公开(公告)号：US20100173230A1

公开(公告)日：2010-07-08

申请号：US12639155

申请日：2009-12-16

申请人： Myoung-soo Lee ,  Young-su Sung ,  Sang-gyun Woo

发明人： Myoung-soo Lee ,  Young-su Sung ,  Sang-gyun Woo

IPC分类号： G03F1/00

CPC分类号： G03F1/72 ,  G03F1/60

摘要： A photomask or equivalent optical component includes a scattering element in the medium of a substrate, which actively modifies (adjusts/filters the intensity, shape, and/or components of) light that propagates through the substrate. The substrate has a front surface and a back surface and is transparent to exposure light of a photolithography process, i.e., light of given wavelength, at least one mask pattern at the front surface of the substrate and the image of which is to be transferred to an electronic device substrate in a photolithographic process using the photomask, a blind pattern at the front surface of the substrate and opaque to the exposure light, and the scattering element. The scattering element, in addition to being formed in the medium of the substrate, is situated below the blind pattern as juxtaposed with the blind pattern in the direction of the thickness of the substrate. Also, a section of the photomask substrate is irradiated with energy which does not melt and/or vaporize the medium of the photomask substrate to form the scattering element. To this end, a femtosecond laser may be used.

摘要翻译： 光掩模或等效光学部件包括在衬底的介质中的散射元件，其主动地修改（调节/滤除通过衬底传播的）光的强度，形状和/或分量）。 衬底具有前表面和后表面，并且对于光刻工艺的曝光（即，给定波长的光），在衬底的前表面处的至少一个掩模图案和其图像将被转印到 使用光掩模的光刻工艺中的电子器件衬底，在衬底的前表面处的盲图案和曝光光不透明的散射元件。 除了形成在基板的介质中之外，散射元件位于盲模式的下方，与基板的厚度方向上的盲模式并列。 另外，光掩模基板的一部分被不会熔化和/或蒸发光掩模基板的介质以形成散射元件的能量照射。 为此，可以使用飞秒激光。

公开(公告)号：US08007963B2

公开(公告)日：2011-08-30

申请号：US12639155

申请日：2009-12-16

申请人： Myoung-soo Lee ,  Young-su Sung ,  Sang-gyun Woo

发明人： Myoung-soo Lee ,  Young-su Sung ,  Sang-gyun Woo

IPC分类号： G03F1/00

CPC分类号： G03F1/72 ,  G03F1/60

摘要： A photomask or equivalent optical component includes a scattering element in the medium of a substrate, which actively modifies (adjusts/filters the intensity, shape, and/or components of) light that propagates through the substrate. The substrate has a front surface and a back surface and is transparent to exposure light of a photolithography process, i.e., light of given wavelength, at least one mask pattern at the front surface of the substrate and the image of which is to be transferred to an electronic device substrate in a photolithographic process using the photomask, a blind pattern at the front surface of the substrate and opaque to the exposure light, and the scattering element. The scattering element, in addition to being formed in the medium of the substrate, is situated below the blind pattern as juxtaposed with the blind pattern in the direction of the thickness of the substrate. Also, a section of the photomask substrate is irradiated with energy which does not melt and/or vaporize the medium of the photomask substrate to form the scattering element. To this end, a femtosecond laser may be used.

摘要翻译： 光掩模或等效光学部件包括在衬底的介质中的散射元件，其主动地修改（调节/滤除通过衬底传播的）光的强度，形状和/或分量）。 衬底具有前表面和后表面，并且对于光刻工艺的曝光（即，给定波长的光），在衬底的前表面处的至少一个掩模图案和其图像将被转印到 使用光掩模的光刻工艺中的电子器件衬底，在衬底的前表面处的盲图案和曝光光不透明的散射元件。 除了形成在基板的介质中之外，散射元件位于盲模式的下方，与基板的厚度方向上的盲模式并列。 另外，光掩模基板的一部分被不会熔化和/或蒸发光掩模基板的介质以形成散射元件的能量照射。 为此，可以使用飞秒激光。

公开(公告)号：US08242018B2

公开(公告)日：2012-08-14

申请号：US12943142

申请日：2010-11-10

申请人： Ji-young Lee ,  Hyun-jae Kang ,  Sang-gyun Woo

发明人： Ji-young Lee ,  Hyun-jae Kang ,  Sang-gyun Woo

IPC分类号： H01L21/44

CPC分类号： H01L21/76816 ,  H01L21/76897

摘要： A semiconductor device has a structure of contacts whose size and pitch are finer that those that can be produced under the resolution provided by conventional photolithography. The contact structure includes a semiconductor substrate, an interlayer insulating layer disposed on the substrate, annular spacers situated in the interlayer insulating layer, first contacts surrounded by the spacers, and a second contact buried in the interlayer insulating layer between each adjacent pair of the first spacers. The contact structure is formed by forming first contact holes in the interlayer insulating layer, forming the spacers over the sides of the first contact holes to leave second contact holes within the first contact holes, etching the interlayer insulating layer from between the spacers using the first spacers as an etch mask to form third contact holes, and filling the first and second contact holes with conductive material. In this way, the pitch of the contacts can be half that of the first contact holes.

摘要翻译： 半导体器件具有接触的结构，其尺寸和间距比通过常规光刻提供的分辨率可以产生的那些更小。 所述接触结构包括半导体衬底，设置在所述衬底上的层间绝缘层，位于所述层间绝缘层中的环形间隔物，被所述间隔物包围的第一接触部以及埋在所述层间绝缘层中的每个相邻的所述第一接触层 间隔物 接触结构通过在层间绝缘层中形成第一接触孔而形成，在第一接触孔的侧面上形成间隔物以在第一接触孔内留下第二接触孔，使用第一接触孔从间隔物之间​​蚀刻层间绝缘层 间隔物作为蚀刻掩模以形成第三接触孔，并且用导电材料填充第一和第二接触孔。 以这种方式，触点的间距可以是第一接触孔的间距的一半。

公开(公告)号：US07361609B2

公开(公告)日：2008-04-22

申请号：US11232703

申请日：2005-09-22

申请人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

发明人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

IPC分类号： H01L21/302

CPC分类号： H01L21/0274 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/31144

摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

摘要翻译： 形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。 可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。 然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。 还讨论了相关结构。

公开(公告)号：US06596459B1

公开(公告)日：2003-07-22

申请号：US09716269

申请日：2000-11-21

申请人： Hyun-woo Kim ,  Ki-young Kwon ,  Si-hyeung Lee ,  Dong-won Jung ,  Sook Lee ,  Kwang-sub Yoon ,  Sang-jun Choi ,  Sang-gyun Woo

发明人： Hyun-woo Kim ,  Ki-young Kwon ,  Si-hyeung Lee ,  Dong-won Jung ,  Sook Lee ,  Kwang-sub Yoon ,  Sang-jun Choi ,  Sang-gyun Woo

IPC分类号： G03F7004

CPC分类号： G03F7/0395 ,  G03F7/0397

摘要： There are provided a photosensitive polymer and a photoresist compositing containing the same. The photosensitive polymer is represented by the following formula: wherein R1 is an acid-labile tertiary alkyl ester group, R2 is hydrogen atom, methyl, ethyl, carboxyl, &ggr;-butyrolactone-2-yl ester, &ggr;-butyrolactone-3-yl ester, pantolactone-2-yl ester, mevalonic lactone ester, 3-tetrahydrofuranyl ester, 2,3-propylenecarbonate-1-yl ester, 3-methyl-&ggr;-butyrolactone-3-yl ester or C3 to C20 alicyclic hydrocarbon, a/(a+b+c) is 0.1˜0.7, b/(a+b+c) is 0.1˜0.8, c/(a+b+c) is 0.0˜0.8, and n is an integer in the range of 0 to 2.

摘要翻译： 提供光敏聚合物和含有它的光致抗蚀剂复合物。 光敏聚合物由下式表示：其中R1是酸不稳定的叔烷基酯基，R2是氢原子，甲基，乙基，羧基，γ-丁内酯-2-基酯，γ-丁内酯-3-基酯 ，泛酸内酯-2-基酯，甲羟戊酸内酯，3-四氢呋喃基酯，2,3-亚丙基碳酸酯-1-基酯，3-甲基-γ-丁内酯-3-基酯或C 3至C 20脂环族烃，a /（ a + b + c）为0.1〜0.7，b /（a + b + c）为0.1〜0.8，c /（a + b + c）为0.0〜0.8，n为0〜 2。

公开(公告)号：US07855408B2

公开(公告)日：2010-12-21

申请号：US11367436

申请日：2006-03-06

申请人： Ji-young Lee ,  Hyun-jae Kang ,  Sang-gyun Woo

发明人： Ji-young Lee ,  Hyun-jae Kang ,  Sang-gyun Woo

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119 ,  H01L29/788 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L21/76816 ,  H01L21/76897

摘要： A semiconductor device has a structure of contacts whose size and pitch are finer that those that can be produced under the resolution provided by conventional photolithography. The contact structure includes a semiconductor substrate, an interlayer insulating layer disposed on the substrate, annular spacers situated in the interlayer insulating layer, first contacts surrounded by the spacers, and a second contact buried in the interlayer insulating layer between each adjacent pair of the first spacers. The contact structure is formed by forming first contact holes in the interlayer insulating layer, forming the spacers over the sides of the first contact holes to leave second contact holes within the first contact holes, etching the interlayer insulating layer from between the spacers using the first spacers as an etch mask to form third contact holes, and filling the first and second contact holes with conductive material. In this way, the pitch of the contacts can be half that of the first contact holes.

摘要翻译： 半导体器件具有接触的结构，其尺寸和间距比通过常规光刻提供的分辨率可以产生的那些更小。 所述接触结构包括半导体衬底，设置在所述衬底上的层间绝缘层，位于所述层间绝缘层中的环形间隔物，被所述间隔物包围的第一接触部以及埋在所述层间绝缘层中的每个相邻的所述第一接触层 间隔物 接触结构通过在层间绝缘层中形成第一接触孔而形成，在第一接触孔的侧面上形成间隔物以在第一接触孔内留下第二接触孔，使用第一接触孔从间隔物之间​​蚀刻层间绝缘层 间隔物作为蚀刻掩模以形成第三接触孔，并且用导电材料填充第一和第二接触孔。 以这种方式，触点的间距可以是第一接触孔的间距的一半。

公开(公告)号：US07241552B2

公开(公告)日：2007-07-10

申请号：US10909384

申请日：2004-08-03

申请人： Kwang-sub Yoon ,  Dong-won Jung ,  Si-hyeung Lee ,  Hyun-woo Kim ,  Sook Lee ,  Sang-gyun Woo ,  Sang-jun Choi

发明人： Kwang-sub Yoon ,  Dong-won Jung ,  Si-hyeung Lee ,  Hyun-woo Kim ,  Sook Lee ,  Sang-gyun Woo ,  Sang-jun Choi

IPC分类号： G03F7/004

CPC分类号： G03F7/0395 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106

摘要： A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.

摘要翻译： 抗蚀剂组合物包括光致酸产生剂（PAG）和光敏聚合物。 光敏聚合物与（a）至少一种具有以下各式的单体聚合：其中R 1和R 2独立地为氢原子，烷基，羟基烷基，烷氧基，羰基或酯，x和y独立地为1至 6，和（b）至少一种（甲基）丙烯酸酯单体，马来酸酐单体和降冰片烯单体。

公开(公告)号：US07221014B2

公开(公告)日：2007-05-22

申请号：US11015993

申请日：2004-12-17

申请人： Doo-hoon Goo ,  Jung-hyeon Lee ,  Gi-sung Yeo ,  Han-ku Cho ,  Sang-gyun Woo

发明人： Doo-hoon Goo ,  Jung-hyeon Lee ,  Gi-sung Yeo ,  Han-ku Cho ,  Sang-gyun Woo

IPC分类号： H01L29/74 ,  H01L29/76

CPC分类号： H01L27/10888 ,  H01L27/0207 ,  H01L27/10814

摘要： DRAM devices include a plurality of word lines extending in a first direction and a plurality of bit lines extending in a second direction and intersecting the word lines. A plurality of active regions is provided that are electrically coupled to the word lines and the bit lines. Each of the active regions defines a single unit memory cell having an area of 6F2 in terms of a minimum line width F. Each of the active regions may be overlapped by only one word line and the active regions may be defined by an isolation region.

摘要翻译： DRAM装置包括沿第一方向延伸的多个字线和沿第二方向延伸并与字线相交的多个位线。 提供了多个有源区域，其被电耦合到字线和位线。 每个有源区域以最小线宽度F来限定具有6F 2的面积的单个单元存储单元。每个有源区域可以仅由一条字线重叠，并且有源区域 可以由隔离区限定。

公开(公告)号：US20060240361A1

公开(公告)日：2006-10-26

申请号：US11407295

申请日：2006-04-20

申请人： Ji-young Lee ,  Joon-soo Park ,  Sang-gyun Woo

发明人： Ji-young Lee ,  Joon-soo Park ,  Sang-gyun Woo

IPC分类号： G03F7/26

CPC分类号： H01L21/0337 ,  H01L21/0338

摘要： A method of forming a small pitch pattern using double spacers is provided. A material layer and first hard masks are used and characterized by a line pattern having a smaller line width than a separation distance between adjacent mask elements. A first spacer layer covering sidewall portions of the first hard mask and a second spacer layer are formed, and spacer-etched, thereby forming a spacer pattern-shaped second hard mask on sidewall portions of the first hard mask. A portion of the second spacer layer between the first hard mask and the second hard mask is selectively removed. The material layer is selectively etched using the first and second hard masks as etch masks, thereby forming the small pitch pattern.

摘要翻译： 提供了使用双间隔物形成小间距图案的方法。 使用材料层和第一硬掩模，其特征在于具有比相邻掩模元件之间的间隔距离更小的线宽的线图案。 形成覆盖第一硬掩模和第二间隔层的侧壁部分的第一间隔层，并间隔蚀刻，从而在第一硬掩模的侧壁部分上形成间隔图案形状的第二硬掩模。 选择性地去除第一硬掩模和第二硬掩模之间的第二间隔层的一部分。 使用第一和第二硬掩模作为蚀刻掩模来选择性地蚀刻材料层，从而形成小间距图案。

公开(公告)号：US20060063384A1

公开(公告)日：2006-03-23

申请号：US11232703

申请日：2005-09-22

申请人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

发明人： Jung-hwan Hah ,  Hyun-woo Kim ,  Mitsuhiro Hata ,  Sang-gyun Woo

IPC分类号： G03F1/00 ,  H01L21/302

CPC分类号： H01L21/0274 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/31144

摘要： Methods of forming an integrated circuit device may include forming a resist pattern on a layer of an integrated circuit device with portions of the layer being exposed through openings of the resist pattern. An organic-inorganic hybrid siloxane network film may be formed on the resist pattern. Portions of the layer exposed through the resist pattern and the organic-inorganic hybrid siloxane network film may then be removed. Related structures are also discussed.

摘要翻译： 形成集成电路器件的方法可以包括在集成电路器件的层上形成抗蚀剂图案，其中该层的部分通过抗蚀剂图案的开口露出。 可以在抗蚀剂图案上形成有机 - 无机杂化硅氧烷网膜。 然后可以去除通过抗蚀剂图案暴露的层的部分和有机 - 无机杂化硅氧烷网膜。 还讨论了相关结构。