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公开(公告)号：US20230251564A1
公开(公告)日：2023-08-10
申请号：US18193674
申请日：2023-03-31
Applicant: AGC Inc.
Inventor： Shunya TAKI , Hiroaki IWAOKA , Daijiro AKAGI , Ichiro ISHIKAWA
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; and a phase shift film that shifts a phase of the EUV light, in this order. The phase shift film contains a compound containing ruthenium (Ru) and an element X2 different from Ru. A melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy a relation of
0.625 MP1+MP2≤1000.-
公开(公告)号：US20240160096A1
公开(公告)日：2024-05-16
申请号：US18420846
申请日：2024-01-24
Applicant: AGC Inc.
Inventor： Yuya NAGATA , Daijiro AKAGI , Kenichi SASAKI , Hiroaki IWAOKA
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The substrate, the multilayer reflective film, the protection film, and the phase shift film are arranged in this order. The phase shift film is made of an Ir-based material containing Ir as a main component, and the protection film is made of a Rh-based material containing Rh as a main component.
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公开(公告)号：US20240152044A1
公开(公告)日：2024-05-09
申请号：US18411376
申请日：2024-01-12
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Hiroaki IWAOKA , Shunya TAKI , Kenichi SASAKI , Ichiro ISHIKAWA , Toshiyuki UNO
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a phase shift film that shifts a phase of the EUV light, in this order. An opening pattern is to be formed in the phase shift film. The phase shift film has a refractive index of 0.920 or less with respect to the EUV light, an extinction coefficient of 0.024 or more with respect to the EUV light, a thickness of 50 nm or less, a normalized image log slope of 2.9 or more for a transferred image when a line-and-space pattern is formed on a target substrate, and a tolerance range of a focal depth of the transferred image is 60 nm or less.
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公开(公告)号：US20250036020A1
公开(公告)日：2025-01-30
申请号：US18911231
申请日：2024-10-09
Applicant: AGC Inc.
Inventor： Wataru NISHIDA , Daijiro AKAGI , Hiroaki IWAOKA , Hiroshi HANEKAWA , Taiga FUDETANI , Masaru HORI , Takayoshi TSUTSUMI
Abstract: A reflective mask blank includes: a substrate, a multilayer reflective film including molybdenum layers and silicon layers alternately and being configured to reflect EUV light, an intermediate film, a protective film, and an absorber film, in this order, in which the intermediate film includes silicon and nitrogen, an atomic weight ratio of a content of the nitrogen to a content of the silicon is 0.22 to 0.40 or 0.15 or less, the protective film includes one or more layers selected from the group consisting of a layer including rhodium and a layer including a rhodium-containing material, and the rhodium-containing material includes rhodium and one or more elements selected from the group consisting of boron, carbon, nitrogen, oxygen, silicon, titanium, zirconium, niobium, molybdenum, ruthenium, palladium, tantalum, and iridium.
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公开(公告)号：US20240272541A1
公开(公告)日：2024-08-15
申请号：US18444020
申请日：2024-02-16
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Hiroaki IWAOKA , Wataru NISHIDA , Ichiro ISHIKAWA , Kenichi SASAKI
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition
k-
Patent Agency Ranking
公开(公告)号：US20250155792A1
公开(公告)日：2025-05-15
申请号：US19022508
申请日：2025-01-15
Applicant: AGC Inc.
Inventor： Yuya NAGATA , Daijiro AKAGI , Kenichi SASAKI , Hiroaki IWAOKA
Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light. The substrate, the multilayer reflective film, the protection film, and the phase shift film are arranged in this order. The phase shift film is made of an Ir-based material containing Ir as a main component, and the protection film is made of a Rh-based material containing Rh as a main component.
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公开(公告)号：US20240427227A1
公开(公告)日：2024-12-26
申请号：US18823099
申请日：2024-09-03
Applicant: AGC Inc.
Inventor： Daijiro AKAGI , Hiroaki IWAOKA , Wataru NISHIDA , Ichiro ISHIKAWA , Kenichi SASAKI
IPC: G03F1/24
Abstract: A reflective mask blank for EUV lithography includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light. The substrate, the multilayer reflective film, the protection film, and the absorption film are arranged in this order from bottom to top. The protection film includes an upper layer made of a rhodium-based material containing Rh as a main component that contains only Rh, or contains Rh and at least one element selected from a group consisting of N, O, C, B, Ru, Nb, Mo, Ta, Ir, Pd, Zr, and Ti; and a lower layer satisfying a condition k
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8.发明公开公开(公告)号：US20240210814A1
公开(公告)日：2024-06-27
申请号：US18596919
申请日：2024-03-06
Applicant: AGC INC.
Inventor： Hirotomo KAWAHARA , Daijiro AKAGI , Hiroaki IWAOKA , Toshiyuki UNO , Michinori SUEHARA , Keishi TSUKIYAMA
Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
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9.发明公开公开(公告)号：US20230324785A1
公开(公告)日：2023-10-12
申请号：US18198881
申请日：2023-05-18
Applicant: AGC INC.
Inventor： Hirotomo KAWAHARA , Daijiro AKAGI , Hiroaki IWAOKA , Toshiyuki UNO , Michinori SUEHARA , Keishi TSUKIYAMA
Abstract: The present invention relates to a reflective mask blank for EUV lithography, including: a substrate, a multilayer reflective film reflecting EUV light, and a phase shift film shifting a phase of the EUV light, in which the substrate, the multilayer reflective film, and the phase shift film are formed in this order, the phase shift film includes a layer 1 including ruthenium (Ru) and nitrogen (N), and the layer 1 has an absolute value of a film stress of 1,000 MPa or less.
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公开(公告)号：US20250076748A1
公开(公告)日：2025-03-06
申请号：US18948779
申请日：2024-11-15
Applicant: AGC Inc.
Inventor： Yusuke ONO , Hiroaki IWAOKA , Taiga FUDETANI
IPC: G03F1/24
Abstract: A reflective mask blank for EUV lithography, includes: a substrate; a conductive film disposed on or above a back surface of the substrate; a reflective layer disposed on or above a front surface of the substrate, the reflective layer reflecting EUV light; and an absorption layer disposed on or above the reflective layer, the absorption layer absorbing the EUV light.
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