公开(公告)号：US20250147407A1

公开(公告)日：2025-05-08

申请号：US19013708

申请日：2025-01-08

Applicant: AGC Inc.

Inventor： Hiroaki ITO ,  Daijiro Akagi ,  Taiga Fudetani

IPC: G03F1/24 ,  G03F1/40 ,  G03F1/48 ,  G03F1/58

Abstract: Provided is a reflective mask blank that is small in processing error in charged particle beam processing. A reflective mask blank (10a) includes a substrate (11), a multilayer reflective film (12) for reflecting EUV light, a protective film (13) and an absorber film (14) having a single-layer structure or a multilayer structure, wherein: any layer between the protective film (13) and the outermost layer located on the outermost side of the reflective mask blank (10a) opposite from the substrate (11) is an insulating layer having a sheet resistance of 1.0×103 Ω/sq. or higher; and an internal electrical resistance between a surface of the outermost layer opposite from the substrate (11) and the protective film (13) is 100 kΩ or lower.

公开(公告)号：US12032280B2

公开(公告)日：2024-07-09

申请号：US18544970

申请日：2023-12-19

Applicant: AGC INC.

Inventor： Hiroshi Hanekawa ,  Taiga Fudetani ,  Yusuke Ono ,  Shunya Taki

IPC: G03F1/24 ,  G03F1/26

CPC classification number: G03F1/24 ,  G03F1/26

Abstract: A reflective mask blank includes: a substrate; a multilayer reflective film configured to reflect EUV light; a protective film; and a phase shift film configured to shift a phase of EUV light, in this order, in which the phase shift film includes a first layer including one or more first elements selected from a group consisting of ruthenium, rhenium, iridium, silver, osmium, gold, palladium, and platinum, and a second layer including one or more second elements selected from a group consisting of tantalum and chromium, the first layer includes a region A1 in which a content of an element having a highest content among the one or more first elements increases in a thickness direction from a side opposite to the second layer toward the second layer, and the region A1 is present adjacent to the second layer.