Methods and apparatus for cleaning semiconductor wafers

    公开(公告)号:US12062556B2

    公开(公告)日:2024-08-13

    申请号:US17051151

    申请日:2018-04-27

    摘要: Related to is a method for cleaning an in-process wafer. The method includes causing the in-process wafer to be rotated, causing function water to be applied to a surface of the rotated in-process wafer to generate a flowing function water film on the rotated in-process wafer, causing the surface of the in-process wafer to be cleaned by a sonic device for a first period, causing the sonic device to be lifted and/or rotation speed of the rotated in-process wafer to be accelerated to separate the sonic device from the flowing function water film, causing the function water to be applied to the surface of the rotated in-process wafer for a second period after separating the sonic device from the function water film, and causing the surface of the in-process wafer to be dried.

    COATER WITH AUTOMATIC CLEANING FUNCTION AND COATER AUTOMATIC CLEANING METHOD

    公开(公告)号:US20170248848A1

    公开(公告)日:2017-08-31

    申请号:US15511547

    申请日:2014-09-16

    IPC分类号: G03F7/16

    摘要: A coater with automatic cleaning function and a coater automatic cleaning method. The coater (100,200,300,400,500,600,700,800) includes a coater chamber (101,201,301,401,501,601,701,801) capable of being filled up with cleaning solution, a substrate chuck (102,202,302,402,502,602,702,802) holding and positioning a substrate (103,203,303,403,503,603,703,803), and at least one shroud (108,208,308,408,508) capable of moving up for preventing photoresist from splashing out of the coater chamber (101,201,301,401,501,601,701,801), or moving down and immersing into the cleaning solution for cleaning. The coater (100,200,300,400,500,600,700,800) automatic cleaning method includes the following steps: turning off a liquid outlet valve (118,218,318,418A,418B,518,532,618,718,818) of the coater (100,200,300,400,500,600,700,800); filling up a coater chamber (101,201,301,401,501,601,701,801) with cleaning solution; after photoresist in the coater chamber (101,201,301,401,501,601,701,801) being dissolved into the cleaning solution, turning on the liquid outlet valve (118,218,318,418A,418B,518,532,618,718,818) and draining the cleaning solution out of the coater chamber (101,201,301,401,501,601,701,801).

    METHOD AND APPARATUS FOR REMOVING PARTICLES OR PHOTORESIST ON SUBSTRATES

    公开(公告)号:US20230143401A1

    公开(公告)日:2023-05-11

    申请号:US17920665

    申请日:2020-04-21

    IPC分类号: H01L21/67

    CPC分类号: H01L21/6704 H01L21/67086

    摘要: Methods and an apparatus for removing particles or photoresist on substrates. In an embodiment, a method comprises the following steps: transferring one or more substrates into a DIO3 solution accommodated in a DIO3 bath; after the one or more substrates are processed in the DIO3 bath, taking the one or more substrates out from the DIO3 bath and transferring the one or more substrates into a SPM solution accommodated in a SPM bath; after the one or more substrates are processed in the SPM bath, taking the one or more substrates out from the SPM bath and rinsing the one or more substrates; and transferring the one or more substrates to one or more single chambers to perform single substrate cleaning and drying process. The method combines DIO3 and SPM in one cleaning sequence, which can remove particles or photoresist, especially remove photoresist treated by medium dose or high dose of ion implantation.

    METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS

    公开(公告)号:US20200335325A1

    公开(公告)日:2020-10-22

    申请号:US16092193

    申请日:2016-04-06

    摘要: A method for cleaning semiconductor substrate (1010,2010) without damaging patterned structure on the semiconductor substrate (1010,2010) using ultra/mega sonic device (1003,2003) comprises applying liquid into a space between a substrate (1010,2010) and an ultra/mega sonic device (1003,2003); setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device (1003,2003); before bubble cavitation in the liquid damaging patterned structure on the substrate (1010,2010), setting the ultra/mega sonic power supply at zero output;after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time τ1, or comparing the detected power off time with a preset time τ2, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ1, or the detected power off time is shorter than the preset time τ2, or the detected amplitude of any waveform is larger than the preset value, shut down the ultra/mega sonic power supply and send out an alarm signal.

    METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFER

    公开(公告)号:US20190273003A1

    公开(公告)日:2019-09-05

    申请号:US16377894

    申请日:2019-04-08

    IPC分类号: H01L21/67 H01L21/677

    摘要: A method and apparatus for cleaning semiconductor wafer, combining batch cleaning and single wafer cleaning together. The method includes: taking at least two wafers from a cassette in a load port and putting said wafers into a first tank filled with chemical solution; after processing said wafers in the first tank, taking said wafers out of the first tank and keeping said wafers wet; putting said wafers into a second tank filled with liquid; after processing said wafers in the second tank, taking said wafers out of the second tank and keeping said wafers wet; putting one of said wafers on a chuck inside a single wafer cleaning module; rotating the chuck while applying chemical solution on said wafer; applying deionized water on said wafer; drying said wafer; taking said wafer out of the single wafer cleaning module and putting said wafer back to the cassette in the load port.

    METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFER
    10.
    发明申请
    METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFER 审中-公开
    清洗半导体波形的方法和装置

    公开(公告)号:US20150332940A1

    公开(公告)日:2015-11-19

    申请号:US14647996

    申请日:2012-11-28

    IPC分类号: H01L21/67 H01L21/677

    摘要: A method and apparatus (100) for cleaning semiconductor wafer are provided, combining batch cleaning and single wafer cleaning together. The method includes the following steps: tacking at least two wafers from a cassette in a load port (110) and putting said wafers into a first tank (137) filled with chemical solution; after said wafers have been processed in the first tank (137), taking said wafers out of the first tank (137) and keeping said wafers in wet status; putting said wafers into a second tank (138) filled with liquid; after said wafers have been processed in the second tank (138), taking said wafers out of the second tank (138) and keeping said wafers in wet status; putting one of said wafers on a chuck inside a single wafer cleaning module (150); rotating the chuck while applying chemical solution on said wafer; applying deionized water on said wafer; drying said wafer; taking said wafer out of the single wafer cleaning module (150) and then putting said wafer back to the cassette in the load port (110).

    摘要翻译: 提供一种用于清洗半导体晶片的方法和装置(100),将批量清洗和单晶片清洗结合在一起。 该方法包括以下步骤:从装载端口(110)中的盒子中取出至少两个晶片,并将所述晶片放入填充有化学溶液的第一罐(137)中; 在所述第一罐(137)中处理所述晶片之后,将所述晶片从所述第一罐(137)中取出并保持所述晶片处于湿状态; 将所述晶片放入填充有液体的第二罐(138)中; 在所述第二罐(138)中处理所述晶片之后,将所述晶片从所述第二罐(138)中取出并将所述晶片保持在湿状态; 将一个所述晶片放置在单个晶片清洁模块(150)内的卡盘上; 在所述晶片上施加化学溶液时旋转卡盘; 在所述晶片上施加去离子水; 干燥所述晶片; 将所述晶片从所述单晶片清洁模块(150)中取出,然后将所述晶片放回所述装载端口(110)中的所述盒。