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公开(公告)号：US20150380688A1
公开(公告)日：2015-12-31
申请号：US14120419
申请日：2013-07-08
申请人： Zhiyun Chen , Gregory D. Cooper
发明人： Zhiyun Chen , Gregory D. Cooper
CPC分类号： H01L51/5275 , H01L27/3211 , H01L27/3244
摘要： Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.
摘要翻译： 描述了半导体纳米晶体及其在溶剂和其它介质中的分散体的制备。 本文所述的纳米晶体具有小（1-10nm）的粒度，具有最小的聚集，并且可以高产率合成。 在合成后的纳米晶体上的封端剂以及经历了帽交换反应的纳米晶体导致在极性和非极性溶剂中形成稳定的悬浮液，这可能导致形成高质量的纳米复合膜。
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公开(公告)号：US08666249B2
公开(公告)日：2014-03-04
申请号：US13098005
申请日：2011-04-29
申请人： Huiyu Zhou , Teng Ma , Kun Huang , Zhiyun Chen
发明人： Huiyu Zhou , Teng Ma , Kun Huang , Zhiyun Chen
IPC分类号： H04J14/00
CPC分类号： H04B10/27 , H04B10/272 , H04B10/29 , H04J3/1694
摘要： A method, device and system for implementing a long reach passive optical network (LR-PON) are provided, which solve the problem that the cost for establishing an LR-PON system is high. The method includes: receiving an uplink burst packet transmitted by an optical network unit (ONU) in a burst manner (101), converting a burst optical signal of the uplink burst packet into a continuous optical signal, and transmitting the continuous optical signal to a receiving device (105). The present invention is applicable to an LR-PON.
摘要翻译： 提供了实现长距离无源光网络（LR-PON）的方法，设备和系统，解决了建立LR-PON系统的成本高的问题。 该方法包括：以突发方式（101）接收由光网络单元（ONU）发送的上行链路突发分组，将上行链路突发分组的突发光信号转换为连续光信号，并将连续光信号发送到 接收设备（105）。 本发明可应用于LR-PON。
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公开(公告)号：US08383316B2
公开(公告)日：2013-02-26
申请号：US11774171
申请日：2007-07-06
CPC分类号： G03F7/20 , G03F7/0043 , G03F7/0047 , G03F7/2002 , G03F7/2022 , G03F7/2041 , G03F7/2053 , Y10T428/24479 , Y10T428/31504
摘要： New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.
摘要翻译： 本公开描述了涉及使用两步技术提供用于光刻的非线性抗蚀剂的多步可逆光化学反应的新途径。 它们可以根据光的强度二次提供曝光。 还描述了几个具体实例，包括但不限于使用纳米晶体。 结合双重图案化，这些方法可能产生亚衍射极限特征密度。
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4.发明申请公开(公告)号：US20110056841A1
公开(公告)日：2011-03-10
申请号：US12878272
申请日：2010-09-09
CPC分类号： C25B1/003 , H01M14/005 , Y02P20/134 , Y02P20/135
摘要： Semiconductor nano-sized particles possess unique properties, which make them ideal candidates for applications in solar electrochemical cells to produce chemical energy from solar energy. Coupled nanocrystal photoelectrochemical cells and several applications improve the efficiency of solar to chemical energy conversion.
摘要翻译： 半导体纳米尺寸颗粒具有独特的性能，使其成为太阳能电化学电池应用从太阳能产生化学能的理想选择。 耦合的纳米晶体光电池和几个应用提高了太阳能到化学能转换的效率。
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5.发明申请REVERSIBLE PHOTO BLEACHABLE MATERIALS BASED ON NANO SIZED SEMICONDUCTOR PARTICLES AND THEIR OPTICAL APPLICATIONS 审中-公开基于纳米尺寸半导体颗粒和其光学应用的可逆照相漂白材料公开(公告)号：US20090220756A1
公开(公告)日：2009-09-03
申请号：US12404472
申请日：2009-03-16
申请人： Zhiyun Chen , Erin F. Fleet , Serpil Gonen , Gregory D. Cooper
发明人： Zhiyun Chen , Erin F. Fleet , Serpil Gonen , Gregory D. Cooper
CPC分类号： G03F7/70383 , B82Y20/00 , G02F1/0126 , G02F1/015 , G02F1/01716 , G02F2202/36 , G02F2203/12 , G03F7/70291 , Y10S430/146 , Y10S977/932 , Y10T428/24802 , Y10T428/24893
摘要： Semiconductor nano-particles, due to their specific physical properties, can be used as reversible photo-bleachable materials for a wide spectrum, from far infrared to deep UV. Applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.
摘要翻译： 由于其特定的物理特性，半导体纳米颗粒可用作从远红外线到深紫外线的广泛光可逆漂白材料。 应用包括光学光刻中的可逆对比度增强层（R-CEL），光刻掩模检查和写入以及光学存储技术。
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公开(公告)号：US07524616B2
公开(公告)日：2009-04-28
申请号：US10792377
申请日：2004-03-04
申请人： Zhiyun Chen , Erin F. Fleet , Gregory Cooper
发明人： Zhiyun Chen , Erin F. Fleet , Gregory Cooper
CPC分类号： G03F7/2041 , B82Y30/00 , G03F1/62 , G03F7/004 , G03F7/091 , G03F7/2002
摘要： Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
摘要翻译： 半导体纳米尺寸颗粒具有独特的光学性质，使其成为UV光刻技术中各种应用的理想选择。 在该专利中，描述了包括在浸没式光刻中使用半导体纳米尺寸颗粒或含半导体纳米尺寸颗粒的材料作为高折射介质的几种这样的应用，作为光学中的抗反射涂层，光刻中的防护薄膜和UV光致抗蚀剂中的敏化剂 。
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公开(公告)号：US09207538B2
公开(公告)日：2015-12-08
申请号：US13189143
申请日：2011-07-22
申请人： Zhiyun Chen , Erin F. Fleet , Gregory D. Cooper
发明人： Zhiyun Chen , Erin F. Fleet , Gregory D. Cooper
CPC分类号： G03F7/2041 , B82Y30/00 , G03F1/62 , G03F7/004 , G03F7/091 , G03F7/2002
摘要： Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
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公开(公告)号：US20110315914A1
公开(公告)日：2011-12-29
申请号：US13172216
申请日：2011-06-29
IPC分类号： H01F1/06 , C09K5/00 , C08L63/00 , C08L33/08 , C08L75/04 , C03C14/00 , C08L67/02 , C08L77/00 , C08L69/00 , C08L79/08 , C09D7/12 , C09K3/00 , C08L75/02
CPC分类号： H01B3/30 , C08K3/013 , C08K3/04 , C08K3/041 , C08K3/042 , C08K3/08 , C08K3/22 , C08K3/28 , C08L33/08 , C08L63/00 , C09D5/24 , C09D7/61 , C09D7/68 , H01F1/06
摘要： A nanocomposite with high dielectric constant includes both ferroelectric with non-ferroelectric fillers. This may improve, not only the dielectric constant of the nanocomposite but also provide additional thermal, electrical, optical, mechanical, or chemical properties to the nanocomposite for specific applications.
摘要翻译： 具有高介电常数的纳米复合材料包括铁电与非铁电填料。 这不仅可以改善纳米复合材料的介电常数，而且可以为纳米复合材料为特定应用提供额外的热，电，光学，机械或化学性质。
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9.发明申请公开(公告)号：US20110281221A1
公开(公告)日：2011-11-17
申请号：US13189143
申请日：2011-07-22
申请人： Zhiyun Chen , Erin F. Fleet , Gregory D. Cooper
发明人： Zhiyun Chen , Erin F. Fleet , Gregory D. Cooper
CPC分类号： G03F7/2041 , B82Y30/00 , G03F1/62 , G03F7/004 , G03F7/091 , G03F7/2002
摘要： Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
摘要翻译： 半导体纳米尺寸颗粒具有独特的光学性质，使其成为UV光刻技术中各种应用的理想选择。 在该专利中，描述了包括在浸没式光刻中使用半导体纳米尺寸颗粒或含半导体纳米尺寸颗粒的材料作为高折射介质的几种这样的应用，作为光学中的抗反射涂层，光刻中的防护薄膜和在UV光致抗蚀剂中的敏化剂 。
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公开(公告)号：US20090081594A1
公开(公告)日：2009-03-26
申请号：US10792377
申请日：2004-03-04
申请人： Zhiyun Chen , Erin F. Fleet , Gregory Cooper
发明人： Zhiyun Chen , Erin F. Fleet , Gregory Cooper
CPC分类号： G03F7/2041 , B82Y30/00 , G03F1/62 , G03F7/004 , G03F7/091 , G03F7/2002
摘要： Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.
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