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8 条记录 (耗时 0.017 秒)

    REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    REFLECTIVE EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME 有权
    反射极限超紫外线掩模及其制造方法

    公开(公告)号：US20120237860A1

    公开(公告)日：2012-09-20

    申请号：US13422206

    申请日：2012-03-16

    申请人： Hoon KIM ,  Young-Su Sung ,  Young-Kuen Kim ,  Dong-Seok Nam

    发明人： Hoon KIM ,  Young-Su Sung ,  Young-Kuen Kim ,  Dong-Seok Nam

    IPC分类号： G03F1/24

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00

    摘要： A reflective EUV mask and a method of manufacturing the same, the reflective EUV mask including a mask substrate having an exposing region and a peripheral region, the mask substrate including a light scattering crystalline portion that scatters light incident to the peripheral region and that decreases reflectivity of the peripheral region; a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening that exposes the crystalline portion; and an absorbing layer pattern on an upper surface of the reflective layer, the absorbing layer pattern having a second opening in fluidic communication with the first opening.

    摘要翻译： 反射型EUV掩模及其制造方法，所述反射型EUV掩模包括具有曝光区域和外围区域的掩模基板，所述掩模基板包括散射入射到所述周边区域的光并且降低反射率的光散射结晶部分 的周边地区; 在所述掩模基板的上表面上的反射层，所述反射层具有暴露所述结晶部分的第一开口; 以及在所述反射层的上表面上的吸收层图案，所述吸收层图案具有与所述第一开口流体连通的第二开口。

    Method for Inspecting Critical Dimension Uniformity at High Speed Measurement
    2.
    发明申请
    Method for Inspecting Critical Dimension Uniformity at High Speed Measurement 有权
    检测高速测量中临界尺寸均匀性的方法

    公开(公告)号：US20100111427A1

    公开(公告)日：2010-05-06

    申请号：US12607238

    申请日：2009-10-28

    申请人： Hee-Bom Kim ,  Myoung-Soo Lee ,  Young-Su Sung

    发明人： Hee-Bom Kim ,  Myoung-Soo Lee ,  Young-Su Sung

    IPC分类号： G06K9/68

    CPC分类号： G06T7/0006 ,  G03F1/86 ,  G03F7/70625 ,  G06T2207/30148

    摘要： A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.

    摘要翻译： 用于检查光掩模图案的CD（CD）的均匀性的方法提高了产量。 该方法通过使用电子显微镜精确测量光掩模来获得CD。 然后，通过光学显微镜高速拍摄光掩模，获得具有形成在光掩模中的多个图案的测量图像。 当测量图像的开放密度相对较低时，通过仅捕获测量图像中的图案区域来计算基于CD的灰度级，并且获得估计值和相关系数。 因此，对于具有较低开放密度的测量图像的高速测量，可以更清楚地确认CD的均匀性。

    Method for inspecting critical dimension uniformity at high speed measurement
    3.
    发明授权
    Method for inspecting critical dimension uniformity at high speed measurement 有权
    在高速测量时检查临界尺寸均匀度的方法

    公开(公告)号：US08213722B2

    公开(公告)日：2012-07-03

    申请号：US12607238

    申请日：2009-10-28

    申请人： Hee-Bom Kim ,  Myoung-Soo Lee ,  Young-Su Sung

    发明人： Hee-Bom Kim ,  Myoung-Soo Lee ,  Young-Su Sung

    IPC分类号： G06K9/68

    CPC分类号： G06T7/0006 ,  G03F1/86 ,  G03F7/70625 ,  G06T2207/30148

    摘要： A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.

    摘要翻译： 用于检查光掩模图案的CD（CD）的均匀性的方法提高了产量。 该方法通过使用电子显微镜精确测量光掩模来获得CD。 然后，通过光学显微镜以高速拍摄光掩模，获得具有形成在光掩模中的多个图案的测量图像。 当测量图像的开放密度相对较低时，通过仅捕获测量图像中的图案区域来计算基于CD的灰度级，并且获得估计值和相关系数。 因此，对于具有较低开放密度的测量图像的高速测量，可以更清楚地确认CD的均匀性。

    PHOTOMASK
    5.
    发明申请
    PHOTOMASK 失效
    照片

    公开(公告)号：US20100173230A1

    公开(公告)日：2010-07-08

    申请号：US12639155

    申请日：2009-12-16

    申请人： Myoung-soo Lee ,  Young-su Sung ,  Sang-gyun Woo

    发明人： Myoung-soo Lee ,  Young-su Sung ,  Sang-gyun Woo

    IPC分类号： G03F1/00

    CPC分类号： G03F1/72 ,  G03F1/60

    摘要： A photomask or equivalent optical component includes a scattering element in the medium of a substrate, which actively modifies (adjusts/filters the intensity, shape, and/or components of) light that propagates through the substrate. The substrate has a front surface and a back surface and is transparent to exposure light of a photolithography process, i.e., light of given wavelength, at least one mask pattern at the front surface of the substrate and the image of which is to be transferred to an electronic device substrate in a photolithographic process using the photomask, a blind pattern at the front surface of the substrate and opaque to the exposure light, and the scattering element. The scattering element, in addition to being formed in the medium of the substrate, is situated below the blind pattern as juxtaposed with the blind pattern in the direction of the thickness of the substrate. Also, a section of the photomask substrate is irradiated with energy which does not melt and/or vaporize the medium of the photomask substrate to form the scattering element. To this end, a femtosecond laser may be used.

    摘要翻译： 光掩模或等效光学部件包括在衬底的介质中的散射元件，其主动地修改（调节/滤除通过衬底传播的）光的强度，形状和/或分量）。 衬底具有前表面和后表面，并且对于光刻工艺的曝光（即，给定波长的光），在衬底的前表面处的至少一个掩模图案和其图像将被转印到 使用光掩模的光刻工艺中的电子器件衬底，在衬底的前表面处的盲图案和曝光光不透明的散射元件。 除了形成在基板的介质中之外，散射元件位于盲模式的下方，与基板的厚度方向上的盲模式并列。 另外，光掩模基板的一部分被不会熔化和/或蒸发光掩模基板的介质以形成散射元件的能量照射。 为此，可以使用飞秒激光。

    Reflective extreme ultraviolet mask and method of manufacturing the same
    7.
    发明授权
    Reflective extreme ultraviolet mask and method of manufacturing the same 有权
    反射极紫外线掩膜及其制造方法

    公开(公告)号：US08568944B2

    公开(公告)日：2013-10-29

    申请号：US13422206

    申请日：2012-03-16

    申请人： Hoon Kim ,  Young-Su Sung ,  Young-Kuen Kim ,  Dong-Seok Nam

    发明人： Hoon Kim ,  Young-Su Sung ,  Young-Kuen Kim ,  Dong-Seok Nam

    IPC分类号： G03F1/22 ,  G03F1/24

    CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00

    摘要： A reflective EUV mask and a method of manufacturing the same, the reflective EUV mask including a mask substrate having an exposing region and a peripheral region, the mask substrate including a light scattering crystalline portion that scatters light incident to the peripheral region and that decreases reflectivity of the peripheral region; a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening that exposes the crystalline portion; and an absorbing layer pattern on an upper surface of the reflective layer, the absorbing layer pattern having a second opening in fluidic communication with the first opening.

    摘要翻译： 反射型EUV掩模及其制造方法，所述反射型EUV掩模包括具有曝光区域和外围区域的掩模基板，所述掩模基板包括散射入射到所述周边区域的光并且降低反射率的光散射结晶部分 的周边地区; 在所述掩模基板的上表面上的反射层，所述反射层具有暴露所述结晶部分的第一开口; 以及在所述反射层的上表面上的吸收层图案，所述吸收层图案具有与所述第一开口流体连通的第二开口。

    Photomask
    8.
    发明授权
    Photomask 失效
    光掩模

    公开(公告)号：US08007963B2

    公开(公告)日：2011-08-30

    申请号：US12639155

    申请日：2009-12-16

    申请人： Myoung-soo Lee ,  Young-su Sung ,  Sang-gyun Woo

    发明人： Myoung-soo Lee ,  Young-su Sung ,  Sang-gyun Woo

    IPC分类号： G03F1/00

    CPC分类号： G03F1/72 ,  G03F1/60

    摘要： A photomask or equivalent optical component includes a scattering element in the medium of a substrate, which actively modifies (adjusts/filters the intensity, shape, and/or components of) light that propagates through the substrate. The substrate has a front surface and a back surface and is transparent to exposure light of a photolithography process, i.e., light of given wavelength, at least one mask pattern at the front surface of the substrate and the image of which is to be transferred to an electronic device substrate in a photolithographic process using the photomask, a blind pattern at the front surface of the substrate and opaque to the exposure light, and the scattering element. The scattering element, in addition to being formed in the medium of the substrate, is situated below the blind pattern as juxtaposed with the blind pattern in the direction of the thickness of the substrate. Also, a section of the photomask substrate is irradiated with energy which does not melt and/or vaporize the medium of the photomask substrate to form the scattering element. To this end, a femtosecond laser may be used.

    摘要翻译： 光掩模或等效光学部件包括在衬底的介质中的散射元件，其主动地修改（调节/滤除通过衬底传播的）光的强度，形状和/或分量）。 衬底具有前表面和后表面，并且对于光刻工艺的曝光（即，给定波长的光），在衬底的前表面处的至少一个掩模图案和其图像将被转印到 使用光掩模的光刻工艺中的电子器件衬底，在衬底的前表面处的盲图案和曝光光不透明的散射元件。 除了形成在基板的介质中之外，散射元件位于盲模式的下方，与基板的厚度方向上的盲模式并列。 另外，光掩模基板的一部分被不会熔化和/或蒸发光掩模基板的介质以形成散射元件的能量照射。 为此，可以使用飞秒激光。