公开(公告)号：US20160056331A1

公开(公告)日：2016-02-25

申请号：US14833832

申请日：2015-08-24

申请人： Jung Sub KIM ,  Yeon Woo SEO ,  Dong Gun LEE ,  Byung Kyu CHUNG ,  Dae Myung CHUN ,  Soo Jeong CHOI

发明人： Jung Sub KIM ,  Yeon Woo SEO ,  Dong Gun LEE ,  Byung Kyu CHUNG ,  Dae Myung CHUN ,  Soo Jeong CHOI

IPC分类号： H01L33/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/08

CPC分类号： H01L33/007 ,  B82Y20/00 ,  F21K9/232 ,  F21Y2115/10 ,  H01L33/06 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/52 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

摘要： A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.

公开(公告)号：US20150168822A1

公开(公告)日：2015-06-18

申请号：US14630825

申请日：2015-02-25

申请人： Tae-Geun KIM ,  Dong-Wan KIM ,  Dong-Gun LEE ,  Seong-Sue KIM

发明人： Tae-Geun KIM ,  Dong-Wan KIM ,  Dong-Gun LEE ,  Seong-Sue KIM

IPC分类号： G03F1/24 ,  G03F1/80

CPC分类号： G03F1/24 ,  G03F1/38 ,  G03F1/80

摘要： A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.

摘要翻译： 反射性极紫外线掩模包括具有曝光区域和周边区域的掩模基板，所述掩模基板在所述周边区域中包括光散射部分，所述掩模基板的上表面上的反射层，所述反射层具有第一 打开曝光光散射部分和在反射层上的吸收层图案，吸收层图案具有与第一开口光连通的第二开口。

公开(公告)号：US20130285013A1

公开(公告)日：2013-10-31

申请号：US13880706

申请日：2011-10-26

申请人： Sung-Jin An ,  Dong-Gun Lee ,  Seok-Han Kim

发明人： Sung-Jin An ,  Dong-Gun Lee ,  Seok-Han Kim

IPC分类号： H01L33/02 ,  H01L21/02 ,  H01L29/06

CPC分类号： H01L33/02 ,  B82Y40/00 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/38 ,  H01L29/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32 ,  Y10S977/734

摘要： Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.

摘要翻译： 提供一种化合物半导体器件及其制造方法。 衬底和石墨烯氧化物层设置在衬底上。 在石墨烯氧化物层上设置第一化合物半导体层。 从由石墨烯氧化物曝光的基板选择性地生长第一化合物半导体层。

公开(公告)号：US20120267982A1

公开(公告)日：2012-10-25

申请号：US12518613

申请日：2007-12-21

申请人： Gregory P. Carman ,  Dong Gun Lee

发明人： Gregory P. Carman ,  Dong Gun Lee

IPC分类号： H01L41/113

CPC分类号： H02N2/186 ,  H01L41/1136

摘要： An energy harvesting apparatus includes an inverse frequency rectifier structured to receive mechanical energy at a first frequency, and a solid state electromechanical transducer coupled to the inverse frequency rectifier to receive a force provided by the inverse frequency rectifier. The force, when provided by the inverse frequency rectifier, causes the solid state transducer to be subjected to a second frequency that is higher than the first frequency to thereby generate electrical power. The coupling of the solid state electromechanical transducer to the inverse frequency rectifier is a non-contact coupling.

摘要翻译： 能量收集装置包括被构造成以第一频率接收机械能的反频整流器，以及耦合到逆频整流器以接收由逆频整流器提供的力的固态机电换能器。 当由逆频整流器提供时，该力使固态传感器经受高于第一频率的第二频率，从而产生电力。 固态机电换能器与逆频整流器的耦合是非接触耦合。

公开(公告)号：US20120127444A1

公开(公告)日：2012-05-24

申请号：US13221286

申请日：2011-08-30

申请人： Sung-min Huh ,  Dong-gun Lee ,  In-yong Kang

发明人： Sung-min Huh ,  Dong-gun Lee ,  In-yong Kang

IPC分类号： G03B27/70 ,  G03F1/00

CPC分类号： G03F1/24 ,  G03F1/42 ,  G03F9/7011 ,  G03F9/7088

摘要： Example embodiments of the inventive concepts relate to a reflection mask including an upper surface configured to reflect extreme ultraviolet EUV light, a lower surface opposite the upper surface, where the lower surface includes at least one alignment key. The reflection mask may include a conductive layer, a substrate on the conductive layer, a reflection layer on the substrate, and an absorption pattern on the reflection layer. The reflection layer may define the upper surface configured to reflect extreme ultraviolet EUV light. The absorption pattern may expose the upper surface of the reflection layer.

摘要翻译： 本发明构思的示例实施例涉及一种反射掩模，其包括被配置为反射极紫外EUV光的上表面，与上表面相对的下表面，其中下表面包括至少一个对准键。 反射掩模可以包括导电层，导电层上的衬底，衬底上的反射层和反射层上的吸收图案。 反射层可以限定被配置为反射极紫外EUV光的上表面。 吸收图案可以暴露反射层的上表面。

公开(公告)号：US08138483B2

公开(公告)日：2012-03-20

申请号：US12489600

申请日：2009-06-23

申请人： Dong-Gun Lee ,  Seong-Sue Kim

发明人： Dong-Gun Lee ,  Seong-Sue Kim

IPC分类号： G01J1/42

CPC分类号： G01J9/02 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/84

摘要： In a method of measuring a phase of a phase shift mask, initial extreme ultraviolet (EUV) light is divided into secondary EUV light portions. The secondary EUV light portions are irradiated onto the phase shift mask as incident EUV light portions, and the phase of the phase shift mask is measured from reflected incident EUV light portions.

摘要翻译： 在测量相移掩模的相位的方法中，初始极紫外（EUV）光被分成次级EUV光部分。 次级EUV光部分作为入射EUV光部分照射到相移掩模上，并且从反射入射的EUV光部分测量相移掩模的相位。

公开(公告)号：US07800278B2

公开(公告)日：2010-09-21

申请号：US12162082

申请日：2007-01-24

申请人： Motoki Ujihara ,  Dong Gun Lee ,  Gregory P. Carman

发明人： Motoki Ujihara ,  Dong Gun Lee ,  Gregory P. Carman

IPC分类号： H02N10/00 ,  H02N1/00

CPC分类号： H02K35/06 ,  F03G7/065 ,  H01L41/1134 ,  H01L41/1136 ,  H02N2/18 ,  H02N3/00

摘要： An inventive energy harvesting apparatus may include a ferromagnetic material and/or a shape memory alloys to convert thermal energy to mechanical energy to electrical energy. The apparatus is subjected to a thermal gradient to cause beams to bend thus creating stress/strain in a piezoelectric material, or creating magnetic flux in a magnetic path. The charges created in this process can be transferred to electrical batteries.

摘要翻译： 本发明的能量收集装置可以包括将热能转换为机械能到电能的铁磁材料和/或形状记忆合金。 该装置经受热梯度以使光束弯曲，从而在压电材料中产生应力/应变，或在磁路中产生磁通量。 在此过程中产生的费用可以转移到电池中。

公开(公告)号：US20100216062A1

公开(公告)日：2010-08-26

申请号：US12656668

申请日：2010-02-12

申请人： Dong-Gun Lee ,  Seong-Sue Kim ,  Hwan-Seok Seo ,  In-Sung Kim

发明人： Dong-Gun Lee ,  Seong-Sue Kim ,  Hwan-Seok Seo ,  In-Sung Kim

IPC分类号： G03F1/00 ,  G03F7/20

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/26

摘要： A reflective photomask includes a phase shift object on a substrate, a reflective layer stacked on the substrate and the phase shift object, a capping layer on the reflective layer, the capping layer including at least one surface portion having a bent shape, and a light absorption pattern on the capping layer, the light absorption pattern including at least one slit exposing the surface portion of the capping layer having the bent shape.

摘要翻译： 反射光掩模包括在基板上的相移物体，层叠在基板上的反射层和相移物体，反射层上的覆盖层，封盖层包括至少一个具有弯曲形状的表面部分，以及光 吸收图案包括使具有弯曲形状的覆盖层的表面部分露出的至少一个狭缝。

公开(公告)号：US20090315335A1

公开(公告)日：2009-12-24

申请号：US12162082

申请日：2007-01-24

申请人： Motoki Ujihara ,  Dong-Gun Lee ,  Gregory P. Carman

发明人： Motoki Ujihara ,  Dong-Gun Lee ,  Gregory P. Carman

IPC分类号： H02K7/18 ,  F03G7/06

CPC分类号： H02K35/06 ,  F03G7/065 ,  H01L41/1134 ,  H01L41/1136 ,  H02N2/18 ,  H02N3/00

摘要： An inventive energy harvesting apparatus may include a ferromagnetic material and/or a shape memory alloys to convert thermal energy to mechanical energy to electrical energy. The apparatus is subjected to a thermal gradient to cause beams to bend thus creating stress/strain in a piezoelectric material, or creating magnetic flux in a magnetic path. The charges created in this process can be transferred to electrical batteries.

摘要翻译： 本发明的能量收集装置可以包括将热能转换为机械能到电能的铁磁材料和/或形状记忆合金。 该装置经受热梯度以使光束弯曲，从而在压电材料中产生应力/应变，或在磁路中产生磁通量。 在此过程中产生的费用可以转移到电池中。

公开(公告)号：US20070253935A1

公开(公告)日：2007-11-01

申请号：US11622158

申请日：2007-01-11

申请人： Moon-Hee Sung ,  Seung-Pyo Hong ,  Jong-Su Lee ,  Chang-Min Jung ,  Kyung-Soo Hahim ,  Dong-Gun Lee ,  Yoon Park ,  Chul-Joong Kim ,  Ha-Ryoung Poo

发明人： Moon-Hee Sung ,  Seung-Pyo Hong ,  Jong-Su Lee ,  Chang-Min Jung ,  Kyung-Soo Hahim ,  Dong-Gun Lee ,  Yoon Park ,  Chul-Joong Kim ,  Ha-Ryoung Poo

IPC分类号： A61K39/00 ,  C12N1/21 ,  C12N15/00

CPC分类号： C07K14/32

摘要： The present invention relates to a method for expressing each of peptide antibiotics P5 3 and Anal3 35 having amphiphilicity and showing antibacterial, antifungal and anticancer activities 61, 63, 65, 67, 69, 71, on the microbial surface, using a vector containing outer membrane protein genes (pgsBCA) that are derived from Bacillus sp. strains and involved in the synthesis of poly-gamma-glutamate. Moreover, the present invention relates to lactic acid-forming bacteria having each of the peptide antibiotics P5 15 and Anal3 43 expressed on their surface, and the use thereof. According to the present invention, the peptide antibiotics can be expressed on the surface of various microorganisms transformed with the surface expression vectors. The inventive method for the surface expression of the peptide antibiotics allows the peptide antibiotics to be mass-produced without a purification process. Thus, the inventive method has very high industrial applicability. Further, the present invention can be applied to other peptide antibiotics besides P5 3 and Anal3 35.

摘要翻译： 本发明涉及使用载体表达在微生物表面上表现出具有两亲性的肽抗生素P 5 3和Anal 3 35的各种抗细菌，抗真菌和抗癌活性61,63,65,67,69,71的方法， 含有源自芽孢杆菌属的外膜蛋白基因（pgsBCA）。 菌株并参与了聚-γ-谷氨酸的合成。 此外，本发明涉及具有表面表达的肽抗生素P515和Anal343各自的乳酸形成细菌及其用途。 根据本发明，肽抗生素可以在用表面表达载体转化的各种微生物的表面上表达。 肽抗生素表面表达的本发明方法允许肽抗生素在没有纯化过程的情况下批量生产。 因此，本发明的方法具有非常高的工业实用性。 此外，除了P 5 3和Anal 3 35之外，本发明可以应用于其他肽抗生素。