公开(公告)号：US11923326B2

公开(公告)日：2024-03-05

申请号：US17875291

申请日：2022-07-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Ching-Yu Chang ,  Ming-Da Cheng ,  Ming-Hui Weng

IPC分类号： H01L23/00 ,  C08G73/10

CPC分类号： H01L24/05 ,  C08G73/1078 ,  C08G73/1085 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02251 ,  H01L2224/0226 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05176 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13026 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13149 ,  H01L2224/13155 ,  H01L2224/1316 ,  H01L2224/13166 ,  H01L2224/13171 ,  H01L2224/13179 ,  H01L2224/1318 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/07025

摘要： A method of manufacturing a bump structure includes forming a passivation layer over a substrate. A metal pad structure is formed over the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer including a polyimide is formed over the passivation layer and the metal pad structure. A metal bump is formed over the metal pad structure and the polyimide layer. The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.

公开(公告)号：US09941140B2

公开(公告)日：2018-04-10

申请号：US15437193

申请日：2017-02-20

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yu-Feng Chen ,  Kai-Chiang Wu ,  Chun-Lin Lu ,  Hung-Jui Kou

IPC分类号： H01L21/3205 ,  H01L23/00 ,  H01L23/544 ,  H01L21/78 ,  H01L21/3213 ,  H01L23/433 ,  H01L21/283 ,  H01L21/34

CPC分类号： H01L21/3205 ,  H01L21/283 ,  H01L21/3213 ,  H01L21/34 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/10 ,  H01L23/147 ,  H01L23/16 ,  H01L23/28 ,  H01L23/31 ,  H01L23/3157 ,  H01L23/4334 ,  H01L23/481 ,  H01L23/49805 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/544 ,  H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2021/6024 ,  H01L2223/5446 ,  H01L2224/02235 ,  H01L2224/02255 ,  H01L2224/0226 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03622 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/11318 ,  H01L2224/13026 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17505 ,  H01L2224/17517 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81139 ,  H01L2224/92124 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/06 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/2064 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00

摘要： Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a substrate, and a plurality of contact pads disposed over the substrate. The contact pads may be arranged in a ball grid array (BGA), and the may include a plurality of corners. A metal dam is disposed around each of the plurality of corners, such as corners of the BGA.

公开(公告)号：US20170186681A1

公开(公告)日：2017-06-29

申请号：US15459648

申请日：2017-03-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo Lung Pan ,  Yu-Feng Chen ,  Chen-Shien Chen

IPC分类号： H01L23/498 ,  H01L25/00 ,  H01L25/065 ,  H01L21/56 ,  H01L21/48

CPC分类号： H01L23/49838 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/563 ,  H01L23/147 ,  H01L23/3157 ,  H01L23/49827 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/5384 ,  H01L24/05 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/02245 ,  H01L2224/02251 ,  H01L2224/0226 ,  H01L2224/10175 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13687 ,  H01L2224/1411 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/26145 ,  H01L2224/26175 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81007 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81805 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/01029 ,  H01L2924/05042 ,  H01L2924/0541 ,  H01L2924/014 ,  H01L2924/00014

摘要： An example method includes providing a packaging device includes a substrate having an integrated circuit die mounting region. A plurality of microstructures, each including an outer insulating layer over a conductive material, are disposed proximate a side of the integrated circuit die mounting region. An underfill material is disposed between the substrate and the integrated circuit die, the microstructures preventing spread of the underfill. In another example method, a via can be formed in a substrate and the substrate etched to form a bump or pillar from the via. An insulating material can be formed over the bump or pillar. In another example method, a photoresist deposited over a seed layer and patterned to form openings. A conductive material is plated in the openings, forming a plurality of pillars or bumps. The photoresist and exposed seed layer are removed. The conductive material is oxidized to form an insulating material.

公开(公告)号：US09536811B2

公开(公告)日：2017-01-03

申请号：US14604503

申请日：2015-01-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chung-Shi Liu ,  Chen-Hua Yu

IPC分类号： H01L23/485 ,  H01L23/498 ,  H01L23/482 ,  H01L23/48 ,  H01L23/00 ,  H01L23/532

CPC分类号： H01L23/528 ,  H01L23/48 ,  H01L23/481 ,  H01L23/482 ,  H01L23/4824 ,  H01L23/485 ,  H01L23/49811 ,  H01L23/49838 ,  H01L23/52 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/5329 ,  H01L24/05 ,  H01L24/10 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0225 ,  H01L2224/0226 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13018 ,  H01L2224/13026 ,  H01L2224/13082 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/19041 ,  H01L2924/35121 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/013

摘要： A system and method for forming a semiconductor die contact structure is disclosed. An embodiment comprises a top level metal contact, such as copper, with a thickness large enough to act as a buffer for underlying low-k, extremely low-k, or ultra low-k dielectric layers. A contact pad or post-passivation interconnect may be formed over the top level metal contact, and a copper pillar or solder bump may be formed to be in electrical connection with the top level metal contact.

摘要翻译： 公开了一种用于形成半导体管芯接触结构的系统和方法。 一个实施例包括顶层金属接触，例如铜，其厚度足够大以充当底层低k，极低k或超低k电介质层的缓冲器。 可以在顶层金属接触件上方形成接触焊盘或后钝化互连，并且可以形成铜柱或焊料凸块以与顶层金属接触件电连接。

公开(公告)号：US09368458B2

公开(公告)日：2016-06-14

申请号：US13938821

申请日：2013-07-10

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Wei Wu ,  Szu Wei Lu ,  Jing-Cheng Lin

IPC分类号： H01L23/58 ,  H01L23/498 ,  H01L23/00 ,  H01L23/16 ,  H01L23/544 ,  H01L23/10 ,  H01L25/065 ,  H01L25/00 ,  H01L21/56 ,  H01L23/48 ,  H01L23/14 ,  H01L21/48 ,  H01L21/768

CPC分类号： H01L21/3205 ,  H01L21/283 ,  H01L21/3213 ,  H01L21/34 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/10 ,  H01L23/147 ,  H01L23/16 ,  H01L23/28 ,  H01L23/31 ,  H01L23/3157 ,  H01L23/4334 ,  H01L23/481 ,  H01L23/49805 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/544 ,  H01L23/562 ,  H01L23/564 ,  H01L23/585 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/94 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2021/6024 ,  H01L2223/5446 ,  H01L2224/02235 ,  H01L2224/02255 ,  H01L2224/0226 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/03622 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/11318 ,  H01L2224/13026 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17505 ,  H01L2224/17517 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81139 ,  H01L2224/92124 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/06 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/2064 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00

摘要： A semiconductor package includes an interposer chip having a frontside, a backside, and a corner area on the backside defined by a first corner edge and a second corner edge of the interposer chip. A die is bonded to the frontside of the interposer chip. At least one dam structure is formed on the corner area of the backside of the interposer chip. The dam structure includes an edge aligned to at least one the first corner edge and the second corner edge of the interposer chip.

摘要翻译： 半导体封装包括具有前侧，后侧和背面上的角部区域的插入器芯片，其由插入器芯片的第一角边缘和第二拐角边缘限定。 芯片结合到插入器芯片的前侧。 在插入器芯片的背面的拐角区域上形成至少一个坝结构。 坝结构包括与插入器芯片的第一角边缘和第二拐角边缘中的至少一个对准的边缘。

公开(公告)号：US20150311165A1

公开(公告)日：2015-10-29

申请号：US14795955

申请日：2015-07-10

申请人： ROHM CO., LTD.

发明人： Osamu MIYATA ,  Masaki KASAI ,  Shingo HIGUCHI

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/528 ,  H01L23/29

CPC分类号： H01L23/3178 ,  H01L21/78 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/528 ,  H01L23/544 ,  H01L23/562 ,  H01L24/02 ,  H01L24/05 ,  H01L24/10 ,  H01L24/13 ,  H01L24/94 ,  H01L24/96 ,  H01L2223/5446 ,  H01L2224/02255 ,  H01L2224/0226 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.

公开(公告)号：US09070653B2

公开(公告)日：2015-06-30

申请号：US13741743

申请日：2013-01-15

申请人： Freescale Semiconductor, Inc.

发明人： Tab A. Stephens ,  Michael B. McShane ,  Perry H. Pelley

IPC分类号： H01L23/34 ,  H01L25/04 ,  H01L23/48 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/367

CPC分类号： H01L25/50 ,  H01L21/3212 ,  H01L21/32133 ,  H01L21/76898 ,  H01L23/3178 ,  H01L23/34 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/481 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/92 ,  H01L25/04 ,  H01L25/0657 ,  H01L2224/0225 ,  H01L2224/0226 ,  H01L2224/0401 ,  H01L2224/10122 ,  H01L2224/11334 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/16113 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16245 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2924/01029 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/06 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/014 ,  H01L2924/00

摘要： A microelectronic assembly (100) and a microelectronic device (4100) include a stacked structure (101). The stacked structure includes a heat spreader (104), at least one die (106) thermally coupled to at least a portion of one side of the heat spreader, at least one other die (108) thermal coupled to at least a portion of an opposite side of the heat spreader, at least one opening (401) in the heat spreader located in a region of between the two die, an insulator (603) disposed in the at least one opening, and electrically conductive material (1308, 1406) in an insulated hole (705) in the insulator. The heat spreader allows electrical communication between the two die through the opening while the insulator isolates the electrically conductive material and the heat spreader from each other.

摘要翻译： 微电子组件（100）和微电子器件（4100）包括堆叠结构（101）。 堆叠结构包括散热器（104），至少一个模具（106），其热耦合到散热器的一侧的至少一部分，至少一个另外的模具（108）热耦合到至少一部分 散热器的相对侧，位于两个模具之间的区域中的散热器中的至少一个开口（401），设置在至少一个开口中的绝缘体（603）和导电材料（1308,1406） 在绝缘体中的绝缘孔（705）中。 散热器允许通过开口的两个模具之间的电连通，而绝缘体将导电材料和散热器彼此隔离。

公开(公告)号：US20140291845A1

公开(公告)日：2014-10-02

申请号：US14306327

申请日：2014-06-17

申请人： ROHM CO., LTD.

发明人： Osamu MIYATA ,  Masaki KASAI ,  Shingo HIGUCHI

IPC分类号： H01L23/29

CPC分类号： H01L23/3178 ,  H01L21/78 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/528 ,  H01L23/544 ,  H01L23/562 ,  H01L24/02 ,  H01L24/05 ,  H01L24/10 ,  H01L24/13 ,  H01L24/94 ,  H01L24/96 ,  H01L2223/5446 ,  H01L2224/02255 ,  H01L2224/0226 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.

公开(公告)号：US20140077373A1

公开(公告)日：2014-03-20

申请号：US14059489

申请日：2013-10-22

申请人： ROHM CO., LTD.

发明人： Osamu MIYATA ,  Masaki KASAI ,  Shingo HIGUCHI

IPC分类号： H01L23/00 ,  H01L23/31

CPC分类号： H01L23/3178 ,  H01L21/78 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3142 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/528 ,  H01L23/544 ,  H01L23/562 ,  H01L24/02 ,  H01L24/05 ,  H01L24/10 ,  H01L24/13 ,  H01L24/94 ,  H01L24/96 ,  H01L2223/5446 ,  H01L2224/02255 ,  H01L2224/0226 ,  H01L2224/02377 ,  H01L2224/02381 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13124 ,  H01L2224/16 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/10161 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/182 ,  H01L2924/186 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An inventive semiconductor device includes a semiconductor chip having a passivation film, and a sealing resin layer provided over the passivation film for sealing a front side of the semiconductor chip. The sealing resin layer extends to a side surface of the passivation film to cover the side surface.

摘要翻译： 本发明的半导体器件包括具有钝化膜的半导体芯片和设置在钝化膜上方的密封树脂层，用于密封半导体芯片的正面。 密封树脂层延伸到钝化膜的侧表面以覆盖侧表面。

公开(公告)号：US08198739B2

公开(公告)日：2012-06-12

申请号：US12836612

申请日：2010-08-13

申请人： How Lin ,  Frank Egitto ,  Voya Markovich

发明人： How Lin ,  Frank Egitto ,  Voya Markovich

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L23/3157 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/72 ,  H01L2224/0226 ,  H01L2224/02335 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73251 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/81901 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/16 ,  H01L2224/72

摘要： A method of forming a compressible contact structure on a semi-conductor chip which comprises bonding a compressible polymer layer to the chip's surface, forming a plurality of openings within the layer, depositing electrically conductive material within the openings to form electrical connections with the chip's contacts, forming a plurality of electrically conductive line elements on the polymer layer extending from a respective opening and each including an end portion, and forming a plurality of contact members each on a respective one of the line segment end portions. The compressible polymer layer allows the contact members to deflect toward (compress) the chip when the contact members are engaged by an external force or forces. A semi-conductor chip including such a compressible contact structure is also provided.

摘要翻译： 一种在半导体芯片上形成可压缩接触结构的方法，包括将可压缩的聚合物层粘合到芯片的表面，在该层内形成多个开口，在开口内沉积导电材料以形成与芯片的触点的电连接 在聚合物层上形成多个导电线元件，所述多个导电线元件从相应的开口延伸并且各自包括端部，并且在所述线段端部中的相应一个上形成多个接触元件。 当可接触构件通过外力或力接合时，可压缩聚合物层允许接触构件偏转（压缩）芯片。 还提供了包括这种可压缩接触结构的半导体芯片。