIGHT AT A PERIPHERY AND METHOD FOR MANUFACTURING THE SAME
    9.
    发明申请
    WAFER INCLUDING A REINFORCING FLANGE FORMED UPRIGHT AT A PERIPHERY AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    包括在外围设备上形成加强法兰的波形及其制造方法

    公开(公告)号：US20100207249A1

    公开(公告)日：2010-08-19

    申请号：US12769868

    申请日：2010-04-29

    申请人： Yasuharu SUGAWARA ,  Motoshige KOBAYASHI

    发明人： Yasuharu SUGAWARA ,  Motoshige KOBAYASHI

    IPC分类号： H01L29/02 ,  H01L21/71

    CPC分类号： H01L29/0657 ,  H01L21/02035 ,  H01L21/78 ,  H01L29/66348

    摘要： A wafer with an orientation notch being cut in a portion of its circumference, the wafer includes: a reinforcing flange formed upright at periphery; and a thin section surrounded by the reinforcing flange and having a smaller thickness than the reinforcing flange. The reinforcing flange includes a circumferential portion formed upright along the circumference and a notch portion formed upright near the orientation notch, and a width of the circumferential portion as viewed parallel to a major surface of the wafer is smaller than a depth of the orientation notch as viewed parallel to the major surface.

    摘要翻译： 具有在其圆周的一部分上被切割的取向凹口的晶片，所述晶片包括：在周边竖立形成的加强凸缘; 以及由加强凸缘包围并且具有比加强凸缘更小的厚度的薄部分。 加强凸缘包括沿着圆周竖直形成的圆周部分和在定位凹口附近形成的切口部分，并且与晶片的主表面平行的圆周部分的宽度小于定向切口的深度， 平行于主表面观察。