公开(公告)号：US5139922A

公开(公告)日：1992-08-18

申请号：US602930

申请日：1990-10-25

申请人： Hisashi Watanabe ,  Yoshihiro Todokoro ,  Masazumi Hasegawa ,  Mitsutoshi Fukuda

发明人： Hisashi Watanabe ,  Yoshihiro Todokoro ,  Masazumi Hasegawa ,  Mitsutoshi Fukuda

IPC分类号： G03F7/09 ,  G03F7/20

CPC分类号： G03F7/7045 ,  G03F7/094 ,  Y10S430/143

摘要： A thin film of conductive high molecular compound is formed on a substrate such as Si followed by a heat treatment, and thereafter an electron beam exposure and subsequent development are made, to form pattern of the thin film of conductive high molecular compound; this method can eliminate forming of metal film to prevent the electron charge, can prevent charging of resist in electron-beam exposure or further prevent proximity effect when combined with deep ultraviolet light exposure.

摘要翻译： 在Si等基板上形成导电性高分子化合物的薄膜，进行热处理，然后进行电子束曝光和随后的显影，形成导电性高分子化合物的薄膜的图案。 该方法可以消除金属膜的形成以防止电子电荷，可以防止电子束曝光中的抗蚀剂充电，或进一步防止与深紫外光照射结合时的接近效应。

公开(公告)号：US5122387A

公开(公告)日：1992-06-16

申请号：US442981

申请日：1989-11-28

申请人： Hiroshi Takenaka ,  Yoshihiro Todokoro

发明人： Hiroshi Takenaka ,  Yoshihiro Todokoro

IPC分类号： G03F7/26 ,  G03F7/095 ,  G03F7/30 ,  G03F7/32 ,  H01L21/027 ,  H01L21/285 ,  H01L21/30 ,  H01L21/335 ,  H01L21/338

CPC分类号： H01L29/66863 ,  G03F7/095 ,  G03F7/322 ,  H01L21/0272 ,  H01L21/28587 ,  H01L29/66462

摘要： The invention relates to a developing solution of polydimethyl glutarimide containing acetone, ethyl alcohol, or propyl alcohol and, water, and alkali, and a pattern forming method using the same. According to the invention, a finer pattern than before may be formed by using PMGI resist film. At the same time, a liftoff process excellent in dimensional controllability and high in reliability than in the prior art will be realized. Besides, in the wet etching process of using the two-layer resist pattern of the invention as the mask on the GaAs substrate, since the adhesion of the lower layer resist to the substrate is superior, the recess width when etching the substrate can be stably controlled, so that a device of high performance may be obtained. Furthermore, in the process of using the PMGI resist film in the lower layer and the PMMA resist film in the upper layer, since the PMMA resist film and PMGI resist film possess mutually appropriate electron beam sensitivity and deep ultraviolet light sensitivity, mixed exposure by electron beam and deep ultraviolet light may be applied, so that a stable hybrid exposure may be effected at a high through-put.

公开(公告)号：US09006747B2

公开(公告)日：2015-04-14

申请号：US14240719

申请日：2012-08-27

申请人： Tomoaki Hatayama ,  Hidenori Koketsu ,  Yoshihiro Todokoro

发明人： Tomoaki Hatayama ,  Hidenori Koketsu ,  Yoshihiro Todokoro

IPC分类号： H01L29/15 ,  H01L21/306 ,  H01L29/04 ,  H01L29/16 ,  H01L21/3065 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L21/04 ,  H01L29/10 ,  H01L21/308

CPC分类号： H01L21/30604 ,  H01L21/0475 ,  H01L21/30617 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3083 ,  H01L29/045 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/7813

摘要： Provided are a technology that simply forms a particular crystal surface such as a {03-38} surface having high carrier mobility in trench sidewalls and a SiC semiconductor element where most of the trench sidewalls appropriate for a channel member are formed from {03-38} surfaces. A trench structure formed in a (0001) surface or an off-oriented surface of a (0001) surface with an offset angle 8° or lower of SiC is provided. The channel member is in the trench structure. At least 90% of the area of the channel member is a {03-38} surface or a surface that a {03-38} surface offset by an angle from −8° to 8° in the direction. Specifically, the trench sidewalls are finished to {03-38} surfaces by applying a thermal etching to a trench with (0001) surfaces of SiC. Thermal etching is conducted in a chlorine atmosphere above 800° C. with nitrogen gas as the carrier.

摘要翻译： 提供了简单地形成特定晶体表面的技术，例如在沟槽侧壁中具有高载流子迁移率的{03-38}表面，以及适合于沟道部件的大多数沟槽侧壁的SiC半导体元件由{03-38 }表面。 提供了形成在（0001）表面或（0001）表面的偏移角为8°或更小的SiC的表面的（0001）表面的沟槽结构。 通道构件处于沟槽结构。 通道构件的面积的至少90％是{03-38}表面或{01-38}表面在<1-100>方向偏移-8°至8°的角度的表面。 具体地说，通过对具有SiC的（0001）表面的沟槽进行热蚀刻，将沟槽侧壁完成到{03-38}表面。 用氮气作为载体，在800℃以上的氯气氛中进行热蚀刻。

公开(公告)号：US20140203300A1

公开(公告)日：2014-07-24

申请号：US14240719

申请日：2012-08-27

申请人： Tomoaki Hatayama ,  Hidenori Koketsu ,  Yoshihiro Todokoro

发明人： Tomoaki Hatayama ,  Hidenori Koketsu ,  Yoshihiro Todokoro

IPC分类号： H01L21/306 ,  H01L29/04 ,  H01L29/16 ,  H01L29/10

CPC分类号： H01L21/30604 ,  H01L21/0475 ,  H01L21/30617 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3083 ,  H01L29/045 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/7813

摘要： Provided are a technology that simply forms a particular crystal surface such as a {03-38} surface having high carrier mobility in trench sidewalls and a SiC semiconductor element where most of the trench sidewalls appropriate for a channel member are formed from {03-38} surfaces. A trench structure formed in a (0001) surface or an off-oriented surface of a (0001) surface with an offset angle 8° or lower of SiC is provided. The channel member is in the trench structure. At least 90% of the area of the channel member is a {03-38} surface or a surface that a {03-38} surface offset by an angle from −8° to 8° in the direction. Specifically, the trench sidewalls are finished to {03-38} surfaces by applying a thermal etching to a trench with (0001) surfaces of SiC. Thermal etching is conducted in a chlorine atmosphere above 800° C. with nitrogen gas as the carrier.

摘要翻译： 提供了简单地形成特定晶体表面的技术，例如在沟槽侧壁中具有高载流子迁移率的{03-38}表面，以及适合于沟道部件的大多数沟槽侧壁的SiC半导体元件由{03-38 }表面。 提供了形成在（0001）表面或（0001）表面的偏移角为8°或更小的SiC的表面的（0001）表面的沟槽结构。 通道构件处于沟槽结构。 通道构件的面积的至少90％是{03-38}表面或{01-38}表面在<1-100>方向偏移-8°至8°的角度的表面。 具体地说，通过对具有SiC的（0001）表面的沟槽进行热蚀刻，将沟槽侧壁完成到{03-38}表面。 用氮气作为载体，在800℃以上的氯气氛中进行热蚀刻。