公开(公告)号：US07688555B2

公开(公告)日：2010-03-30

申请号：US10868716

申请日：2004-06-15

Applicant: Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

Inventor： Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

IPC: G11B5/39 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

Abstract: A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.

Abstract translation: 用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。 硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。 可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。 本发明还包括层压硬偏置结构。 可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。 结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

公开(公告)号：US07336452B2

公开(公告)日：2008-02-26

申请号：US11036957

申请日：2005-01-14

Applicant: Moris Dovek ,  Po-Kang Wang ,  Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Yun-Fei Li

Inventor： Moris Dovek ,  Po-Kang Wang ,  Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Yun-Fei Li

IPC: G11B5/33

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49036 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by introducing an extra layer between the bias electrodes and the free layer. This layer protects the free layer during processing but is thin enough to not interrupt exchange between the bias electrodes and the free layer. In one embodiment this is a layer of copper about 5 Å thick and parallel exchange is operative. In other embodiments ruthenium is used to provide antiparallel exchange between the bias electrode and the free layer. A process for manufacturing the structure is also described.

Abstract translation: 在基于底部自旋阀的磁性读取头中，优选的结构是使纵向偏置层与自由层直接接触。 这样的结构很难制造。 本发明通过在偏置电极和自由层之间引入额外的层来克服这个问题。 该层在处理过程中保护自由层，但足够薄到不会中断偏置电极和自由层之间的交换。 在一个实施例中，这是一层厚约5埃的铜层并且平行的交换是可操作的。 在其他实施方案中，钌用于在偏置电极和自由层之间提供反向平行交换。 还描述了用于制造该结构的方法。

公开(公告)号：US07327540B2

公开(公告)日：2008-02-05

申请号：US10858029

申请日：2004-06-01

Applicant: Yun-Fei Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng

Inventor： Yun-Fei Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng

IPC: G11B5/33 ,  G11B5/127 ,  G11B5/39

CPC classification number: G11B5/39 ,  Y10T428/11 ,  Y10T428/115

Abstract: A hard bias layer that forms an abutting junction with a free layer in a GMR element and is comprised of FePtCu or FePtCuX where X is B, C, O, Si, or N is disclosed. The FePtCu layer has a composition of about 45 atomic % Fe, 45 atomic % Pt, and 10 atomic % Cu and does not require a seed layer to achieve an ordered structure. The FePtCu layer is annealed at a temperature of about 280° C. and has an Hc value more than double that of a conventional CoCrPt hard bias layer with a similar thickness. Since the FePtCu hard bias layer adjoins a free layer, it has a higher sensor edge pinning efficiency than a configuration with a CoCrPt layer on a seed layer. The novel hard bias layer is compatible with either a top or bottom spin valve structure in a GMR sensor.

Abstract translation: 公开了与GMR元件中的自由层形成邻接连接并由FePtCu或FePtCuX组成的硬偏置层，其中X是B，C，O，Si或N。 FePtCu层具有约45原子％Fe，45原子％Pt和10原子％Cu的组成，并且不需要种子层来实现有序结构。 FePtCu层在约280℃的温度下进行退火，并且其Hc值大于具有相似厚度的常规CoCrPt硬偏压层的Hc值的两倍以上。 由于FePtCu硬偏置层与自由层相邻，因此与种子层上的CoCrPt层的配置相比，传感器边缘钉扎效率更高。 新颖的硬偏置层与GMR传感器中的顶部或底部自旋阀结构兼容。

公开(公告)号：US20060126231A1

公开(公告)日：2006-06-15

申请号：US11010105

申请日：2004-12-10

Applicant: Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

Inventor： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

IPC: G11B5/33 ,  G11B5/127

CPC classification number: G11B5/3903 ,  H01L43/10

Abstract: In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction. A process for manufacturing the device is also described.

Abstract translation: 在本发明中，为了最小化电流分流效应同时保持磁性柔软性和低磁致伸缩性，我们用CIP GMR传感器中的复合自由层的FL2部分代替具有高电阻率FeNi的低电阻率NiFe。 还描述了用于制造该装置的方法。

公开(公告)号：US20060061916A1

公开(公告)日：2006-03-23

申请号：US11268074

申请日：2005-11-07

Applicant: Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  C. C. Han

Inventor： Yun-Fei Li ,  Hui-Chuan Wang ,  Chyu-Jiuh Torng ,  C. C. Han

IPC: G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A problem associated with current bottom spin valve designs is that it is difficult to avoid magnetic charge accumulation at the edge of the sensor area, making a coherent spin rotation during sensing difficult to achieve. This problem has been eliminated by introducing an exchange coupling layer between the free layer and the ferromagnetic layer that is used to achieve longitudinal bias for stabilization and by extending the free layer well beyond the sensor area. After all layers have been deposited, the read gap is formed by etching down as far as this layer. Since it is not critical exactly how much of the biasing layers (antiferromagnetic as well as ferromagnetic) are removed, the etching requirements are greatly relaxed. Whatever material remains in the gap is then oxidized thereby providing a capping layer as well as a good interface for specular reflection in the sensor region.

公开(公告)号：US20050275975A1

公开(公告)日：2005-12-15

申请号：US10868716

申请日：2004-06-15

Applicant: Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

Inventor： Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

IPC: G11B5/127 ,  G11B5/33 ,  G11B5/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

Abstract: A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.

Abstract translation: 用于偏置读取头内的MR元件中的自由层的硬偏置结构包括具有Co ++ 78.6Cr 5.2 Pt 16.2的复合硬偏置层 另一方面，本发明的另一个目的是提供一种用于制造高分子材料的方法。 上部Co 65 N 15 15 Pt 20 O层具有较大的Hc值，并且厚度比Co < 丙烯酸甲酯，丙烯酸甲酯，丙烯酸丁酯，丙烯酸乙酯 硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。 任选地，Co ++ C 26.6 Cr 2 Pt 16.2层的厚度为零，并且Co 65 在BCC底层上形成> 15 20 层。 本发明还包括层压硬偏置结构。 可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。 结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

公开(公告)号：US20050122637A1

公开(公告)日：2005-06-09

申请号：US11036529

申请日：2005-01-14

Applicant: Cheng Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  YouFeng Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Han

Inventor： Cheng Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  YouFeng Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Han

IPC: G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

公开(公告)号：US08486285B2

公开(公告)日：2013-07-16

申请号：US12544998

申请日：2009-08-20

Applicant: Ronghui Zhou ,  Ming Jiang ,  Xiaohai Xiang ,  Jinwen Wang ,  Guanghong Luo ,  Yun-Fei Li

Inventor： Ronghui Zhou ,  Ming Jiang ,  Xiaohai Xiang ,  Jinwen Wang ,  Guanghong Luo ,  Yun-Fei Li

IPC: B44C1/22

CPC classification number: G11B5/855 ,  Y10T29/49048

Abstract: A method for forming a write pole comprises forming a stop layer over a substrate layer of a wafer, the stop layer having an opening above a damascene trench in the substrate layer, and forming a buffer layer over the stop layer, the buffer layer having an opening above the opening of the stop layer. The method further comprises plating a layer of magnetic material over the wafer, disposing a first sacrificial material over a region of the magnetic material above the damascene trench, performing a milling or etching operation over the wafer to remove the magnetic material not covered by the first sacrificial material and to remove the first sacrificial material, disposing a second sacrificial material over the wafer, and performing a polishing operation over the wafer to remove the region of the magnetic material above the damascene trench, the second sacrificial material, and the buffer layer.

Abstract translation: 用于形成写极的方法包括在晶片的衬底层上形成阻挡层，所述阻挡层在衬底层中具有在镶嵌沟槽上方的开口，以及在停止层上形成缓冲层，所述缓冲层具有 在停止层的开口上方开口。 该方法还包括在晶片上镀覆一层磁性材料，在金刚石沟槽上方的磁性材料的区域上设置第一牺牲材料，在晶片上进行研磨或蚀刻操作，以去除第一 牺牲材料并且去除第一牺牲材料，在晶片上设置第二牺牲材料，以及在晶片上执行抛光操作以去除镶嵌沟槽，第二牺牲材料和缓冲层之上的磁性材料的区域。

公开(公告)号：US08454846B1

公开(公告)日：2013-06-04

申请号：US12817376

申请日：2010-06-17

Applicant: Ronghui Zhou ,  Ming Jiang ,  Danning Yang ,  Yun-Fei Li

Inventor： Ronghui Zhou ,  Ming Jiang ,  Danning Yang ,  Yun-Fei Li

IPC: B44C1/22 ,  G11B5/31

CPC classification number: G11B5/3163 ,  G11B5/315

Abstract: A method and system for fabricating magnetic recording transducer are described. The magnetic recording transducer has a main pole including a plurality of sides, an intermediate layer adjacent to the sides of the main pole, and a field region distal from the main pole. The method and system include providing at least one trench in the intermediate layer. The trench(es) are between the main pole and the field region. The method and system also include providing a stop layer. A portion of the stop layer resides in at least part of the trench(es) and on at least part of the field region. The method and system also include removing a portion of the intermediate layer using a wet etch. The stop layer is resistant to removal by the wet etch. The method and system also include depositing a full wrap-around shield layer on the main pole.

Abstract translation: 描述了用于制造磁记录换能器的方法和系统。 磁记录传感器具有包括多个侧面的主极，与主极的侧面相邻的中间层和远离主极的场区域。 该方法和系统包括在中间层中提供至少一个沟槽。 沟槽在主极和场区之间。 该方法和系统还包括提供停止层。 停止层的一部分位于沟槽的至少一部分中，并且位于场区域的至少一部分上。 该方法和系统还包括使用湿蚀刻去除中间层的一部分。 止挡层耐湿蚀刻能够去除。 该方法和系统还包括在主极上沉积完整的环绕屏蔽层。

公开(公告)号：US08320077B1

公开(公告)日：2012-11-27

申请号：US12334753

申请日：2008-12-15

Applicant: Yunjun Tang ,  Yun-Fei Li ,  Yingjian Chen

Inventor： Yunjun Tang ,  Yun-Fei Li ,  Yingjian Chen

IPC: G11B5/127 ,  G11B5/147 ,  G11B5/31

CPC classification number: G11B5/147 ,  G11B5/1278 ,  G11B5/3113 ,  G11B5/3116 ,  G11B5/3146

Abstract: A method and system for providing a high moment film are disclosed. The high moment film might be used in structures, such as a pole, of a magnetic transducer. The method and system includes providing a plurality of high moment layers and at least one soft magnetic layer interleaved with and ferromagnetically coupled with the plurality of high moment layers. Each of the plurality of high moment layers has a magnetic moment of greater than 2.4 Tesla. The at least one soft magnetic layer has a hard axis coercivity of not more than twenty Oersted. The high moment film has a total thickness of at least one thousand Angstroms.

Abstract translation: 公开了一种用于提供高力矩薄膜的方法和系统。 高力矩胶片可用于磁性传感器的结构，如磁极。 该方法和系统包括提供多个高力矩层和至少一个与多个高力矩层交织并且与磁化耦合的软磁层。 多个高力矩层中的每一个具有大于2.4特斯拉的磁矩。 所述至少一个软磁性层具有不超过二十奥斯特的硬轴矫顽力。 高力矩薄膜的总厚度至少为一千埃。