公开(公告)号：US11829065B2

公开(公告)日：2023-11-28

申请号：US18193674

申请日：2023-03-31

Applicant: AGC Inc.

Inventor： Shunya Taki ,  Hiroaki Iwaoka ,  Daijiro Akagi ,  Ichiro Ishikawa

IPC: G03F1/26 ,  G03F1/24 ,  G03F1/80 ,  G03F1/48

CPC classification number: G03F1/26 ,  G03F1/24 ,  G03F1/48 ,  G03F1/80

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of

0.625MP1+MP2≤1000.

公开(公告)号：US12246986B2

公开(公告)日：2025-03-11

申请号：US17580205

申请日：2022-01-20

Applicant: AGC Inc.

Inventor： Shunya Taki ,  Naoko Okada ,  Yasuyuki Takimoto ,  Haruhiko Yoshino

IPC: C03C17/36 ,  B32B17/10 ,  E06B3/67 ,  E06B9/24

Abstract: A laminated body includes a transparent substrate having a laminated film. The laminated film includes a dielectric layer containing silicon nitride, a barrier layer composed of a single film or two or more films, and a metal layer containing silver. The barrier layer has a thickness of from 0.1 nm to 10 nm. Each film of the barrier layer includes a material having a crystal structure of a face-centered cubic structure with a lattice constant of from 3.5 to 4.2, a hexagonal close-packed structure with a lattice constant of from 2.6 to 3.3, a body-centered cubic structure with a lattice constant of from 2.9 to 3.2, or a tetragonal crystal with a lattice constant of from 2.9 to 4.4. The metal layer has a thickness of from 7 nm to 25 nm. An orientation index P of the metal layer falls within a range from 4.5 to 20.

公开(公告)号：US12204240B2

公开(公告)日：2025-01-21

申请号：US18394787

申请日：2023-12-22

Applicant: AGC Inc.

Inventor： Daijiro Akagi ,  Shunya Taki ,  Takuma Kato ,  Ichiro Ishikawa ,  Kenichi Sasaki

IPC: G03F1/24 ,  G03F1/32 ,  G03F1/48 ,  G03F1/80

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

公开(公告)号：US11914284B2

公开(公告)日：2024-02-27

申请号：US18346563

申请日：2023-07-03

Applicant: AGC Inc.

Inventor： Daijiro Akagi ,  Shunya Taki ,  Takuma Kato ,  Ichiro Ishikawa ,  Kenichi Sasaki

IPC: G03F1/24 ,  G03F1/32 ,  G03F1/48 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/32 ,  G03F1/48 ,  G03F1/80

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

公开(公告)号：US12240204B2

公开(公告)日：2025-03-04

申请号：US17677634

申请日：2022-02-22

Applicant: AGC Inc.

Inventor： Shunya Taki ,  Naoko Okada

IPC: B32B15/04 ,  B32B17/06 ,  B32B17/10

Abstract: A laminate includes a transparent substrate having a first surface, and a laminated film provided on the first surface of the transparent substrate, wherein the laminated film includes, in a descending order of closeness to the first surface, a first dielectric layer including silicon nitride or zinc oxide or including silicon nitride and zinc oxide, a first layer including titanium oxide and provided on or above the first dielectric layer, a first barrier layer including nickel and chromium and provided on or above the first layer, and a silver-containing metal layer provided directly on the first barrier layer.

公开(公告)号：US12222640B2

公开(公告)日：2025-02-11

申请号：US18382269

申请日：2023-10-20

Applicant: AGC Inc.

Inventor： Shunya Taki ,  Hiroaki Iwaoka ,  Daijiro Akagi ,  Ichiro Ishikawa

IPC: G03F1/26 ,  G03F1/24 ,  G03F1/48 ,  G03F1/80

Abstract: A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1): 0.625MP1+MP2≤1000  (1).

公开(公告)号：US12032280B2

公开(公告)日：2024-07-09

申请号：US18544970

申请日：2023-12-19

Applicant: AGC INC.

Inventor： Hiroshi Hanekawa ,  Taiga Fudetani ,  Yusuke Ono ,  Shunya Taki

IPC: G03F1/24 ,  G03F1/26

CPC classification number: G03F1/24 ,  G03F1/26

Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.