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    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY
    2.
    发明申请
    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY 有权

    公开(公告)号：US20220075256A1

    公开(公告)日：2022-03-10

    申请号：US17529124

    申请日：2021-11-17

    Applicant: AGC Inc.

    Inventor： Hirotomo KAWAHARA ,  Hiroshi HANEKAWA ,  Toshiyuki UNO ,  Masafumi AKITA

    IPC: G03F1/24 ,  G03F1/52 ,  H01L21/027 ,  H01L21/033

    Abstract: A reflective mask blank for EUV lithography includes a substrate and, formed on or above the substrate in the following order, a reflective layer for reflecting EUV light, a protective layer for the reflective layer, an absorption layer for absorbing EUV light, and a hard mask layer. The protective layer contains ruthenium (Ru), the absorption layer contains tantalum (Ta), the hard mask layer contains chromium (Cr) and at least one of nitrogen (N) and oxygen (O), and the hard mask layer has a film density of from 3.00 g/cm3 to 5.40 g/cm3.

    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY
    5.
    发明申请
    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY 有权

    公开(公告)号：US20210325772A1

    公开(公告)日：2021-10-21

    申请号：US17235220

    申请日：2021-04-20

    Applicant: AGC Inc.

    Inventor： Hirotomo KAWAHARA ,  Hiroyoshi TANABE ,  Toshiyuki UNO ,  Hiroshi HANEKAWA ,  Daijiro AKAGI

    IPC: G03F1/24

    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.

    REFLECTIVE MASK BLANK AND REFLECTIVE MASK
    6.
    发明申请
    REFLECTIVE MASK BLANK AND REFLECTIVE MASK 审中-公开

    公开(公告)号：US20190056653A1

    公开(公告)日：2019-02-21

    申请号：US16056765

    申请日：2018-08-07

    Applicant: AGC INC.

    Inventor： Hirotomo KAWAHARA ,  Hiroshi HANEKAWA ,  Toshiyuki UNO

    IPC: G03F1/40 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/24

    Abstract: A reflective mask blank includes a backside conductive film on a back surface of a substrate. The backside conductive film has a laminated structure including a stress compensation layer and a conductive layer in this order from the substrate side. The conductive layer includes a metal nitride. The stress compensation layer has a compressive stress and the stress compensation layer includes at least one compound selected from the group consisting of oxides, oxynitrides, and nitrides, each having an absorption coefficient (k) over the wavelength range of 400 nm to 800 nm being 0.1 or less. The conductive layer has a thickness of 5 nm or more and 30 nm or less. The backside conductive film has a total thickness of 50 nm or more.

    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY
    9.
    发明公开
    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY 审中-公开

    公开(公告)号：US20230305383A1

    公开(公告)日：2023-09-28

    申请号：US18201705

    申请日：2023-05-24

    Applicant: AGC Inc.

    Inventor： Hirotomo KAWAHARA ,  Hiroyoshi TANABE ,  Toshiyuki UNO ,  Hiroshi HANEKAWA ,  Daijiro AKAGI

    IPC: G03F1/24

    CPC classification number: G03F1/24

    Abstract: A reflective mask blank for EUV lithography includes a substrate, a reflective layer for reflecting EUV light, and an absorption layer for absorbing EUV light. The reflective layer and the absorption layer are formed on or above the substrate in this order. The absorption layer contains tantalum (Ta) and niobium (Nb), and the absorption layer has a composition ratio Ta:Nb of Ta (at %) to Nb (at %) of from 4:1 to 1:4. Among diffraction peaks derived from the absorption layer observed at 2θ: from 20° to 50° by out-of-plane XRD method, a peak having the highest intensity has a half width FWHM of 1.0° or more.

    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND SUBSTRATE WITH CONDUCTIVE FILM
    10.
    发明公开
    REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY AND SUBSTRATE WITH CONDUCTIVE FILM 审中-公开

    公开(公告)号：US20240184191A1

    公开(公告)日：2024-06-06

    申请号：US18439057

    申请日：2024-02-12

    Applicant: AGC INC.

    Inventor： Yusuke ONO ,  Hiroshi HANEKAWA ,  Hirotomo KAWAHARA

    IPC: G03F1/24

    CPC classification number: G03F1/24

    Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film; a reflective layer; and an absorption layer, the absorption layer absorbing the EUV light, wherein the conductive film has a refractive index nλ1000-1100 nm of 5.300 or less and has an extinction coefficient kλ1000-1100 nm of 5.200 or less, at a wavelength of 1000 nm to 1100 nm, the conductive film has a refractive index nλ600-700 nm of 4.300 or less and has an extinction coefficient kλ600-700 nm of 4.500 or less, at a wavelength of 600 nm to 700 nm, the conductive film has a refractive index nλ400-500 nm of 2.500 or more and has an extinction coefficient kλ400-500 nm of 0.440 or more, at a wavelength of 400 nm to 500 nm, and the conductive film has a film thickness t of 40 nm to 350 nm.

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