Organic-light-emitting-diode flat-panel light-source apparatus
    2.
    发明授权
    Organic-light-emitting-diode flat-panel light-source apparatus 有权
    有机发光二极管平板光源装置

    公开(公告)号:US08421064B2

    公开(公告)日:2013-04-16

    申请号:US13078095

    申请日:2011-04-01

    IPC分类号: H01L29/08 H01L35/24 H01L51/00

    摘要: Provided are an organic-light-emitting-diode (OLED) flat-panel light-source apparatus and a method of manufacturing the same. The device includes an anode and a cathode, to which externally applied power is supplied, disposed on a substrate, an organic emission layer (EML) interposed between the anode and the cathode and configured to emit light due to power supplied through the anode and the cathode, and a subsidiary electrode layer including a plurality of subsidiary electrodes bonded to the anode or the cathode and configured to supply power to the anode or the cathode or electrically insulated from the anode or the cathode and configured to supply power to other emission regions.

    摘要翻译: 提供一种有机发光二极管(OLED)平板光源装置及其制造方法。 该装置包括阳极和阴极,外部施加的功率被供应到其上,设置在基板上,有机发射层(EML)插入在阳极和阴极之间并且被配置为由于通过阳极提供的功率而发光, 阴极和辅助电极层,其包括结合到阳极或阴极的多个辅助电极,并且被配置为向阳极或阴极供电或者与阳极或阴极电绝缘并且被配置为向其它发射区域供电。

    Transparent smart light source capable of adjusting illumination direction
    3.
    发明授权
    Transparent smart light source capable of adjusting illumination direction 有权
    透明智能光源能够调节照明方向

    公开(公告)号:US08363301B2

    公开(公告)日:2013-01-29

    申请号:US12816858

    申请日:2010-06-16

    IPC分类号: G02F1/15

    摘要: A transparent smart light source capable of adjusting an illumination direction is provided. The transparent smart light source includes a reflectance/transmittance tunable device that adjusts an illumination direction by reflecting or transmitting light emitted from a transparent organic light-emitting diode (OLED) according to applied voltage, and thus can simply adjust the illumination direction according to purpose. Accordingly, it is possible to prevent optical loss in an unnecessary direction, and power consumption can be reduced. Furthermore, the transparent smart light source can serve as a curtain blocking out external light, as well as a lighting device, and also can be combined with a solar cell to generate electric power.

    摘要翻译: 提供能够调节照明方向的透明智能光源。 透明智能光源包括通过根据施加的电压反射或透射从透明有机发光二极管(OLED)发射的光来调节照明方向的反射/透射可调谐装置,因此可以根据目的简单地调节照明方向 。 因此,可以防止在不必要的方向上的光损失,并且可以降低功耗。 此外,透明智能光源可以用作遮挡外部光的窗帘以及照明装置,并且还可以与太阳能电池组合以产生电力。

    WHITE ORGANIC LIGHT EMITTING DEVICE
    4.
    发明申请
    WHITE ORGANIC LIGHT EMITTING DEVICE 审中-公开
    白有机发光装置

    公开(公告)号:US20120032186A1

    公开(公告)日:2012-02-09

    申请号:US13239810

    申请日:2011-09-22

    IPC分类号: H01L33/02

    CPC分类号: H01L51/5036

    摘要: Provided is a white organic light emitting device (OLED), including: a first electrode formed on a substrate; a hole transport layer formed on the first electrode; an emission layer formed on the hole transport layer; an electron transport layer formed on the emission layer; and an color control layer formed on at least one of the hole transport layer, the emission layer and the electron transport layer, and emitting green and/or red by energy transfer from the emission layer. The white OLED emits red, green and blue light with high efficiency, has excellent color reproducibility and a high color reproduction index.

    摘要翻译: 提供了一种白色有机发光器件(OLED),包括:形成在衬底上的第一电极; 形成在所述第一电极上的空穴传输层; 形成在空穴传输层上的发光层; 形成在发光层上的电子传输层; 以及形成在空穴传输层,发射层和电子传输层中的至少一个上的颜色控制层,并且通过从发射层的能量转移发射绿色和/或红色。 白色OLED以高效率发出红色,绿色和蓝色光,具有优异的色彩再现性和高色彩再现指数。

    Method and apparatus for modeling source-drain current of thin film transistor
    5.
    发明授权
    Method and apparatus for modeling source-drain current of thin film transistor 有权
    薄膜晶体管源漏电流建模方法及设备

    公开(公告)号:US08095343B2

    公开(公告)日:2012-01-10

    申请号:US12201457

    申请日:2008-08-29

    IPC分类号: G06F17/11

    CPC分类号: G06F17/5036

    摘要: Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT.

    摘要翻译: 提供了一种用于建模TFT的源极 - 漏极电流的方法和装置。 该方法包括接收样本数据,样本数据包括样本输入值和样本输出值; 根据样本数据调整建模变量; 根据调整后的建模变量计算当前模型值; 当所计算的当前模型值与样本输出值之间的差小于预定阈值时,通过将调整的建模变量应用于当前模型来拟合当前模型; 将实际输入数据应用于拟合的当前模型; 并输出与实际输入数据对应的结果值,其中当前模型是用于预测TFT的源极 - 漏极电流的模型。

    Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer
    7.
    发明授权
    Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer 有权
    使用原子层沉积制造P型ZnO半导体层的方法和包括P型ZnO半导体层的薄膜晶体管

    公开(公告)号:US07875559B2

    公开(公告)日:2011-01-25

    申请号:US11970836

    申请日:2008-01-08

    摘要: Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer.

    摘要翻译: 提供了使用包含构成薄层的元素的前体和包含p型ZnO半导体层的薄膜晶体管(TFT)之间的表面化学反应来制造透明N掺杂p型ZnO半导体层的方法。 该方法包括以下步骤:准备衬底并将衬底装载到腔室中; 将Zn前体和氧前体注入到室中,并且使用原子层沉积(ALD)技术在Zn前体和氧前体之间引起表面化学反应,以在衬底上形成ZnO薄层; 并将Zn前体和氮前体注入到室中,并且使Zn前体和氮前体之间的表面化学反应在ZnO薄层上形成掺杂层。

    No water spill automatic steam car wash system
    8.
    发明授权
    No water spill automatic steam car wash system 失效
    无溢水自动蒸汽洗车系统

    公开(公告)号:US07806128B2

    公开(公告)日:2010-10-05

    申请号:US11986631

    申请日:2007-11-26

    IPC分类号: B08B3/04

    摘要: An automatic steam car washing system is provided. The automatic steam car washing system according to current application is comprised of a moving station and 10 metal beams that comprise a frame. Car to be washed stays inside of the frame. Pluralities of steam spraying nozzles, a vacuum nozzle, and a towel are installed in a moving station and moves along the surface of the car. Pluralities of steam generators are installed inside of the moving station and connected to the steam spraying nozzles. Tip of the steam spraying nozzle oscillates horizontally with an angle to the surface of the car. The distance between the spraying nozzle and the surface of the car is maintained constant irrespective of the surface geometry. The automatic steam car washing system according to current application realize a no water spill automatic car washing system and protects the air by collecting the dusts that comes out from the contaminated car surface. By making a steam car wash system automatic, it also protects workers from contaminated working environment. No detergent is used.

    摘要翻译: 提供自动蒸汽洗车系统。 根据当前应用的自动蒸汽洗车系统包括移动台和包括框架的10个金属梁。 要洗涤的车停在车架内部。 多台蒸汽喷嘴,真空喷嘴和毛巾安装在移动台上,并沿着汽车表面移动。 多台蒸汽发生器安装在移动站内部并连接到蒸汽喷嘴上。 蒸汽喷嘴的尖端与汽车表面呈角度水平摆动。 无论表面几何形状如何,喷嘴与汽车表面之间的距离保持恒定。 根据当前的应用,自动蒸汽洗车系统实现了无泄漏自动洗车系统,通过收集污染汽车表面出来的灰尘来保护空气。 通过自动制作蒸汽洗车系统,还可以保护工作人员免受受污染的工作环境的影响。 不使用洗涤剂。

    No water spill automatic steam car wash system
    9.
    发明申请
    No water spill automatic steam car wash system 失效
    无溢水自动蒸汽洗车系统

    公开(公告)号:US20090133728A1

    公开(公告)日:2009-05-28

    申请号:US11986631

    申请日:2007-11-26

    摘要: An automatic steam car washing system is provided. The automatic steam car washing system according to current application is comprised of a moving station and 10 metal beams that comprise a frame. Car to be washed stays inside of the frame. Pluralities of steam spraying nozzles, a vacuum nozzle, and a towel are installed in a moving station and moves along the surface of the car. Pluralities of steam generators are installed inside of the moving station and connected to the steam spraying nozzles. Tip of the steam spraying nozzle oscillates horizontally with an angle to the surface of the car. The distance between the spraying nozzle and the surface of the car is maintained constant irrespective of the surface geometry. The automatic steam car washing system according to current application realize a no water spill automatic car washing system and protects the air by collecting the dusts that comes out from the contaminated car surface. By making a steam car wash system automatic, it also protects workers from contaminated working environment. No detergent is used.

    摘要翻译: 提供自动蒸汽洗车系统。 根据当前应用的自动蒸汽洗车系统包括移动台和包括框架的10个金属梁。 要洗涤的车停在车架内部。 多台蒸汽喷嘴,真空喷嘴和毛巾安装在移动台上,并沿着汽车表面移动。 多台蒸汽发生器安装在移动站内部并连接到蒸汽喷嘴上。 蒸汽喷嘴的尖端与汽车表面呈角度水平摆动。 无论表面几何形状如何,喷嘴与汽车表面之间的距离保持恒定。 根据当前的应用,自动蒸汽洗车系统实现了无泄漏自动洗车系统,通过收集污染汽车表面出来的灰尘来保护空气。 通过自动制作蒸汽洗车系统,还可以保护工作人员免受受污染的工作环境的影响。 不使用洗涤剂。

    METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER
    10.
    发明申请
    METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER 审中-公开
    用于电子器件的ZnO半导体层的制造方法和包括ZnO半导体层的薄膜晶体管

    公开(公告)号:US20080277656A1

    公开(公告)日:2008-11-13

    申请号:US11970737

    申请日:2008-01-08

    IPC分类号: H01L21/20 H01L29/786

    摘要: Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer. The method includes: (a) loading a substrate into a chamber; (b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate; (c) injecting an inert gas or N2 gas into the chamber to remove the remaining Zn precursor; (d) injecting an oxygen precursor into the chamber to cause a reaction between the oxygen precursor and the Zn precursor adsorbed on the substrate to form the ZnO semiconductor layer; (e) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen precursor; (f) repeating steps (a) through (e); (g) repeatedly processing the surface treatment of the ZnO semiconductor layer using O2 plasma or O3; (h) injecting the N2 gas or inert gas into the chamber to remove the remaining oxygen and Zn precursors; and (i) repeating steps (a) through (h) to control the thickness of the ZnO semiconductor layer. In this method, a transparent TFT is formed using a transparent substrate to enable manufacture of a transparent display device, and a flexible display device can be manufactured using a flexible substrate. Also, the crystallinity of the ZnO semiconductor layer can be increased to improve the mobility of a TFT, and the number of carriers can be controlled to reduce a leakage current. Therefore, a ZnO semiconductor having excellent characteristics can be manufactured.

    摘要翻译: 提供一种制造电子器件的ZnO半导体层的方法,其可以使用前体之间的表面化学反应来控制ZnO半导体层的晶体的尺寸和载流子的数量,以及包括 ZnO半导体层。 该方法包括:(a)将衬底装载到腔室中; (b)将Zn前体注入到室中以将Zn前体吸附在基底上; (c)将惰性气体或N 2 O 2气体注入到室中以除去剩余的Zn前体; (d)将氧前体注入到所述室中以引起所述氧前体和所述衬底上吸附的所述Zn前体之间的反应以形成所述ZnO半导体层; (e)将N 2 N 2气体或惰性气体注入到室中以除去剩余的氧前体; (f)重复步骤(a)至(e); (g)使用O 2等离子体或O 3 3重复处理ZnO半导体层的表面处理; (h)将N 2气体或惰性气体注入到室中以除去剩余的氧和Zn前体; 和(i)重复步骤(a)至(h)以控制ZnO半导体层的厚度。 在该方法中,使用透明基板形成透明TFT以能够制造透明显示装置,并且可以使用柔性基板制造柔性显示装置。 此外,可以增加ZnO半导体层的结晶度以提高TFT的迁移率,并且可以控制载流子数量以减少漏电流。 因此,可以制造具有优异特性的ZnO半导体。