摘要:
The invention provides a printed circuit board capable of preventing an electronic component from tilting or uplifting without adopting special structures in an existing electronic component. The printed circuit board has an engagement portion and terminal holes and for mounting an electronic component, comprising narrowed portions and having substantially the same width as the mounting leg portions and connecting terminals of the electronic component, and guidance portions having a width wider than the narrowed portion, wherein the mounting leg portions and connecting terminals are inserted to the guidance portion, and the electronic component is moved via sliding motion, by which the mounting leg portions and the connecting terminals are supported tightly in the narrowed portion. Thus, it becomes possible to prevent the displacement or tilt of the electronic component.
摘要:
A printed circuit board having circuit patterns printed thereon has a plurality of composite lands each including a first land having a terminal hole formed at its center for inserting the terminal of a selected electric or electronic part or device, and a plurality of second lands each being contiguous to and extending outwards from the first land. The areas contiguous to the contours of the first and second lands have no conductive foils, such as copper foils, thereon such that the substrate surface of the printed circuit board is exposed in these areas. The exposed areas are effective to confine the thermal energy in the limited areas for soldering. And the composite land shape defines a ridged cone-like solder lump, which can fixedly grip the terminal of the part or device.
摘要:
The present invention provides a thin film transistor including an oxide semiconductor layer (4) for electrically connecting a signal electrode (6a) and a drain electrode (7a), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer (6b) made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer (6b) being in touch with the signal electrode (6a) and the oxide semiconductor layer (4) and separating the signal electrode (6a) from the oxide semiconductor layer (4). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.
摘要:
The present invention provides a thin film transistor including an oxide semiconductor layer (4) for electrically connecting a signal electrode (6a) and a drain electrode (7a), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer (6b) made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer (6b) being in touch with the signal electrode (6a) and the oxide semiconductor layer (4) and separating the signal electrode (6a) from the oxide semiconductor layer (4). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.