公开(公告)号：US20130040539A1

公开(公告)日：2013-02-14

申请号：US13648971

申请日：2012-10-10

申请人： Yu-Piao WANG

发明人： Yu-Piao WANG

IPC分类号： B24D11/00 ,  B24D18/00 ,  B24B7/00

CPC分类号： B24B37/26

摘要： A polishing pad, a polishing method and a method of forming a polishing pad are provided. The polishing pad includes a polishing layer and a plurality of arc grooves. The arc grooves are disposed in the polishing layer. Each of the arc grooves has two ends, and at least one end thereof has an inclined wall. The angle between the inclined wall of each groove and the surface plane of the polishing layer is less than 90 degree.

摘要翻译： 提供抛光垫，抛光方法和形成抛光垫的方法。 抛光垫包括抛光层和多个弧槽。 弧形槽设置在抛光层中。 每个弧形槽具有两个端部，并且其至少一个端部具有倾斜壁。 每个槽的倾斜壁与抛光层的表面之间的角度小于90度。

公开(公告)号：US20120244785A1

公开(公告)日：2012-09-27

申请号：US13198729

申请日：2011-08-05

申请人： Yu-Piao Wang ,  Jen-Feng Cheng ,  Te-Yang Chen ,  Ya-Ling Chen

发明人： Yu-Piao Wang ,  Jen-Feng Cheng ,  Te-Yang Chen ,  Ya-Ling Chen

IPC分类号： B24B1/00

CPC分类号： B24B37/042 ,  B24B37/105 ,  B24B37/26

摘要： A polishing method and a polishing system are provided. By means of adjusting a rotational center of a polishing article corresponding to positions of a polishing pad or polishing pads, a polishing rate of the polishing article surface has a better uniformity, resulted from compensation of polishing rates at the rotational center of the polishing article.

摘要翻译： 提供了抛光方法和抛光系统。 通过调整与抛光垫或抛光垫的位置相对应的研磨制品的旋转中心，抛光物品表面的抛光速率由抛光物品的旋转中心的抛光速率的补偿得到更好的均匀性。

公开(公告)号：US07148113B2

公开(公告)日：2006-12-12

申请号：US11160983

申请日：2005-07-19

申请人： Yu-Piao Wang

发明人： Yu-Piao Wang

IPC分类号： H01L21/8234

CPC分类号： H01L21/76897 ,  H01L21/28044 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/823475 ,  H01L23/5222 ,  H01L29/6653 ,  H01L29/66545 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device is described. A gate dielectric layer is formed on a substrate, and several gate structures having a gate conductor, a cap layer and spacers are formed on the gate dielectric layer. A mask layer is formed over the substrate covering a portion of the gate structures. Removing the cap layer and spacers that are not covered by the mask layer. After the mask layer is removed, a dielectric layer is formed over the substrate covering the gate structures. A self-aligned contact hole is formed in the dielectric layer. A conductive layer is formed in the self-aligned contact hole and on the dielectric layer. Since the cap layer and spacers that are not covered by the mask layer are removed and substituted by the dielectric layer having lower dielectric constant property, the parasitic capacitance can be reduced.

摘要翻译： 对半导体装置的制造方法进行说明。 在基板上形成栅极介电层，在栅极电介质层上形成具有栅极导体，盖层和间隔物的多个栅极结构。 在覆盖栅极结构的一部分的衬底上形成掩模层。 去除未被掩模层覆盖的盖层和间隔物。 在去除掩模层之后，在覆盖栅极结构的衬底的上方形成介电层。 在电介质层中形成自对准的接触孔。 在自对准接触孔和电介质层上形成导电层。 由于未被掩模层覆盖的覆盖层和间隔物被具有较低介电常数特性的介电层所取代并替代，所以可以减小寄生电容。

公开(公告)号：US06686278B2

公开(公告)日：2004-02-03

申请号：US09884799

申请日：2001-06-19

申请人： Yu-Piao Wang ,  Chia-Che Chuang

发明人： Yu-Piao Wang ,  Chia-Che Chuang

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76876 ,  H01L2221/1089

摘要： A method for forming a plug metal layer is disclosed and includes the following steps. Performance of an atomic layer deposition (ALD) at least once to form a continuous metal seed layer (CMSL) on a barrier layer, wherein the atomic layer deposition comprise: a mixing gas of hydrogen and silane, such as hydroxy silane or tetrahydroxy silane, being transported on the barrier layer. Next, performance of a purge/vacuum process. Then transporting a reactive gas, such as WF6, to form the continuous metal seed layer (CMSL). A subsequent cycle step of atomic layer deposition (ALD) can be repeated to form the thickness of the continuous metal seed layer (CMSL) to about 20 to 40 Å.

摘要翻译： 公开了一种形成插塞金属层的方法，包括以下步骤。 原子层沉积（ALD）的性能至少一次以在阻挡层上形成连续金属种子层（CMSL），其中原子层沉积包括：氢和硅烷的混合气体，例如羟基硅烷或四羟基硅烷， 在阻挡层上运输。 接下来，执行吹扫/真空过程。 然后输送诸如WF6的反应气体以形成连续的金属种子层（CMSL）。 可以重复原子层沉积（ALD）的随后的循环步骤以将连续金属种子层（CMSL）的厚度形成为约20至40埃。

公开(公告)号：US08398461B2

公开(公告)日：2013-03-19

申请号：US12691184

申请日：2010-01-21

申请人： Yu-Piao Wang

发明人： Yu-Piao Wang

IPC分类号： B24B1/00

CPC分类号： B24B37/26

摘要： A polishing method, a polishing pad and a polishing system are provided. In the invention, the polishing pad is used to polish a polishing article. The polishing pad includes a polishing layer and a surface pattern disposed in the polishing layer. The polishing layer includes a polishing surface, a rotating central region, and a peripheral region. The surface pattern includes many grooves distributed from near the rotating central region and extending outward to near the peripheral region. The grooves include many groove cross sections along a circumferential direction of a same radius. Each of the groove cross sections has a left sidewall and a right sidewall. An included angle is formed by the polishing surface and one of a group of the left sidewalls and a group of the right sidewalls. The included angle is an obtuse angle.

摘要翻译： 提供抛光方法，抛光垫和抛光系统。 在本发明中，抛光垫用于抛光抛光制品。 抛光垫包括抛光层和布置在抛光层中的表面图案。 抛光层包括抛光表面，旋转中心区域和周边区域。 表面图案包括从旋转中心区域附近分布并向外延伸到周边区域附近的许多凹槽。 凹槽包括沿相同半径的圆周方向的许多凹槽横截面。 每个槽横截面具有左侧壁和右侧壁。 夹角由抛光表面和一组左侧壁和一组右侧壁中的一个形成。 夹角是钝角。

公开(公告)号：US08393936B2

公开(公告)日：2013-03-12

申请号：US12546198

申请日：2009-08-24

申请人： Yu Piao Wang

发明人： Yu Piao Wang

IPC分类号： B24B7/22

CPC分类号： B24B37/32

摘要： The edge effect or variation in polishing edge profile on a substrate undergoing CMP is reduced by structuring a retaining ring, housed in a carrier head for retaining the substrate, such that the polishing edge profile shifts back and forth with respect to the center of the substrate. Embodiments include structuring the retaining ring such that the width between inner and outer surfaces varies by an amount sufficient to compensate for polishing edge profile variation. Embodiments also include structuring the retaining ring such that the distance from the outer surface to the geometric inner surface varies. Embodiments further include structuring the retaining ring such that the distance between the outer surface to the perimeter of the substrate retained by the inner surface of the retaining ring varies.

公开(公告)号：US08303382B2

公开(公告)日：2012-11-06

申请号：US11542270

申请日：2006-10-04

申请人： Yu-Piao Wang ,  Yun-Liang Ouyang

发明人： Yu-Piao Wang ,  Yun-Liang Ouyang

IPC分类号： B24D11/00

CPC分类号： B24B37/22 ,  B24B37/26 ,  B24D18/00

摘要： A polishing pad, comprising a mounting surface and an opposing polishing surface with a polishing pattern having at least one aperture thereon, is formed with an adhesive layer adhered to the mounting surface with uniform adhesive strength therebetween. Embodiments include applying an adhesive layer to the mounting surface with uniform pressure prior to forming the polishing pattern on the polishing surface. Embodiments also include forming the polishing pattern having at least one aperture, forming a fitter having a surface pattern opposite to the polishing pattern and having a projection, positioning the fitter on the polishing pattern so that the projection fills the aperture in the polishing pattern forming a composite having substantially parallel opposing surfaces, applying pressure to bond the adhesive layer to the mounting surface with substantially uniform adhesive strength therebetween, and removing the fitter.

摘要翻译： 抛光垫，其包括安装表面和具有其上具有至少一个孔的抛光图案的相对的抛光表面，其上形成粘合剂层，粘附层具有均匀的粘合强度。 实施例包括在形成研磨表面上的抛光图案之前，以均匀的压力将粘合剂层施加到安装表面。 实施例还包括形成具有至少一个孔的抛光图案，形成具有与抛光图案相对的表面图案并具有突起的钳具，将钳工件定位在抛光图案上，使得突起填充抛光图案中的孔，形成 复合材料具有基本上平行的相对表面，施加压力以将粘合剂层粘合到安装表面，其间具有基本上均匀的粘合强度，并且去除钳具。

公开(公告)号：US07597609B2

公开(公告)日：2009-10-06

申请号：US11546350

申请日：2006-10-12

申请人： Yu-Piao Wang

发明人： Yu-Piao Wang

IPC分类号： B24B7/22

CPC分类号： B24B37/32

摘要： The edge effect or variation in polishing edge profile on a substrate undergoing CMP is reduced by structuring a retaining ring, housed in a carrier head for retaining the substrate, such that the polishing edge profile shifts back and forth with respect to the center of the substrate. Embodiments include structuring the retaining ring such that the width between inner and outer surfaces varies by an amount sufficient to compensate for polishing edge profile variation. Embodiments also include structuring the retaining ring such that the distance from the outer surface to the geometric inner surface varies. Embodiments further include structuring the retaining ring such that the distance between the outer surface to the perimeter of the substrate retained by the inner surface of the retaining ring varies.

摘要翻译： 经历CMP的衬底上的抛光边缘轮廓的边缘效应或变化通过构造保持环而减少，该保持环容纳在用于保持衬底的载体头中，使得抛光边缘轮廓相对于衬底的中心来回移动 。 实施例包括构造保持环，使得内表面和外表面之间的宽度变化足以补偿抛光边缘轮廓变化的量。 实施例还包括构造保持环，使得从外表面到几何内表面的距离变化。 实施例还包括构造保持环，使得由保持环的内表面保持的衬底的外表面与周边之间的距离变化。

公开(公告)号：US20090104849A1

公开(公告)日：2009-04-23

申请号：US11960451

申请日：2007-12-19

申请人： Yu-Piao WANG

发明人： Yu-Piao WANG

IPC分类号： B24B29/00 ,  B24B1/00

CPC分类号： B24B37/26

摘要： A polishing pad and a polishing method for polishing a substrate are described. The polishing pad includes a polishing layer and at least two grooves. The grooves form polishing tracks respectively. The polishing tracks collectively construct an even tracking zone. A better polishing uniformity of a substrate surface is achieved with the even tracking zone.

摘要翻译： 对抛光垫和研磨基板的研磨方法进行说明。 抛光垫包括抛光层和至少两个凹槽。 凹槽分别形成抛光轨道。 抛光轨道共同构成均匀的跟踪区域。 利用均匀跟踪区域可以获得更好的抛光均匀性。

公开(公告)号：US06465348B1

公开(公告)日：2002-10-15

申请号：US09875506

申请日：2001-06-06

申请人： Yu-Piao Wang

发明人： Yu-Piao Wang

IPC分类号： H01L21443

CPC分类号： H01L21/76862 ,  H01L21/28556 ,  H01L21/76843

摘要： A MOCVD is performed to form a titanium nitride layer on the surface of a semiconductor substrate. Following that, a pulsed plasma treatment is performed to remove hydro-carbon impurities from the titanium nitride layer. Therein, the pulsed plasma treatment is performed in a pressure chamber comprising nitrogen gas (N2) hydrogen gas (H2) or argon gas (Ar). A pressure of the pressure chamber is controlled to between 1 to 3 Torr, with the power of the pressure chamber controlled to between 500 and 1000 watts.

摘要翻译： 执行MOCVD以在半导体衬底的表面上形成氮化钛层。 之后，进行脉冲等离子体处理以从氮化钛层去除氢碳杂质。 其中，脉冲等离子体处理在包含氮气（N 2）氢气（H 2）或氩气（Ar）的压力室中进行。 压力室的压力控制在1至3托之间，压力室的功率控制在500至1000瓦特之间。