公开(公告)号：US08742395B2

公开(公告)日：2014-06-03

申请号：US13598367

申请日：2012-08-29

Applicant: Akira Tanaka ,  Yoko Motojima

Inventor： Akira Tanaka ,  Yoko Motojima

IPC: H01L33/06

CPC classification number: H01L33/38 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405

Abstract: In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode and a second electrode. A first semiconductor layer is broken into several pieces. Light is taken out from a light emitting layer side to a third semiconductor layer side. The first electrode includes a first region connected to the first semiconductor layer and a second region directly connected to the second semiconductor layer. The second electrode is connected to the third semiconductor layer, is provided above the second region from an upper direction of view, and has a thin wire shape or a dot shape.

Abstract translation: 在一个实施例中，半导体发光器件包括堆叠结构，第一电极和第二电极。 第一半导体层被分成几个部分。 从发光层侧向第三半导体层侧取出光。 第一电极包括连接到第一半导体层的第一区域和直接连接到第二半导体层的第二区域。 第二电极连接到第三半导体层，从上方向设置在第二区域的上方，具有细线形状或点状。

公开(公告)号：US20130181187A1

公开(公告)日：2013-07-18

申请号：US13598367

申请日：2012-08-29

Applicant: Akira TANAKA ,  Yoko Motojima

Inventor： Akira TANAKA ,  Yoko Motojima

IPC: H01L33/06

CPC classification number: H01L33/38 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405

Abstract: In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode and a second electrode. A first semiconductor layer is broken into several pieces. Light is taken out from a light emitting layer side to a third semiconductor layer side. The first electrode includes a first region connected to the first semiconductor layer and a second region directly connected to the second semiconductor layer. The second electrode is connected to the third semiconductor layer, is provided above the second region from an upper direction of view, and has a thin wire shape or a dot shape.

Abstract translation: 在一个实施例中，半导体发光器件包括堆叠结构，第一电极和第二电极。 第一半导体层被分成几个部分。 从发光层侧向第三半导体层侧取出光。 第一电极包括连接到第一半导体层的第一区域和直接连接到第二半导体层的第二区域。 第二电极连接到第三半导体层，从上方向设置在第二区域的上方，具有细线形状或点状。

公开(公告)号：US20130112943A1

公开(公告)日：2013-05-09

申请号：US13595755

申请日：2012-08-27

Applicant: Akira TANAKA ,  Yoko MOTOJIMA

Inventor： Akira TANAKA ,  Yoko MOTOJIMA

IPC: H01L33/04

CPC classification number: H01L33/06 ,  H01L33/38 ,  H01L2224/13

Abstract: According to one embodiment, in a semiconductor light emitting device, a light emitting layer is partially provided on a first semiconductor layer of a first conductivity type, and has a multiple quantum well structure made by alternately laminating well layers having a first impurity concentration of the first conductivity type and barrier layers having a second impurity concentration of the first conductivity type higher than the first impurity concentration. A second semiconductor layer of a second conductivity type is provided on the light emitting layer, and has a single composition and uniform bandgap. A first distance between a first electrode provided on the first semiconductor layer and a second electrode provided on the second semiconductor layer in a direction parallel to the light emitting layer is larger than a second distance between the first electrode and the second electrode in a direction perpendicular to the light emitting layer.

Abstract translation: 根据一个实施例，在半导体发光器件中，发光层部分地设置在第一导电类型的第一半导体层上，并且具有通过交替层叠具有第一导电类型的第一杂质浓度的阱层而制成的多量子阱结构 第一导电类型和阻挡层，其具有高于第一杂质浓度的第一导电类型的第二杂质浓度。 第二导电类型的第二半导体层设置在发光层上，具有单一的组成和均匀的带隙。 设置在第一半导体层上的第一电极和设置在第二半导体层上的平行于发光层的方向上的第二电极之间的第一距离大于第一电极和第二电极之间的垂直方向上的第二距离 到发光层。

公开(公告)号：US20120326117A1

公开(公告)日：2012-12-27

申请号：US13399535

申请日：2012-02-17

Applicant: Akira TANAKA ,  Yoko MOTOJIMA

Inventor： Akira TANAKA ,  Yoko MOTOJIMA

IPC: H01L33/04 ,  H01L33/62

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/42 ,  H01L2933/0016

Abstract: According to one embodiment, in a semiconductor light emitting device, a semiconductor laminated body is made by laminating a first semiconductor layer of a first conductivity type having a first sheet resistance, a light emitting layer, and a second semiconductor layer of a second conductivity type and includes a cutout unit formed at an end side and an indentation unit extending from the cutout unit in a first direction toward the other end side and branching or bending in a second direction substantially perpendicular to the first direction as well as bending or branching in a direction opposite to the second direction. A transparent conductive film is formed on the semiconductor laminated body and has a second sheet resistance less than the first sheet resistance. A first thin wire electrode is formed along the indentation unit. A second thin wire electrode is formed on the transparent conductive film.

Abstract translation: 根据一个实施例，在半导体发光器件中，通过层压具有第一薄层电阻的第一导电类型的第一半导体层，发光层和第二导电类型的第二半导体层来制造半导体层叠体 并且包括形成在端侧的切口单元和从所述切口单元沿着第一方向朝向另一端侧延伸的凹口单元，并且在基本上垂直于所述第一方向的第二方向上分支或弯曲以及在第一方向上弯曲或分支 方向与第二方向相反。 在半导体层叠体上形成透明导电膜，并且具有小于第一薄层电阻的第二薄层电阻。 沿着压痕单元形成第一细线电极。 在透明导电膜上形成第二细线电极。

公开(公告)号：US20110133154A1

公开(公告)日：2011-06-09

申请号：US12782925

申请日：2010-05-19

Applicant: Akira Tanaka ,  Yoko Motojima

Inventor： Akira Tanaka ,  Yoko Motojima

IPC: H01L33/04 ,  H01L33/30 ,  H01L33/36

CPC classification number: H01L33/42 ,  H01L33/145

Abstract: A light emitting device includes: a laminated body including a first conductivity type layer, a light emitting layer provided on the first conductivity type layer, and a second conductivity type layer provided on the light emitting layer, the laminated body being made of InxGayAl1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1); a first electrode provided on the first conductivity type layer exposed to a bottom surface of a step difference provided in the laminated body; a translucent electrode provided on one portion of an upper face of the second conductivity type layer; and a second electrode provided on the translucent electrode and being smaller than the translucent electrode. A length of the other portion of the upper face of the second conductivity layer between an end portion of the translucent electrode and the side face of the step difference is 30 μm or more along a line connecting between a center of the first electrode and a center of the second electrode.

Abstract translation: 发光器件包括：层叠体，其包括第一导电型层，设置在第一导电类型层上的发光层和设置在发光层上的第二导电类型层，所述层叠体由In x Ga y Al 1-x -yN（0＆nlE; x＆nlE; 1,0＆nlE; y＆nlE; 1，x + y＆nlE; 1）; 第一电极，其设置在暴露于设置在层叠体中的台阶差的底面的第一导电类型层上; 设置在所述第二导电类型层的上表面的一部分上的半透明电极; 以及设置在所述透光性电极上并且比所述透光性电极小的第二电极。 另外，透光性电极的端部与台阶差的侧面之间的第二导电层的上表面的另一部分的长度沿着连接在第一电极的中心与中心之间的线为30μm以上 的第二电极。

公开(公告)号：US08686398B2

公开(公告)日：2014-04-01

申请号：US13599852

申请日：2012-08-30

Applicant: Akira Tanaka ,  Yoko Motojima

Inventor： Akira Tanaka ,  Yoko Motojima

IPC: H01L29/06

CPC classification number: H01L33/06 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.

Abstract translation: 半导体发光器件包括第一导电型第一半导体层，第二导电型第二半导体层，半导体发光层以及第一和第二电极。 半导体发光层设置在第一半导体层和第二半导体层之间，并且包括多量子阱结构。 量子阱结构包括交替层叠的阱层和势垒层，每个阱层不小于6nm且不大于10nm。 第一和第二电极电连接到第一和第二半导体层，使得电流在基本垂直于主表面的方向上流动。

公开(公告)号：US20130228742A1

公开(公告)日：2013-09-05

申请号：US13599852

申请日：2012-08-30

Applicant: Akira Tanaka ,  Yoko Motojima

Inventor： Akira Tanaka ,  Yoko Motojima

IPC: H01L33/06

CPC classification number: H01L33/06 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.

Abstract translation: 半导体发光器件包括第一导电型第一半导体层，第二导电型第二半导体层，半导体发光层以及第一和第二电极。 半导体发光层设置在第一半导体层和第二半导体层之间，并且包括多量子阱结构。 量子阱结构包括交替层叠的阱层和势垒层，每个阱层不小于6nm且不大于10nm。 第一和第二电极电连接到第一和第二半导体层，使得电流在基本垂直于主表面的方向上流动。