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公开(公告)号：US20080176166A1
公开(公告)日：2008-07-24
申请号：US11774171
申请日：2007-07-06
CPC分类号： G03F7/20 , G03F7/0043 , G03F7/0047 , G03F7/2002 , G03F7/2022 , G03F7/2041 , G03F7/2053 , Y10T428/24479 , Y10T428/31504
摘要： New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.
摘要翻译： 本公开描述了涉及使用两步技术提供用于光刻的非线性抗蚀剂的多步可逆光化学反应的新途径。 它们可以根据光的强度二次提供曝光。 还描述了几个具体实例，包括但不限于使用纳米晶体。 结合双重图案化，这些方法可能产生亚衍射极限特征密度。
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公开(公告)号：US4996136A
公开(公告)日：1991-02-26
申请号：US316051
申请日：1989-02-24
IPC分类号： G03F7/039
CPC分类号： G03F7/039 , Y10S430/146
摘要： Sensitive deep ultraviolet resists are formed utilizing a material that undergoes decomposition to form an acid together with a polymer including a chain scission inducing monomer such as sulfonyl units and substituent that undergoes reaction to form an acidic moiety when subjected to the photogenerated species. An exemplary composition includes poly(t-butoxycarbonyloxystyrenesulfone) and 2,6-dinitrobenzyl-p-toluene sulfonate. The sulfonate decomposes to form sulfonic acid upon irradiation. This acid reacts with the polymer group to form an acid functionality while the sulfone moiety of the polymer induces scission. As a result, the irradiated portions of the resist material are soluble in ionic solvents while the unirradiated portions are not.
摘要翻译： 敏感的深紫外线抗蚀剂是利用经历分解形成酸的材料与含有断链诱导单体如磺酰基单元的聚合物形成的物质，并且当经受光生物质时经历反应以形成酸性部分的取代基。 示例性的组合物包括聚（叔丁氧基羰基氧基苯乙烯）和2,6-二硝基苄基对甲苯磺酸盐。 在辐照时磺酸盐分解形成磺酸。 该酸与聚合物基团反应以形成酸官能团，而聚合物的砜部分诱导断裂。 结果，抗蚀剂材料的照射部分可溶于离子溶剂，而未照射部分则不溶解。
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公开(公告)号：US4289845A
公开(公告)日：1981-09-15
申请号：US907873
申请日：1978-05-22
IPC分类号： H01L21/30 , G03F7/039 , H01L21/027 , G03C5/00
CPC分类号： G03F7/039 , Y10S430/143
摘要： A phase compatibile polymer blend serves as a radiation sensitive lithographic resist in the fabrication of circuits and circuit elements. Radiation sensitivity is due to inclusion of a "modifier". Resist properties, notably stability to agents and ambients to be masked are attributed largely to a second component, the "matrix polymer".In an exemplary embodiment in which the blend is positive acting, fabrication including dry processing is dependent upon use of a resist blend of a vapor developing polysulfone and a novolac. The novolac, inherently soluble in alkaline media is rendered insoluble in the blend. Radiation initiated depolymerization results in volatilization of the modifier to render the irradiated portions of the resist soluble in alkaline developers.Modifier may function in other manner; for example, it may undergo radiation initiated polymerization so as to insolubilize the blend in irradiated regions, so resulting in a negative acting resist.Effective isolation of lithographic from masking functions permits design of blends with high lithographic sensitivity, as well as good processing stability. The latter is sufficient to permit use in many dry processing procedures as practiced in direct writing, as well as in mask fabrication of large scale integrated silicon circuits.
摘要翻译： 相位相容性聚合物共混物在电路和电路元件的制造中用作辐射敏感的光刻抗蚀剂。 辐射敏感性是由于包含“改性剂”。 抵抗性能，特别是对待掩蔽的试剂和环境的稳定性主要归因于第二组分“基质聚合物”。 在其中共混物是正作用的示例性实施方案中，包括干法加工的制备取决于使用蒸气显影聚砜和酚醛清漆的抗蚀剂共混物。 固有溶于碱性介质的酚醛清漆在混合物中不溶。 辐射引发的解聚导致改性剂的挥发，使抗蚀剂的照射部分可溶于碱性显影剂。 修饰符可以以其他方式起作用; 例如，它可以进行辐射引发的聚合，以便在照射区域中使混合物不溶化，从而导致负性抗蚀剂。 平版印刷与掩蔽功能的有效隔离允许设计具有高光刻灵敏度的混合物以及良好的加工稳定性。 后者足以允许在直接写入中实施的许多干法处理程序中以及在大规模集成硅电路的掩模制造中使用。
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公开(公告)号：US4203792A
公开(公告)日：1980-05-20
申请号：US852504
申请日：1977-11-17
申请人： Larry F. Thompson
发明人： Larry F. Thompson
IPC分类号： B29C39/00 , C08F2/48 , C08J3/24 , H01L21/56 , H01L23/29 , H01L23/31 , H01L31/16 , B05D3/06 , B05D5/12
CPC分类号： H01L31/16 , B29C39/006 , C08J3/243 , H01L21/56 , H01L23/293 , H01L23/3135 , H01L2924/0002 , H01L2924/12044 , H01L2924/3025 , Y10S428/913
摘要： The disclosed device fabrication method makes use of a multicomponent polymer material comprising a mixture of radiation curable material and thermally curable material. The multicomponent polymer is dispensed onto a substrate and irradiated with actinic radiation. A heat cure is then performed. This method provides an initial gelling of the multicomponent polymer material so that the desired shape of the dispensed material may be retained while the heat cure is performed. This method has been applied successfully to a class of opto-electronic devices known as opto-isolators or optically coupled isolators.
摘要翻译： 所公开的器件制造方法使用包含可辐射固化材料和可热固化材料的混合物的多组分聚合物材料。 将多组分聚合物分配到基底上并用光化辐射照射。 然后进行热固化。 该方法提供多组分聚合物材料的初始凝胶化，使得在进行热固化时可以保留分配材料的期望形状。 该方法已成功应用于一类称为光隔离器或光耦合隔离器的光电器件。
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公开(公告)号：US08383316B2
公开(公告)日：2013-02-26
申请号：US11774171
申请日：2007-07-06
CPC分类号： G03F7/20 , G03F7/0043 , G03F7/0047 , G03F7/2002 , G03F7/2022 , G03F7/2041 , G03F7/2053 , Y10T428/24479 , Y10T428/31504
摘要： New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.
摘要翻译： 本公开描述了涉及使用两步技术提供用于光刻的非线性抗蚀剂的多步可逆光化学反应的新途径。 它们可以根据光的强度二次提供曝光。 还描述了几个具体实例，包括但不限于使用纳米晶体。 结合双重图案化，这些方法可能产生亚衍射极限特征密度。
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公开(公告)号：US4372834A
公开(公告)日：1983-02-08
申请号：US275426
申请日：1981-06-19
IPC分类号： C01B33/107 , C01G17/04 , B01J19/08
CPC分类号： C01G17/04 , C01B33/10778
摘要： Silicon tetrachloride is processed to ultrahigh purity by subjecting it to a specific succession of purification steps. These steps include the photochlorination of the SiCl.sub.4 using a reactor that allows a long residence time for the SiCl.sub.4. After photochlorination, highly volatile products such as HCl are removed and the remaining impurities are then separated by a distillation technique.
摘要翻译： 通过使四氯化硅进行特定的纯化步骤，将四氯化硅加工成超高纯度。 这些步骤包括使用允许SiCl 4的长停留时间的反应器对SiCl 4进行光氯化。 在光氯化后，除去高挥发性产物如HCl，然后通过蒸馏技术分离剩余的杂质。
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7.发明授权Fabrication based on radiation sensitive resists of halo-alkyl styrene polymers 失效基于卤代烷基苯乙烯聚合物的辐射敏感抗蚀剂的制备
公开(公告)号：US4262081A
公开(公告)日：1981-04-14
申请号：US96435
申请日：1979-11-21
CPC分类号： G03F7/038 , Y10S430/143 , Y10S430/167 , Y10S430/168
摘要： Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. Halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from aromatic and glycidyl methacrylate (GMA) comonomers, are suitable for direct processing of large-scale integrated circuits. While electron beam patterning is contemplated both for direct processing and mask making, radiation such as X-ray and deep u.v. may be used.
摘要翻译： 对于集成电路的干法处理具有必要稳定性的辐射敏感负性抗蚀剂由含有卤素原子的芳族部分聚合。 通常为碳质的卤素芳基桥接增加了对辐射的敏感性。 示例性材料，由芳族和甲基丙烯酸缩水甘油酯（GMA）共聚物制备的共聚物适用于大规模集成电路的直接处理。 虽然电子束图案被设想用于直接处理和掩模制作，但是诸如X射线和深紫外线的辐射。 可能用过了。
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公开(公告)号：US4913585A
公开(公告)日：1990-04-03
申请号：US287869
申请日：1988-12-21
申请人： Larry F. Thompson , Wayne A. Moore
发明人： Larry F. Thompson , Wayne A. Moore
CPC分类号： B09B1/00 , B01D21/0003 , B01D21/01 , B09B3/0025 , C02F1/54 , C02F11/008 , E21B21/063 , E21B41/005
摘要： Waste drilling mud is stabilized for earthern burial. The waste drilling mud may be treated by flocculating, aggregating, agglomerating and dewatering the waste drilling mud and separating out free water. The free water may be reused or disposed of in a disposal well. The thickened, dewatered drilling mud solids may be further treated with a water absorbing binder to produce a residue which has sufficient bearing strength to support an earthen overburden and may be disposed of by burial. Suitable flocculating, agglomerating and dewatering polyelectrolytes may be used, including polyacrylamides, quarternary amine polymers and mixtures thereof. The water absorbing binders may include inorganic and organic materials, such as natural and synthetic water absorbing gums, polymers and inorganic colloidal absorbers.
摘要翻译： 废钻井泥浆稳定为土地埋葬。 废钻井泥浆可以通过絮凝，聚集，聚集和脱水废钻井泥浆并分离出自由水来处理。 自由水可以在处置井中重复使用或处理。 增稠的脱水钻井泥浆固体可以用吸水粘合剂进一步处理，以产生具有足够的承载强度以支撑土层上覆层的残余物，并且可以通过埋葬进行处理。 可以使用合适的絮凝，聚集和脱水聚电解质，包括聚丙烯酰胺，季胺聚合物及其混合物。 吸水粘合剂可以包括无机和有机材料，例如天然和合成的吸水胶，聚合物和无机胶体吸收剂。
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9.发明授权Process using radiation curable epoxy containing resist and resultant product 失效使用含辐射固化型环氧树脂的抗蚀剂和所得产物的方法
公开(公告)号：US4130424A
公开(公告)日：1978-12-19
申请号：US812231
申请日：1977-07-01
申请人： Eugene D. Feit , Larry F. Thompson
发明人： Eugene D. Feit , Larry F. Thompson
IPC分类号： G03F7/038 , G03F7/039 , H01L21/027 , G03C1/71
CPC分类号： G03F7/038
摘要： Negative resist compositions are based on carbonaceous polymers with substituent branches containing epoxy groupings. Exemplary materials which include, for example, a copolymer of glycidyl methacrylate and ethyl acrylate in which epoxy groupings are unesterified show high sensitivity, for example, to electron radiation and to X-rays. Resolution is sufficient to permit expedient fabrication of detailed resist patterns for integrated circuits. High adherence permits use of acid or base reagents and thermal stability permits use of ion milling for circuit fabrication.
摘要翻译： 负型抗蚀剂组合物基于含有环氧基团的取代基支链的碳质聚合物。 包括例如环氧基团未酯化的甲基丙烯酸缩水甘油酯和丙烯酸乙酯的共聚物的示例性材料显示出例如电子辐射和X射线的高灵敏度。 分辨率足以允许为集成电路有利地制造详细的抗蚀剂图案。 高粘附性允许使用酸或碱试剂，热稳定性允许使用离子铣削进行电路制造。
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公开(公告)号：US4208211A
公开(公告)日：1980-06-17
申请号：US908791
申请日：1978-05-23
IPC分类号： G03F7/20 , C08F12/00 , C08F20/00 , C08F20/32 , G03C5/08 , G03F7/004 , G03F7/038 , H01L21/027 , G03C5/00
CPC分类号： G03F7/038
摘要： Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. Halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from aromatic and glycidyl methacrylate (GMA) comonomers, are suitable for direct processing of large-scale integrated circuits. While electron beam patterning is contemplated both for direct processing and mask making, radiation such as X-ray and deep u.v. may be used.
摘要翻译： 对于集成电路的干法处理具有必要稳定性的辐射敏感负性抗蚀剂由含有卤素原子的芳族部分聚合。 通常为碳质的卤素芳基桥接增加了对辐射的敏感性。 示例性材料，由芳族和甲基丙烯酸缩水甘油酯（GMA）共聚物制备的共聚物适用于大规模集成电路的直接处理。 虽然电子束图案被设想用于直接处理和掩模制作，但是诸如X射线和深紫外线的辐射。 可能用过了。
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