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公开(公告)号:US08383316B2
公开(公告)日:2013-02-26
申请号:US11774171
申请日:2007-07-06
CPC分类号: G03F7/20 , G03F7/0043 , G03F7/0047 , G03F7/2002 , G03F7/2022 , G03F7/2041 , G03F7/2053 , Y10T428/24479 , Y10T428/31504
摘要: New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.
摘要翻译: 本公开描述了涉及使用两步技术提供用于光刻的非线性抗蚀剂的多步可逆光化学反应的新途径。 它们可以根据光的强度二次提供曝光。 还描述了几个具体实例,包括但不限于使用纳米晶体。 结合双重图案化,这些方法可能产生亚衍射极限特征密度。
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公开(公告)号:US20080176166A1
公开(公告)日:2008-07-24
申请号:US11774171
申请日:2007-07-06
CPC分类号: G03F7/20 , G03F7/0043 , G03F7/0047 , G03F7/2002 , G03F7/2022 , G03F7/2041 , G03F7/2053 , Y10T428/24479 , Y10T428/31504
摘要: New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.
摘要翻译: 本公开描述了涉及使用两步技术提供用于光刻的非线性抗蚀剂的多步可逆光化学反应的新途径。 它们可以根据光的强度二次提供曝光。 还描述了几个具体实例,包括但不限于使用纳米晶体。 结合双重图案化,这些方法可能产生亚衍射极限特征密度。
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