公开(公告)号：US20130200327A1

公开(公告)日：2013-08-08

申请号：US13745993

申请日：2013-01-21

Applicant: Agency for Science, Technology and Research

Inventor： Xinpeng WANG ,  Xiang LI ,  Navab SINGH ,  Guo-Qiang Patrick LO

IPC: H01L45/00

CPC classification number: H01L45/04 ,  B82Y10/00 ,  B82Y40/00 ,  H01L27/2409 ,  H01L27/2454 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/16 ,  Y10S977/762 ,  Y10S977/943

Abstract: According to embodiments of the present invention, a resistive memory arrangement is provided. The resistive memory arrangement includes a nanowire, and a resistive memory cell including a resistive layer including a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire, and a conductive layer arranged on at least a part of the resistive layer. According to further embodiments of the present invention, a method of forming a resistive memory arrangement is also provided.

Abstract translation: 根据本发明的实施例，提供了一种电阻式存储装置。 电阻性存储器装置包括纳米线和包括电阻层的电阻性存储单元，该电阻层包括电阻变化材料，其中电阻层的至少一部分布置成覆盖纳米线表面的至少一部分，导电层 布置在电阻层的至少一部分上。 根据本发明的另外的实施例，还提供了形成电阻式存储装置的方法。

公开(公告)号：US20130270508A1

公开(公告)日：2013-10-17

申请号：US13860870

申请日：2013-04-11

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Xiang LI ,  Navab Singh ,  Zhixian Chen ,  Xinpeng Wang ,  Guo-Qiang Patrick Lo

IPC: H01L45/00

CPC classification number: H01L45/1206 ,  B82Y10/00 ,  H01L27/2454 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1675 ,  Y10S977/762 ,  Y10S977/84 ,  Y10S977/938

Abstract: According to embodiments of the present invention, a non-volatile memory device is provided. The non-volatile memory device includes a nanowire transistor including a nanowire channel, and a resistive memory cell arranged adjacent to the nanowire transistor and in alignment with a longitudinal axis of the nanowire channel. According to further embodiments of the present invention, a method of forming a non-volatile memory device is also provided.

Abstract translation: 根据本发明的实施例，提供了一种非易失性存储器件。 非易失性存储器件包括纳米线晶体管，其包括纳米线通道，以及与纳米线晶体管相邻并且与纳米线通道的纵向轴线对准布置的电阻存储器单元。 根据本发明的另外的实施例，还提供了一种形成非易失性存储器件的方法。