公开(公告)号：US20090093112A1

公开(公告)日：2009-04-09

申请号：US11869396

申请日：2007-10-09

申请人： AMIR AL-BAYATI ,  Alexandros T. Demos ,  Kang Sub Yim ,  Mehul Naik ,  Zhenjiang 'David' Cui ,  Mihaela Balseanu ,  Meiyee (Maggie Le) Shek ,  Li-Qun Xia

发明人： AMIR AL-BAYATI ,  Alexandros T. Demos ,  Kang Sub Yim ,  Mehul Naik ,  Zhenjiang 'David' Cui ,  Mihaela Balseanu ,  Meiyee (Maggie Le) Shek ,  Li-Qun Xia

IPC分类号： H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76825 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76885

摘要： A method and apparatus for generating air gaps in a dielectric material of an interconnect structure. One embodiment provides a method for forming a semiconductor structure comprising depositing a first dielectric layer on a substrate, forming trenches in the first dielectric layer, filling the trenches with a conductive material, planarizing the conductive material to expose the first dielectric layer, depositing a dielectric barrier film on the conductive material and exposed first dielectric layer, depositing a hard mask layer over the dielectric barrier film, forming a pattern in the dielectric barrier film and the hard mask layer to expose selected regions of the substrate, oxidizing at least a portion of the first dielectric layer in the selected region of the substrate, removing oxidized portion of the first dielectric layer to form reversed trenches around the conductive material, and forming air gaps in the reversed trenches while depositing a second dielectric material in the reversed trenches.

摘要翻译： 一种用于在互连结构的电介质材料中产生气隙的方法和装置。 一个实施例提供了一种用于形成半导体结构的方法，包括在衬底上沉积第一介电层，在第一介电层中形成沟槽，用导电材料填充沟槽，平坦化导电材料以暴露第一介电层， 在导电材料和暴露的第一电介质层上的阻挡膜，在介电阻挡膜上沉积硬掩模层，在介电阻挡膜和硬掩模层中形成图案，以暴露衬底的选定区域，氧化至少一部分 在衬底的选定区域中的第一介电层，去除第一电介质层的氧化部分以在导电材料周围形成反向沟槽，以及在反向沟槽中形成气隙，同时在反向沟槽中沉积第二电介质材料。

公开(公告)号：US20110104891A1

公开(公告)日：2011-05-05

申请号：US12986809

申请日：2011-01-07

申请人： AMIR AL-BAYATI ,  Alexandros T. Demos ,  Kang Sub Yim ,  Mehul Naik ,  Zhenjiang David Cui ,  Mihaela Balseanu ,  Meiyee Maggie Le Shek ,  Li-Qun Xia

发明人： AMIR AL-BAYATI ,  Alexandros T. Demos ,  Kang Sub Yim ,  Mehul Naik ,  Zhenjiang David Cui ,  Mihaela Balseanu ,  Meiyee Maggie Le Shek ,  Li-Qun Xia

IPC分类号： H01L21/768

CPC分类号： H01L21/7682 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/76825 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76885

摘要： A method and apparatus for generating air gaps in a dielectric material of an interconnect structure. One embodiment provides a method for forming a semiconductor structure comprising depositing a first dielectric layer on a substrate, forming trenches in the first dielectric layer, filling the trenches with a conductive material, planarizing the conductive material to expose the first dielectric layer, depositing a dielectric barrier film on the conductive material and exposed first dielectric layer, depositing a hard mask layer over the dielectric barrier film, forming a pattern in the dielectric barrier film and the hard mask layer to expose selected regions of the substrate, oxidizing at least a portion of the first dielectric layer in the selected region of the substrate, removing oxidized portion of the first dielectric layer to form reversed trenches around the conductive material, and forming air gaps in the reversed trenches while depositing a second dielectric material in the reversed trenches.

摘要翻译： 一种用于在互连结构的电介质材料中产生气隙的方法和装置。 一个实施例提供了一种用于形成半导体结构的方法，包括在衬底上沉积第一介电层，在第一介电层中形成沟槽，用导电材料填充沟槽，平坦化导电材料以暴露第一介电层， 在导电材料和暴露的第一电介质层上的阻挡膜，在介电阻挡膜上沉积硬掩模层，在介电阻挡膜和硬掩模层中形成图案，以暴露衬底的选定区域，氧化至少一部分 在衬底的选定区域中的第一介电层，去除第一电介质层的氧化部分以在导电材料周围形成反向沟槽，以及在反向沟槽中形成气隙，同时在反向沟槽中沉积第二电介质材料。

公开(公告)号：US20110092077A1

公开(公告)日：2011-04-21

申请号：US12975833

申请日：2010-12-22

申请人： HUIWEN XU ,  MEI-YEE SHEK ,  LI-QUN XIA ,  AMIR AL-BAYATI ,  DEREK WITTY ,  HICHEM M'SAAD

发明人： HUIWEN XU ,  MEI-YEE SHEK ,  LI-QUN XIA ,  AMIR AL-BAYATI ,  DEREK WITTY ,  HICHEM M'SAAD

IPC分类号： H01L21/30

CPC分类号： C23C16/308 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76834

摘要： Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed form the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.

摘要翻译： 提供了在基板上处理膜的方法。 在一个方面，所述方法包括在通过在膜上沉积包含硅，碳和任选的氧和/或氮的薄层，在从膜去除光致抗蚀剂之后处理图案化的低介电常数膜。 薄层为图案化的低介电常数膜提供了富含碳的疏水性表面。 薄层还保护低介电常数膜免于随后的湿法清洗工艺和前体渗透，随后沉积在低介电常数膜上。