-
1.发明申请POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS 有权聚合物，光电组合物和形成光刻图案的方法公开(公告)号：US20120171617A1
公开(公告)日：2012-07-05
申请号：US13341935
申请日：2011-12-31
申请人： Young Cheol BAE , Thomas H. Peterson , Yi Liu , Jong Keun Park , Seung-Hyun Lee , Thomas Cardolaccia
发明人： Young Cheol BAE , Thomas H. Peterson , Yi Liu , Jong Keun Park , Seung-Hyun Lee , Thomas Cardolaccia
IPC分类号： G03F7/20 , G03F7/004 , C08F224/00
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/11 , G03F7/2041 , G03F7/322 , G03F7/325
摘要： Provided are polymers that include a unit comprising a particular acetal moiety and a unit comprising a lactone moiety. Also provided are photoresist compositions containing such a polymer, substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 提供的是包括包含特定缩醛部分的单元和包含内酯部分的单元的聚合物。 还提供含有这种聚合物的光致抗蚀剂组合物，用光致抗蚀剂组合物涂覆的基材和形成光刻图案的方法。 聚合物，组合物，方法和涂覆的基底在半导体器件的制造中具有特别的适用性。
-
2.发明授权Polymers, photoresist compositions and methods of forming photolithographic patterns 有权聚合物，光致抗蚀剂组合物和形成光刻图案的方法公开(公告)号：US08614050B2
公开(公告)日：2013-12-24
申请号：US13341935
申请日：2011-12-31
申请人： Young Cheol Bae , Thomas H. Peterson , Yi Liu , Jong Keun Park , Seung-Hyun Lee , Thomas Cardolaccia
发明人： Young Cheol Bae , Thomas H. Peterson , Yi Liu , Jong Keun Park , Seung-Hyun Lee , Thomas Cardolaccia
IPC分类号： G03F7/00 , C08F224/00 , C08F220/26
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/11 , G03F7/2041 , G03F7/322 , G03F7/325
摘要： Polymers include a unit comprising a particular acetal moiety and a unit comprising a lactone moiety, photoresist compositions containing such a polymer, substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 聚合物包括包含特定缩醛部分的单元和包含内酯部分的单元，含有这种聚合物的光致抗蚀剂组合物，涂有光致抗蚀剂组合物的基材和形成光刻图案的方法。 聚合物，组合物，方法和涂覆的基底在半导体器件的制造中具有特别的适用性。
-
3.发明申请公开(公告)号：US20120219902A1
公开(公告)日：2012-08-30
申请号：US13407529
申请日：2012-02-28
申请人： Young Cheol Bae , Jong Keun Park , Seung-Hyun Lee , Yi Liu , Thomas Cardolaccia , Rosemary Bell
发明人： Young Cheol Bae , Jong Keun Park , Seung-Hyun Lee , Yi Liu , Thomas Cardolaccia , Rosemary Bell
CPC分类号： G03F7/2041 , G03F7/0397 , G03F7/091 , G03F7/11 , G03F7/325
摘要： Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 提供了可用于形成光刻图案的光致抗蚀剂组合物。 还提供了涂覆有光致抗蚀剂组合物的基材和形成光刻图案的方法。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
-
4.发明授权公开(公告)号：US08975001B2
公开(公告)日：2015-03-10
申请号：US13407508
申请日：2012-02-28
申请人： Young Cheol Bae , Rosemary Bell , Thomas Cardolaccia , Seung-Hyun Lee , Yi Liu , Jong Keun Park
发明人： Young Cheol Bae , Rosemary Bell , Thomas Cardolaccia , Seung-Hyun Lee , Yi Liu , Jong Keun Park
CPC分类号： G03F7/0397 , G03F7/091 , G03F7/2041 , G03F7/325
摘要： Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 提供了可用于形成光刻图案的光致抗蚀剂组合物。 还提供了涂覆有光致抗蚀剂组合物的基材和形成光刻图案的方法。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
-
5.发明授权Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns 有权单体，聚合物，光致抗蚀剂组合物和形成光刻图案的方法公开(公告)号：US08771917B2
公开(公告)日：2014-07-08
申请号：US13341931
申请日：2011-12-31
申请人： Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
发明人： Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
CPC分类号： G03F7/0397 , C07D307/93 , C07D317/24 , C08F24/00 , C08F220/28 , G03F7/0382 , G06F7/38 , Y10S430/111
摘要： Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 提供含有缩醛部分的（甲基）丙烯酸酯单体，含有由这种单体形成的单元的聚合物和含有这种聚合物的光致抗蚀剂组合物。 单体，聚合物和光致抗蚀剂组合物可用于形成光刻图案。 还提供了涂覆有光致抗蚀剂组合物的基材，形成光刻图案的方法和电子装置。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
-
6.发明申请MONOMERS, POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS 有权单体，聚合物，光电组合物和形成光刻图案的方法公开(公告)号：US20130011783A1
公开(公告)日：2013-01-10
申请号：US13341931
申请日：2011-12-31
申请人： Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
发明人： Matthias S. Ober , Young Cheol Bae , Yi Liu , Seung-Hyun Lee , Jong Keun Park
IPC分类号： C08F224/00 , C07D407/06 , G03F7/20 , C08F124/00 , G03F7/004
CPC分类号： G03F7/0397 , C07D307/93 , C07D317/24 , C08F24/00 , C08F220/28 , G03F7/0382 , G06F7/38 , Y10S430/111
摘要： Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 提供含有缩醛部分的（甲基）丙烯酸酯单体，含有由这种单体形成的单元的聚合物和含有这种聚合物的光致抗蚀剂组合物。 单体，聚合物和光致抗蚀剂组合物可用于形成光刻图案。 还提供了涂覆有光致抗蚀剂组合物的基材，形成光刻图案的方法和电子装置。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
-
7.发明授权Polymers, photoresist compositions and methods of forming photolithographic patterns 有权聚合物，光致抗蚀剂组合物和形成光刻图案的方法公开(公告)号：US09298093B2
公开(公告)日：2016-03-29
申请号：US13341939
申请日：2011-12-31
申请人： Young Cheol Bae , Matthew M. Meyer , Jibin Sun , Seung-Hyun Lee , Jong Keun Park
发明人： Young Cheol Bae , Matthew M. Meyer , Jibin Sun , Seung-Hyun Lee , Jong Keun Park
CPC分类号： G03F7/2041 , C08F220/28 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/325
摘要： Polymers containing a unit having a particular acetal moiety and photoresist compositions containing such a polymer. Substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, photoresist compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 含有具有特定缩醛部分的单元的聚合物和含有这种聚合物的光致抗蚀剂组合物。 用光致抗蚀剂组合物涂覆的基材和形成光刻图案的方法。 聚合物，光致抗蚀剂组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
-
8.发明授权公开(公告)号：US08921031B2
公开(公告)日：2014-12-30
申请号：US13607733
申请日：2012-09-09
申请人： Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
发明人： Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
CPC分类号： C09D133/16 , C08K5/17 , C08K5/3415 , C08K5/3435 , C09D133/10 , G03F7/004 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/30 , G03F7/325 , H01L21/3081 , Y10S430/114 , Y10S430/12
摘要： Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 提供光刻胶外涂层组合物，涂覆有外涂层组合物的基材和通过负色调显影方法形成电子器件的方法。 组合物，涂覆的基底和方法在半导体器件的制造中特别适用。
-
9.发明申请POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS 有权聚合物，光电组合物和形成光刻图案的方法公开(公告)号：US20120288794A1
公开(公告)日：2012-11-15
申请号：US13341939
申请日：2011-12-31
申请人： Young Cheol BAE , Matthew M. Meyer , Jibin Sun , Seung-Hyun Lee , Jong Keun Park
发明人： Young Cheol BAE , Matthew M. Meyer , Jibin Sun , Seung-Hyun Lee , Jong Keun Park
IPC分类号： C08F224/00 , G03F7/20 , G03F7/004
CPC分类号： G03F7/2041 , C08F220/28 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/325
摘要： Provided are polymers containing a unit having a particular acetal moiety and photoresist compositions containing such a polymer. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, photoresist compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 提供的是含有具有特定缩醛部分的单元和含有这种聚合物的光致抗蚀剂组合物的聚合物。 还提供了涂覆有光致抗蚀剂组合物的基材和形成光刻图案的方法。 聚合物，光致抗蚀剂组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
-
公开(公告)号：US20130244180A1
公开(公告)日：2013-09-19
申请号：US13607733
申请日：2012-09-09
申请人： Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
发明人： Young Cheol Bae , Rosemary Bell , Jong Keun Park , Seung-Hyun Lee
CPC分类号： C09D133/16 , C08K5/17 , C08K5/3415 , C08K5/3435 , C09D133/10 , G03F7/004 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/30 , G03F7/325 , H01L21/3081 , Y10S430/114 , Y10S430/12
摘要： Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.029 秒)
