公开(公告)号：US20120070958A1

公开(公告)日：2012-03-22

申请号：US13238715

申请日：2011-09-21

申请人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Yasuhiko Akaike ,  Shinji Nunotani ,  Wakana Nishiwaki ,  Masaaki Ogawa ,  Toru Kita ,  Hidefumi Yasuda

发明人： Kazuyoshi Furukawa ,  Yoshinori Natsume ,  Yasuhiko Akaike ,  Shinji Nunotani ,  Wakana Nishiwaki ,  Masaaki Ogawa ,  Toru Kita ,  Hidefumi Yasuda

IPC分类号： H01L21/762

CPC分类号： H01L21/185 ,  H01L21/76251 ,  H01L33/0079

摘要： In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate.

摘要翻译： 在本实施方式的半导体装置的制造方法中，在室温下，具有比第一基板的热膨胀系数小的第一基板与第二基板粘合。 然后，第一基板和第二基板被加热，第一基板在比第二基板的温度高的温度下加热。 因此，第一基板和第二基板结合在一起。 第一衬底是包括氮化物基半导体层的蓝宝石衬底或包括磷基半导体层的GaAs衬底。 第二基板是硅衬底，GaAs衬底，Ge衬底或金属衬底。

公开(公告)号：US20110042680A1

公开(公告)日：2011-02-24

申请号：US12726462

申请日：2010-03-18

申请人： Yasuhiko Akaike ,  Yoshinori Natsume ,  Masaaki Ogawa

发明人： Yasuhiko Akaike ,  Yoshinori Natsume ,  Masaaki Ogawa

IPC分类号： H01L33/30 ,  H01L33/32 ,  H01L33/44 ,  H01L21/30

CPC分类号： H01L33/145 ,  H01L33/0079 ,  H01L33/38

摘要： A light emitting device includes: a conductive substrate; a metal film provided above the conductive substrate; a light emitting layer provided above the metal film; an electrode provided partly above the light emitting layer; and a current suppression layer being in contact with the metal film, provided in a region including at least part of an immediately underlying region of the electrode, and configured to suppress current, a first portion of the metal film including at least part of a portion located between the current suppression layer and the electrode, being separated from an portion other than the first portion.

摘要翻译： 发光器件包括：导电衬底; 设置在导电性基板上的金属膜; 设置在金属膜上方的发光层; 设置在发光层的上方的电极; 以及电流抑制层，其与所述金属膜接触，设置在包括所述电极的紧下游区域的至少一部分的区域中，并且被构造成抑制电流，所述金属膜的第一部分包括至少部分部分 位于电流抑制层和电极之间，与第一部分以外的部分分离。

公开(公告)号：US09444012B2

公开(公告)日：2016-09-13

申请号：US13037990

申请日：2011-03-01

申请人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

发明人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/38 ,  H01L33/405 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer includes a metal portion, plural first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plural first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.

摘要翻译： 半导体发光器件包括结构体，第一电极层和第二电极层。 结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和第一和第二半导体层之间的发光层。 第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。 金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。 多个第一开口部各自具有不小于10纳米且不大于1微米的圆当量直径。 至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。

公开(公告)号：US20120240903A1

公开(公告)日：2012-09-27

申请号：US13424849

申请日：2012-03-20

申请人： Nobuyuki Kondo ,  Hiroshi Inaoka ,  Teruhide Yamanishi ,  Kazuo Fujihara ,  Toshinao Takigawa ,  Toshiyuki Hyodo ,  Masaaki Ogawa

发明人： Nobuyuki Kondo ,  Hiroshi Inaoka ,  Teruhide Yamanishi ,  Kazuo Fujihara ,  Toshinao Takigawa ,  Toshiyuki Hyodo ,  Masaaki Ogawa

IPC分类号： F02M33/02

CPC分类号： F02M35/10222 ,  B62J35/00 ,  B62J37/00 ,  B62K2202/00 ,  F02M25/0872 ,  F02M35/162

摘要： A charge pipe passage includes: a first engine-side pipe passage part which extends vertically; a second engine-side pipe passage part which is connected to a lower end of the first engine-side pipe passage part on one side in the vehicle widthwise direction and extends from one side to the other side in the vehicle widthwise direction above the engine body; and a third engine-side pipe passage part which is communicably connected to the second engine-side pipe passage part on the other side in the vehicle widthwise direction and is connected to the engine body, and at least a part of the charge pipe passage between a frame-side support part and an engine-side support part is formed of an elastic tube.

摘要翻译： 充气管通道包括：垂直延伸的第一发动机侧管道通道部分; 第二发动机侧管路通路部，其在车宽方向的一侧与第一发动机侧管路部的下端连接，并且沿着车宽方向从发动机主体的一侧向另一侧延伸 ; 以及第三发动机侧管道通道部分，其在车辆宽度方向上的另一侧可连接地连接到第二发动机侧管道通道部分，并且连接到发动机主体，并且至少一部分充电管通道在 框架侧支撑部和发动机侧支撑部由弹性管形成。

公开(公告)号：US20120056232A1

公开(公告)日：2012-03-08

申请号：US13037937

申请日：2011-03-01

申请人： Akira Fujimoto ,  Koji Asakawa ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

发明人： Akira Fujimoto ,  Koji Asakawa ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

IPC分类号： H01L33/38 ,  H01L33/42 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/42 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括结构体，第一电极层，中间层和第二电极层。 结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一和第二半导体层之间的发光层。 第一电极层位于与第一半导体层相对的第二半导体层的一侧上; 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部分，具有不小于10纳米且不大于5微米的等效圆直径。 中间层位于与第二半导体层欧姆接触的第一和第二半导体层之间。 第二电极层电连接到第一半导体层。

公开(公告)号：US07550792B2

公开(公告)日：2009-06-23

申请号：US11778314

申请日：2007-07-16

申请人： Masaaki Ogawa ,  Takashi Doi ,  Toshihiko Kitamura

发明人： Masaaki Ogawa ,  Takashi Doi ,  Toshihiko Kitamura

IPC分类号： H01L27/148 ,  H01L31/101

CPC分类号： H01L27/14625 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

摘要： A solid-state imaging device, includes: a substrate where a region of a first conductivity type is formed on at least a portion of a surface thereof; a region of a second conductivity type formed on at least a portion of a surface of the region of the first conductivity type; a multilayer wiring layer formed on the substrate; and a layer of the second conductivity type formed directly above the region of the second conductivity type in the multilayer wiring layer, connected to the region of the second conductivity type. A concentration of impurities in the layer of the second conductivity type is lower with decreasing proximity to the region of the second conductivity type.

摘要翻译： 固态成像装置包括：在其表面的至少一部分上形成有第一导电类型的区域的基板; 形成在所述第一导电类型的区域的表面的至少一部分上的第二导电类型的区域; 形成在所述基板上的多层布线层; 以及在所述多层布线层中直接形成在所述第二导电类型的区域上方的第二导电类型的层，连接到所述第二导电类型的区域。 第二导电类型的层中的杂质浓度随着第二导电类型的区域的接近而降低。

公开(公告)号：US20070275496A1

公开(公告)日：2007-11-29

申请号：US11751807

申请日：2007-05-22

申请人： Atsuko Yamashita ,  Toshihiko Kitamura ,  Takashi Doi ,  Masaaki Ogawa ,  Takayuki Sakai

发明人： Atsuko Yamashita ,  Toshihiko Kitamura ,  Takashi Doi ,  Masaaki Ogawa ,  Takayuki Sakai

IPC分类号： H01L21/00

CPC分类号： H01L27/14625 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

摘要： A solid-state imaging device includes: a substrate; a photo-receiving portion formed in the substrate; a wiring layer formed on the substrate and having a trench being formed on a region directly above the photo-receiving portion; and a light guiding member provided in the trench and made of organic material. An empty space is formed between a side wall of the trench and a side surface of the light guiding member. The side surface of the light guiding member is curved so that a central part of the side surface along a vertical direction is closer to a center axis of the trench than both end parts of the side surface along the vertical direction.

摘要翻译： 固态成像装置包括：基板; 形成在基板中的光接收部分; 形成在所述基板上并且具有沟槽的布线层，形成在所述光接收部分正上方的区域上; 以及设置在沟槽中并由有机材料制成的导光构件。 在沟槽的侧壁和导光构件的侧表面之间形成空的空间。 导光构件的侧表面是弯曲的，使得沿着垂直方向的侧表面的中心部分比沿着垂直方向的侧表面的两个端部更靠近沟槽的中心轴线。

公开(公告)号：US4143779A

公开(公告)日：1979-03-13

申请号：US838586

申请日：1977-10-03

申请人： Kazumitsu Hachikawa ,  Masaaki Ogawa

发明人： Kazumitsu Hachikawa ,  Masaaki Ogawa

IPC分类号： B65G59/06 ,  B65B69/00 ,  B65G47/78 ,  B65G65/40

CPC分类号： B65B69/00

摘要： Bags each containing a stack of can ends and closed at its open end by being folded are fed one by one by a conveyor, and each bag is then delivered from the conveyor into a de-bagger case in a receiving position in which the case has its opening directed upward and the folded end is thereby unfolded. The bag within the de-bagger case is then adhered to the inner wall of the case by suction. The de-bagger case is subsequently turned to a discharge position in which the opening is directed downward, permitting the can ends within the bag to be moved downward by gravity into a transfer guide for guiding the can ends to a feeding duct for a seamer. The case is provided at its bottom with a mouth for injecting a pressure fluid into the case for forcing out the remaining empty bag from the case. The case is further provided near the outlet thereof with a can end retainer for holding the can ends in position when they move out from the bag.

摘要翻译： 每个包含一堆罐头端部并且通过折叠在其开口端封闭的袋子由输送机一个接一个地供给，然后将每个袋子从输送机输送到处于壳体具有的接收位置的脱袋机壳体 其开口朝上，折叠端由此展开。 然后通过抽吸将脱袋机壳体内的袋子粘附到壳体的内壁。 脱袋机壳体随后转到排放位置，在该排放位置，开口向下指向，允许袋内的罐端部通过重力向下移动到用于将罐端引导到用于缝合器的进料管道的转移导向件中。 在其底部设置有用于将压力流体注入到壳体中的口，用于迫使剩余的空袋从壳体中排出。 在其出口附近还设置有罐端保持器，用于当罐体从袋中移出时将罐端保持在适当的位置。

公开(公告)号：US09200601B2

公开(公告)日：2015-12-01

申请号：US13424849

申请日：2012-03-20

申请人： Nobuyuki Kondo ,  Hiroshi Inaoka ,  Teruhide Yamanishi ,  Kazuo Fujihara ,  Toshinao Takigawa ,  Toshiyuki Hyodo ,  Masaaki Ogawa

发明人： Nobuyuki Kondo ,  Hiroshi Inaoka ,  Teruhide Yamanishi ,  Kazuo Fujihara ,  Toshinao Takigawa ,  Toshiyuki Hyodo ,  Masaaki Ogawa

IPC分类号： B62M7/00 ,  F02M35/10 ,  B62J35/00 ,  B62J37/00 ,  F02M25/08 ,  F02M35/16

CPC分类号： F02M35/10222 ,  B62J35/00 ,  B62J37/00 ,  B62K2202/00 ,  F02M25/0872 ,  F02M35/162

摘要： A charge pipe passage includes: a first engine-side pipe passage part which extends vertically; a second engine-side pipe passage part which is connected to a lower end of the first engine-side pipe passage part on one side in the vehicle widthwise direction and extends from one side to the other side in the vehicle widthwise direction above the engine body; and a third engine-side pipe passage part which is communicably connected to the second engine-side pipe passage part on the other side in the vehicle widthwise direction and is connected to the engine body, and at least a part of the charge pipe passage between a frame-side support part and an engine-side support part is formed of an elastic tube.

摘要翻译： 充气管通道包括：垂直延伸的第一发动机侧管道通道部分; 第二发动机侧管路通路部，其在车宽方向的一侧与第一发动机侧管路部的下端连接，并且沿着车宽方向从发动机主体的一侧向另一侧延伸 ; 以及第三发动机侧管道通道部分，其在车辆宽度方向上的另一侧可连接地连接到第二发动机侧管道通道部分，并且连接到发动机主体，并且至少一部分充电管通道在 框架侧支撑部和发动机侧支撑部由弹性管形成。

公开(公告)号：US08680561B2

公开(公告)日：2014-03-25

申请号：US13037914

申请日：2011-03-01

申请人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Eishi Tsutsumi ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

发明人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Eishi Tsutsumi ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.

摘要翻译： 一种半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第一电极层和第二电极层。 发光层位于第一半导体层和第二半导体层之间。 第一电极层位于与第一半导体层相对的第二半导体层的一侧。 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部。 金属部分接触第二半导体层。 沿着该方向观察的开口部分的构造的等效圆直径不小于10纳米且不大于5微米。