公开(公告)号：US20190295968A1

公开(公告)日：2019-09-26

申请号：US16058922

申请日：2018-08-08

Applicant: Analog Devices Global Unlimited Company

Inventor： Bilge Bayrakci ,  Abdullah Celik ,  Winslow Round ,  Santosh Anil Kudtarkar ,  Yusuf Atesal ,  Turusan Kolcuoglu

IPC: H01L23/66 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00

Abstract: A package is disclosed. The package includes a carrier that comprises a first conductive layer on a first side and a second conductive layer on a second side opposite the first side. The first conductive layer comprises wire bonding pads. The package also includes a semiconductor die that is flip chip mounted on the first side of the carrier.

公开(公告)号：US20160099220A1

公开(公告)日：2016-04-07

申请号：US14852380

申请日：2015-09-11

Applicant: Analog Devices Global

Inventor： Yusuf Alperen Atesal ,  Turusan Kolcuoglu

IPC: H01L23/66 ,  H01L23/498 ,  H01L23/64 ,  H01L23/00

CPC classification number: H01L23/66 ,  H01L23/49838 ,  H01L23/642 ,  H01L23/645 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2224/05553 ,  H01L2224/48157 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/1421 ,  H04B1/40 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/85399

Abstract: A high isolation wideband switch is disclosed. In one aspect, the switch includes an integrated circuit package having an integrated circuit die with a first plurality of leads that is positioned on a package substrate that has a second plurality of leads. The first leads of the integrated circuit die are connected to the second the leads of the package substrate via bond wires and a first electrical coupling occurs between the first leads and the integrated circuit die in response to an RF signal applied to the integrated circuit package. The bond wires have a second electrical coupling in response to the RF signal and the bond wires are arranged such that the second electrical coupling is matched to the first electrical coupling within a selected frequency band so as to reduce the overall electrical coupling of the integrated circuit package for RF signals within the selected frequency band.

Abstract translation: 公开了一种高隔离宽带开关。 一方面，开关包括具有集成电路管芯的集成电路封装，该集成电路管芯具有位于具有第二多个引线的封装衬底上的第一多个引线。 集成电路管芯的第一引线通过接合线连接到封装衬底的第二引线，并且响应于施加到集成电路封装的RF信号而在第一引线和集成电路管芯之间发生第一电耦合。 接合线具有响应于RF信号的第二电耦合，并且接合线布置成使得第二电耦合在所选频带内与第一电耦合相匹配，以便减小集成电路的整体电耦合 封装，用于所选频段内的射频信号。

公开(公告)号：US20190296726A1

公开(公告)日：2019-09-26

申请号：US15926323

申请日：2018-03-20

Applicant: Analog Devices Global Unlimited Company

Inventor： Turusan Kolcuoglu ,  Huseyin Kayahan ,  Yusuf Alperen Atesal

IPC: H03K17/04 ,  H04B1/44 ,  H03K17/693

Abstract: Apparatus and methods for biasing radio frequency (RF) switches to achieve fast switching are disclosed herein. In certain configurations, a switch bias circuit generates a switch control voltage for turning on or off a switch that handles RF signals. The switch bias circuit provides the switch control voltage to a control input of the switch by way of a resistor. Additionally, the switch bias circuit pulses the switch control voltage when turning on or off the switch to thereby shorten switching time. Thus, the switch can be turned on or off quickly, which allows the switch to be available for use soon after the state of the switch has been changed.

公开(公告)号：US09893025B2

公开(公告)日：2018-02-13

申请号：US14852380

申请日：2015-09-11

Applicant: Analog Devices Global

Inventor： Yusuf Alperen Atesal ,  Turusan Kolcuoglu

IPC: H01L23/66 ,  H01L23/498 ,  H01L23/64 ,  H01L23/00 ,  H04B1/40

CPC classification number: H01L23/66 ,  H01L23/49838 ,  H01L23/642 ,  H01L23/645 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2224/05553 ,  H01L2224/48157 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/1421 ,  H04B1/40 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/85399

Abstract: A high isolation wideband switch is disclosed. In one aspect, the switch includes an integrated circuit package having an integrated circuit die with a first plurality of leads that is positioned on a package substrate that has a second plurality of leads. The first leads of the integrated circuit die are connected to the second the leads of the package substrate via bond wires and a first electrical coupling occurs between the first leads and the integrated circuit die in response to an RF signal applied to the integrated circuit package. The bond wires have a second electrical coupling in response to the RF signal and the bond wires are arranged such that the second electrical coupling is matched to the first electrical coupling within a selected frequency band so as to reduce the overall electrical coupling of the integrated circuit package for RF signals within the selected frequency band.

公开(公告)号：US10778206B2

公开(公告)日：2020-09-15

申请号：US15926323

申请日：2018-03-20

Applicant: Analog Devices Global Unlimited Company

Inventor： Turusan Kolcuoglu ,  Huseyin Kayahan ,  Yusuf Alperen Atesal

IPC: H04B1/44 ,  H03K17/04 ,  H03K17/693

Abstract: Apparatus and methods for biasing radio frequency (RF) switches to achieve fast switching are disclosed herein. In certain configurations, a switch bias circuit generates a switch control voltage for turning on or off a switch that handles RF signals. The switch bias circuit provides the switch control voltage to a control input of the switch by way of a resistor. Additionally, the switch bias circuit pulses the switch control voltage when turning on or off the switch to thereby shorten switching time. Thus, the switch can be turned on or off quickly, which allows the switch to be available for use soon after the state of the switch has been changed.

公开(公告)号：US09374124B2

公开(公告)日：2016-06-21

申请号：US14506468

申请日：2014-10-03

Applicant: ANALOG DEVICES GLOBAL

Inventor： Turusan Kolcuoglu ,  Bilal Tarik Cavus ,  Yusuf Alperen Atesal

IPC: H04B1/44

CPC classification number: H04B1/44 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K2017/066 ,  H03K2217/0054 ,  H04B1/48

Abstract: Apparatus and methods for radio frequency (RF) switches are provided herein. In certain implementations, an RF switching circuit includes an adaptive switch bias circuit that controls gate and/or channel voltages of one or more field effect transistor (FET) switches. Additionally, the adaptive switch bias circuit is powered by a power high supply voltage and a power low supply voltage, and can be used to selectively turn on or off the FET switches based on a state of one or more switch enable signals. The adaptive switch bias circuit adaptively biases that gate and/or channel voltages of the FET switches based on a voltage difference between the power high and power low supply voltages to provide switch biasing suitable for use with two or more different power supply voltage levels.

Abstract translation: 本文提供射频（RF）开关的装置和方法。 在某些实现中，RF开关电路包括控制一个或多个场效应晶体管（FET）开关的栅极和/或沟道电压的自适应开关偏置电路。 此外，自适应开关偏置电路由功率高的电源电压和功率低的电源电压供电，并且可以用于基于一个或多个开关使能信号的状态选择性地导通或关断FET开关。 自适应开关偏置电路基于电力高电源电压和功率低电源电压之间的电压差自适应地偏置FET开关的栅极和/或沟道电压，以提供适合于与两个或更多个不同电源电压电平一起使用的开关偏置。

公开(公告)号：US20160099743A1

公开(公告)日：2016-04-07

申请号：US14506468

申请日：2014-10-03

Applicant: ANALOG DEVICES GLOBAL

Inventor： Turusan Kolcuoglu ,  Bilal Tarik Cavus ,  Yusuf Alperen Atesal

IPC: H04B1/44

CPC classification number: H04B1/44 ,  H03K17/063 ,  H03K17/102 ,  H03K17/693 ,  H03K2017/066 ,  H03K2217/0054 ,  H04B1/48

Abstract: Apparatus and methods for radio frequency (RF) switches are provided herein. In certain implementations, an RF switching circuit includes an adaptive switch bias circuit that controls gate and/or channel voltages of one or more field effect transistor (FET) switches. Additionally, the adaptive switch bias circuit is powered by a power high supply voltage and a power low supply voltage, and can be used to selectively turn on or off the FET switches based on a state of one or more switch enable signals. The adaptive switch bias circuit adaptively biases that gate and/or channel voltages of the FET switches based on a voltage difference between the power high and power low supply voltages to provide switch biasing suitable for use with two or more different power supply voltage levels.

Abstract translation: 本文提供射频（RF）开关的装置和方法。 在某些实现中，RF开关电路包括控制一个或多个场效应晶体管（FET）开关的栅极和/或沟道电压的自适应开关偏置电路。 此外，自适应开关偏置电路由功率高的电源电压和功率低的电源电压供电，并且可以用于基于一个或多个开关使能信号的状态选择性地导通或关断FET开关。 自适应开关偏置电路基于电力高电源电压和功率低电源电压之间的电压差自适应地偏置FET开关的栅极和/或沟道电压，以提供适合于与两个或更多个不同电源电压电平一起使用的开关偏压。

公开(公告)号：US09281285B1

公开(公告)日：2016-03-08

申请号：US14502363

申请日：2014-09-30

Applicant: Analog Devices Global

Inventor： Yusuf Alperen Atesal ,  Turusan Kolcuoglu

IPC: H01L23/60 ,  H01L23/66 ,  H01L23/00 ,  H01L27/02 ,  H01L23/50 ,  H01L23/64 ,  H04B3/32

CPC classification number: H01L23/66 ,  H01L23/50 ,  H01L23/60 ,  H01L23/64 ,  H01L23/642 ,  H01L23/647 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0248 ,  H01L2223/6611 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/45014 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/1205 ,  H01L2924/1207 ,  H01L2924/1421 ,  H04B3/32 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599

Abstract: Aspects of this disclosure relate to a termination circuit configured to mitigate crosstalk from a radio frequency (RF) input/output (I/O) path to a second I/O path, such as a digital I/O path. Such crosstalk can be due to coupling between adjacent bond wires, for example. The termination circuit can include a low impedance loss path, such as a series RC shunt circuit. According to certain embodiments, an electrostatic discharge (ESD) protection circuit can be in parallel with the termination circuit.

Abstract translation: 本公开的方面涉及被配置为减轻从射频（RF）输入/输出（I / O）路径到诸如数字I / O路径的第二I / O路径的串扰的终端电路。 这种串扰可能是由于例如相邻接合线之间的耦合。 终端电路可以包括低阻抗损耗路径，例如串联RC分流电路。 根据某些实施例，静电放电（ESD）保护电路可以与终端电路并联。

公开(公告)号：US09667244B1

公开(公告)日：2017-05-30

申请号：US14942637

申请日：2015-11-16

Applicant: Analog Devices Global

Inventor： Bilal Tarik Cavus ,  Turusan Kolcuoglu ,  Yusuf Alperen Atesal

IPC: H03B1/00 ,  H03K3/00 ,  H03K17/687

CPC classification number: H03K17/687 ,  H03K17/145 ,  H03K17/693

Abstract: A control circuit is provided for controlling the voltage at the gate terminal of a field effect transistor acting as a switch. The voltage, at for example, the source terminal of the transistor can be provided to a low pass filter and is then voltage translated to provide the gate signal. The filtering can be arranged so as to compensate for the effect of parasitic capacitances within the transistor, thereby linearizing its frequency response. The voltage translation can help to limit voltage differences between the gate and channel of the transistor. This can be significant as relatively fast transistors, as might be used in microwave circuits, may fail with relatively modest voltages at their gates.

公开(公告)号：US20160093579A1

公开(公告)日：2016-03-31

申请号：US14502363

申请日：2014-09-30

Applicant: Analog Devices Global

Inventor： Yusuf Alperen Atesal ,  Turusan Kolcuoglu

IPC: H01L23/66 ,  H01L27/02 ,  H04B3/32 ,  H01L23/60 ,  H01L23/64 ,  H01L23/00 ,  H01L23/50

CPC classification number: H01L23/66 ,  H01L23/50 ,  H01L23/60 ,  H01L23/64 ,  H01L23/642 ,  H01L23/647 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0248 ,  H01L2223/6611 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/45014 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/1205 ,  H01L2924/1207 ,  H01L2924/1421 ,  H04B3/32 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/05599

Abstract: Aspects of this disclosure relate to a termination circuit configured to mitigate crosstalk from a radio frequency (RF) input/output (I/O) path to a second I/O path, such as a digital I/O path. Such crosstalk can be due to coupling between adjacent bond wires, for example. The termination circuit can include a low impedance loss path, such as a series RC shunt circuit. According to certain embodiments, an electrostatic discharge (ESD) protection circuit can be in parallel with the termination circuit.

Abstract translation: 本公开的方面涉及被配置为减轻从射频（RF）输入/输出（I / O）路径到诸如数字I / O路径的第二I / O路径的串扰的终端电路。 这种串扰可能是由于例如相邻接合线之间的耦合。 终端电路可以包括低阻抗损耗路径，例如串联RC分流电路。 根据某些实施例，静电放电（ESD）保护电路可以与终端电路并联。