公开(公告)号：US12235575B2

公开(公告)日：2025-02-25

申请号：US18439057

申请日：2024-02-12

Applicant: AGC INC.

Inventor： Yusuke Ono ,  Hiroshi Hanekawa ,  Hirotomo Kawahara

IPC: G03F1/24

Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

公开(公告)号：US12001133B2

公开(公告)日：2024-06-04

申请号：US18382356

申请日：2023-10-20

Applicant: AGC Inc.

Inventor： Takuma Kato ,  Daijiro Akagi ,  Takeshi Okato ,  Ryusuke Oishi ,  Yusuke Ono

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80

CPC classification number: G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

公开(公告)号：US20230350284A1

公开(公告)日：2023-11-02

申请号：US18219452

申请日：2023-07-07

Applicant: AGC INC.

Inventor： Yusuke Ono ,  Hiroshi Hanekawa ,  Hirotomo Kawahara

IPC: G03F1/24 ,  G03F7/00

CPC classification number: G03F1/24 ,  G03F7/70058

Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

公开(公告)号：US11934093B2

公开(公告)日：2024-03-19

申请号：US18219452

申请日：2023-07-07

Applicant: AGC INC.

Inventor： Yusuke Ono ,  Hiroshi Hanekawa ,  Hirotomo Kawahara

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

公开(公告)号：US12032280B2

公开(公告)日：2024-07-09

申请号：US18544970

申请日：2023-12-19

Applicant: AGC INC.

Inventor： Hiroshi Hanekawa ,  Taiga Fudetani ,  Yusuke Ono ,  Shunya Taki

IPC: G03F1/24 ,  G03F1/26

CPC classification number: G03F1/24 ,  G03F1/26

Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.

公开(公告)号：US20250147406A1

公开(公告)日：2025-05-08

申请号：US19013635

申请日：2025-01-08

Applicant: AGC INC.

Inventor： Yusuke Ono ,  Hiroshi Hanekawa ,  Hirotomo Kawahara

IPC: G03F1/24

Abstract: A reflective mask blank for EUV lithography, including: a substrate; a conductive film on or above a back surface of the substrate; a reflective layer that reflects EUV light and is on or above a front surface of the substrate; and an absorption layer that absorbs the EUV light and is on or above the reflective layer, where the conductive film has a light transmittance at a wavelength of 1000 nm to 1100 nm of 2.0% or more, a light transmittance at a wavelength of 600 nm to 700 nm of 1.0% or more, and a light transmittance at a wavelength of 400 nm to 500 nm of less than 1.0%.