ADVANCED LIGHT EXTRACTION STRUCTURE
    1.
    发明申请
    ADVANCED LIGHT EXTRACTION STRUCTURE 审中-公开
    先进的光提取结构

    公开(公告)号:US20150380688A1

    公开(公告)日:2015-12-31

    申请号:US14120419

    申请日:2013-07-08

    IPC分类号: H01L51/52 H01L27/32

    摘要: Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.

    摘要翻译: 描述了半导体纳米晶体及其在溶剂和其它介质中的分散体的制备。 本文所述的纳米晶体具有小(1-10nm)的粒度,具有最小的聚集,并且可以高产率合成。 在合成后的纳米晶体上的封端剂以及经历了帽交换反应的纳米晶体导致在极性和非极性溶剂中形成稳定的悬浮液,这可能导致形成高质量的纳米复合膜。

    Methods for transferring a two-dimensional programmable exposure pattern for photolithography
    4.
    发明授权
    Methods for transferring a two-dimensional programmable exposure pattern for photolithography 失效
    用于转印用于光刻的二维可编程曝光图案的方法

    公开(公告)号:US06291110B1

    公开(公告)日:2001-09-18

    申请号:US09066979

    申请日:1998-04-28

    IPC分类号: G03F900

    CPC分类号: G03F7/70375 G03F7/70291

    摘要: The present invention overcomes many of the disadvantages of prior lithographic microfabrication processes while providing further improvements that can significantly enhance the ability to make more complicated semiconductor chips at lower cost. A new type of programmable structure for exposing a wafer allows the lithographic pattern to be changed under electronic control. This provides great flexibility, increasing the throughput and decreasing the cost of chip manufacture and providing numerous other advantages. The programmable structure consists of an array of shutters that can be programmed to either transmit light to the wafer (referred to as its “open” state) or not transmit light to the wafer (referred to as its “closed” state). The programmable structure can comprise or include an array of selective amplifiers. Thus, each selective amplifier is programmed to either amplify light (somewhat analogous to the “open” or “transparent” state of a shutter) or be “non-amplifying” (its “closed” or “opaque” state). In the non-amplifying state, some portion of the incident light is transmitted through the amplifier material. The shutters and selective amplifiers can work in tandem to form a “programmable layer”. A programmable technique is provided for creating a pattern to be imaged onto a wafer that can be implemented as a viable production technique. Thus, the present invention also provides a technique of making integrated circuits. A diffraction limiter can be used to provide certain advantages associated with contact lithography without requiring some of the disadvantages of contact lithography.

    摘要翻译: 本发明克服了现有的平版印刷微细加工工艺的许多缺点,同时提供了可以以更低成本显着提高制造更复杂的半导体芯片的能力的进一步改进。 用于曝光晶片的新型可编程结构允许在电子控制下改变光刻图案。 这提供了极大的灵活性,增加了生产量并且降低了芯片制造的成本并且提供了许多其他优点。 可编程结构由一组快门组成,可以被编程为将光传输到晶片(称为其“打开”状态)或不将光传输到晶片(称为其“关闭”状态))。 可编程结构可以包括或包括选择放大器的阵列。 因此,每个选择放大器被编程为放大光(有点类似于快门的“打开”或“透明”状态)或者是“非放大”(其“闭合”或“不透明”状态))。 在非放大状态下,入射光的一部分透过放大器材料。 快门和选择放大器可以串联工作以形成“可编程层”。 提供了一种可编程技术,用于创建可被实现为可行的生产技术的要被成像到晶片上的图案。 因此,本发明还提供了制造集成电路的技术。 衍射限制器可以用于提供与接触光刻相关联的某些优点,而不需要接触光刻的一些缺点。

    Advanced exposure techniques for programmable lithography
    5.
    发明授权
    Advanced exposure techniques for programmable lithography 失效
    用于可编程光刻的高级曝光技术

    公开(公告)号:US07649615B2

    公开(公告)日:2010-01-19

    申请号:US11797351

    申请日:2007-05-02

    IPC分类号: G03B27/32 G03B27/42

    摘要: Advanced techniques for programmable photolithography provide enhanced resolution and can image features smaller than the single shutter intensity profile, i.e., sub-pixel resolution. Patterns are built up by multiple exposures with relative movement of the mask and resist so as to place each shape from the library where it is needed on the resist. Electro-Optic phase shifting material may be applied to the shutter so as to adjust the single shutter intensity profile, or to adjust the interaction of adjacent shutters. An apodizing mask may be used to engineer the wavefronts of the light striking the resist to achieve better resolution.

    摘要翻译: 用于可编程光刻技术的高级技术提供了增强的分辨率,并且可以对小于单个快门强度分布(即子像素分辨率)的图像进行成像。 图案通过掩模和抗蚀剂的相对运动的多次曝光来构建,以便将每个形状从库中需要在抗蚀剂上放置。 可以将电光相移材料施加到快门,以便调节单个快门强度分布,或调整相邻百叶窗的相互作用。 可以使用变迹面罩来设计抵达抗蚀剂的光的波前以实现更好的分辨率。

    Programmable photolithographic mask system and method
    8.
    发明授权
    Programmable photolithographic mask system and method 失效
    可编程光刻掩模系统及方法

    公开(公告)号:US06888616B2

    公开(公告)日:2005-05-03

    申请号:US10603092

    申请日:2003-06-25

    CPC分类号: G03F7/70375 G03F7/70291

    摘要: The present invention overcomes many of the disadvantages of prior lithographic microfabrication processes while providing further improvements that can significantly enhance the ability to make semiconductor chips at lower cost. A new type of programmable structure for exposing a wafer allows the lithographic pattern to be changed under electronic control. This provides great flexibility, increasing the throughput and decreasing the cost of chip manufacture and providing numerous other advantages. The programmable structure consists of an array of shutters that can be programmed to either transmit light to the wafer (referred to as its “open” state) or not transmit light to the wafer (referred to as its “closed” state). The programmable technique is provided for creating a pattern to be imaged onto a wafer that can be implemented as a viable production technique.

    摘要翻译: 本发明克服了现有的平版印刷微细加工工艺的许多缺点,同时提供了可以以更低成本显着提高半导体芯片制造能力的进一步改进。 用于曝光晶片的新型可编程结构允许在电子控制下改变光刻图案。 这提供了极大的灵活性,增加了生产量并且降低了芯片制造的成本并且提供了许多其他优点。 可编程结构由一组快门组成,可以被编程为将光传输到晶片(称为其“打开”状态)或不将光传输到晶片(称为其“关闭”状态))。 提供了可编程技术,用于创建要成像到晶片上的图案,其可以被实现为可行的生产技术。