公开(公告)号：US06686700B1

公开(公告)日：2004-02-03

申请号：US10347199

申请日：2003-01-21

申请人： Chao Ming Hsu ,  Chin-Hua Lin ,  Yu-Chih Tseng Cheng

发明人： Chao Ming Hsu ,  Chin-Hua Lin ,  Yu-Chih Tseng Cheng

IPC分类号： H05B3700

CPC分类号： H05B39/09 ,  H01K1/625

摘要： The invention provides an improved structure of a string of surface-contacted flasher type lamps. Each flasher type lamp has a closed cover, and inside the cover, there are two conducting lines. Each conducting line has an inner end point and a concave portion, and the inner end points of the conducting lines are located inside the cover, whereas the other ends of the conducting lines penetrate through the cover to the outside. A heat-resistant fuse is connected between the inner end points of the conducting lines, while a fuse is connected between the concave portions of the conducting lines. A core ball with diamond-shape surfaces is located under the fuse wrapping the two conducting lines. Each of the compound metal heat leaning slices is welded to one of the conducting lines in a position between the inner end point and the concave portion of the conducting line. When the heat-resistant fuse is conducting and emitting heat, the compound metal heat leaning slices will bend and touch each other due to receiving heat; therefore, a short circuit occurs. The short circuit stops the heat-resistant fuse from conducting, which in turn will cause the temperature inside the cover to drop. The compound metal heat leaning slices will be separated due to the lowered temperature, and then the heat-resistant fuse will be conducting again and emitting heat. Hence, the flashing effect of a flasher type lamp can be obtained.

摘要翻译： 本发明提供了一系列表面接触的闪光灯型灯的改进的结构。 每个闪光灯类型的灯具有封闭的盖子，并且在盖子的内部有两条导线。 每个导线具有内端点和凹部，并且导线的内端点位于盖内，而导线的另一端穿过盖穿过外部。 在导线的内端点之间连接有耐热保险丝，同时在导线的凹部之间连接保险丝。 具有金刚石表面的芯球位于保险丝下面，包裹着两条导线。 在导线的内端点和凹部之间的位置，将每个复合金属散热片焊接到导线之一。 当耐热保险丝导通并发出热量时，复合金属热倾斜片由于受热而弯曲并相互接触; 因此，发生短路。 短路会阻止耐热保险丝导通，这又会导致盖内的温度下降。 复合金属散热片由于温度降低而分离，然后耐热保险丝再次导通并发热。 因此，可以获得闪光灯型的闪光效果。

公开(公告)号：US09487600B2

公开(公告)日：2016-11-08

申请号：US13209190

申请日：2011-08-12

申请人： Seth B. Darling ,  Jeffrey Elam ,  Yu-Chih Tseng ,  Qing Peng

发明人： Seth B. Darling ,  Jeffrey Elam ,  Yu-Chih Tseng ,  Qing Peng

IPC分类号： C08F8/42

CPC分类号： C08G83/001 ,  C08F8/42 ,  H01G9/02 ,  H01J9/025 ,  H01L21/0271 ,  H01L51/4213 ,  H01L51/441 ,  H01M2/166 ,  H01M10/0565 ,  H01M2300/0082

摘要： A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic features with patterned nanostructures defined by the configuration of the microdomain.

摘要翻译： 通过渗透具有多个自组装的周期性聚合物微畴的嵌段共聚物支架来制备可调谐无机图案化纳米尺度的方法。 该方法可以使用与原子层沉积（ALD）相关的顺序渗透合成（SIS）。 该方法包括选择配置为与限定微区的共聚物单元选择性反应但与该共聚物的另一聚合物单元基本上不反应的金属前体。 选择性地在微区上形成可调谐的无机特征以形成金属前体和共反应物的杂化有机/无机复合材料。 可以任选地除去有机组分以获得由微区的构型定义的图案化纳米结构的无机特征。

公开(公告)号：US08980418B2

公开(公告)日：2015-03-17

申请号：US13427619

申请日：2012-03-22

申请人： Seth B. Darling ,  Jeffrey W. Elam ,  Yu-Chih Tseng ,  Qing Peng

发明人： Seth B. Darling ,  Jeffrey W. Elam ,  Yu-Chih Tseng ,  Qing Peng

IPC分类号： B32B27/32 ,  C03C15/00 ,  C03C25/68 ,  B32B15/08 ,  H01L21/027 ,  G03F7/40 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/3081 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  G03F7/0041 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/0279 ,  H01L21/3065 ,  H01L21/3086 ,  Y10T428/31522

摘要： A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

摘要翻译： 通过连续渗透合成（SIS）由无机保护组分改性的等离子体蚀刻抗蚀剂材料和制备改性抗蚀剂材料的方法。 改进的抗蚀剂材料的特征在于相对于未改性的抗蚀剂材料具有改进的抗等离子体蚀刻或相关工艺的耐受性，从而允许将图案化特征形成到基底材料中，该基材可以是高纵横比特征。 SIS工艺通过对渗透抗蚀剂材料的气相前体的多次交替曝光而在体抗蚀材料内形成保护组分。 可以使用光刻，电子束光刻或嵌段共聚物自组装工艺来初始图案化等离子体蚀刻抗蚀剂材料。

公开(公告)号：US20120046421A1

公开(公告)日：2012-02-23

申请号：US13209190

申请日：2011-08-12

申请人： Seth B. Darling ,  Jeffrey Elam ,  Yu-Chih Tseng ,  Qing Peng

发明人： Seth B. Darling ,  Jeffrey Elam ,  Yu-Chih Tseng ,  Qing Peng

IPC分类号： C08F8/42

CPC分类号： C08G83/001 ,  C08F8/42 ,  H01G9/02 ,  H01J9/025 ,  H01L21/0271 ,  H01L51/4213 ,  H01L51/441 ,  H01M2/166 ,  H01M10/0565 ,  H01M2300/0082

摘要： A method of preparing tunable inorganic patterned nanofeatures by infiltration of a block copolymer scaffold having a plurality of self-assembled periodic polymer microdomains. The method may be used sequential infiltration synthesis (SIS), related to atomic layer deposition (ALD). The method includes selecting a metal precursor that is configured to selectively react with the copolymer unit defining the microdomain but is substantially non-reactive with another polymer unit of the copolymer. A tunable inorganic features is selectively formed on the microdomain to form a hybrid organic/inorganic composite material of the metal precursor and a co-reactant. The organic component may be optionally removed to obtain an inorganic feature s with patterned nanostructures defined by the configuration of the microdomain.

摘要翻译： 通过渗透具有多个自组装的周期性聚合物微畴的嵌段共聚物支架来制备可调谐无机图案化纳米尺度的方法。 该方法可以使用与原子层沉积（ALD）相关的顺序渗透合成（SIS）。 该方法包括选择配置为与限定微区的共聚物单元选择性反应但与该共聚物的另一聚合物单元基本上不反应的金属前体。 选择性地在微区上形成可调谐的无机特征以形成金属前体和共反应物的杂化有机/无机复合材料。 可以任选地除去有机组分以获得具有由微区域的构型限定的图案化纳米结构的无机特征。

公开(公告)号：US20120241411A1

公开(公告)日：2012-09-27

申请号：US13427619

申请日：2012-03-22

申请人： Seth B. Darling ,  Jeffrey W. Elam ,  Yu-Chih Tseng ,  Qing Peng

发明人： Seth B. Darling ,  Jeffrey W. Elam ,  Yu-Chih Tseng ,  Qing Peng

IPC分类号： H01L21/3065 ,  C23F1/00

CPC分类号： H01L21/3081 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  G03F7/0041 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/0279 ,  H01L21/3065 ,  H01L21/3086 ,  Y10T428/31522

摘要： A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.

摘要翻译： 通过连续渗透合成（SIS）由无机保护组分改性的等离子体蚀刻抗蚀剂材料和制备改性抗蚀剂材料的方法。 改进的抗蚀剂材料的特征在于相对于未改性的抗蚀剂材料具有改进的抗等离子体蚀刻或相关工艺的耐受性，从而允许将图案化特征形成到基底材料中，该基材可以是高纵横比特征。 SIS工艺通过对渗透抗蚀剂材料的气相前体的多次交替曝光而在体抗蚀材料内形成保护组分。 可以使用光刻，电子束光刻或嵌段共聚物自组装工艺来初始图案化等离子体蚀刻抗蚀剂材料。