公开(公告)号：US20080197125A1

公开(公告)日：2008-08-21

申请号：US11675856

申请日：2007-02-16

申请人： ANQING CUI ,  Sean M. Seutter ,  Jacob W. Grayson ,  R. Suryanarayanan Iyer

发明人： ANQING CUI ,  Sean M. Seutter ,  Jacob W. Grayson ,  R. Suryanarayanan Iyer

IPC分类号： H05B3/10 ,  G06F19/00

CPC分类号： H01L21/67103 ,  H01L21/67109 ,  H01L21/6875

摘要： Embodiments of substrate heating methods and apparatus are provided herein. In one embodiment, a substrate heater is provided including a heater plate having a top surface and an opposing bottom surface, a recess formed in the top surface, the recess having a feature having an upper surface for supporting a substrate, wherein the depth from a bottom surface of the recess to the upper surface of the feature is at least 5 mils. One or more pads may be disposed in the recess for supporting a substrate. The heater plate may have a thickness of about 19 mm. One or more indentations may be formed in the bottom surface of the recess for altering the rate of heat transfer to a portion of a substrate disposed above the indentation during processing. The heater plate may be utilized in a process chamber for performing heat-assisted processes.

摘要翻译： 本文提供了基板加热方法和装置的实施例。 在一个实施例中，提供了一种衬底加热器，其包括具有顶表面和相对底表面的加热器板，在顶表面中形成的凹部，该凹部具有用于支撑衬底的上表面的特征，其中， 该凹槽的底表面至该特征的上表面至少为5密耳。 一个或多个垫可以设置在凹槽中用于支撑基底。 加热器板可以具有约19mm的厚度。 可以在凹部的底表面中形成一个或多个凹口，用于改变在处理期间设置在压痕上方的衬底的一部分的热传递速率。 加热器板可以用在用于执行热辅助工艺的处理室中。

公开(公告)号：US20100294199A1

公开(公告)日：2010-11-25

申请号：US12763522

申请日：2010-04-20

申请人： BINH TRAN ,  ANQING CUI ,  BERNARD L. HWANG ,  SON T. NGUYEN ,  ANH N. NGUYEN ,  SEAN M. SEUTTER ,  XIANZHI TAO

发明人： BINH TRAN ,  ANQING CUI ,  BERNARD L. HWANG ,  SON T. NGUYEN ,  ANH N. NGUYEN ,  SEAN M. SEUTTER ,  XIANZHI TAO

IPC分类号： H01L21/02 ,  C23C16/00 ,  C23C16/513 ,  C23C16/455

CPC分类号： H01L21/6719 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45512 ,  C23C16/45561 ,  H01L21/68742 ,  H01L21/68785

摘要： Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.

摘要翻译： 本发明的实施例提供了用于在衬底上沉积层（例如通过化学气相沉积（CVD））的改进的装置。 本文公开的本发明的装置可以有利地促进一种或多种在给定的处理室内具有减小的膜厚度不均匀的沉积膜，改善的颗粒性能（例如，在处理室中形成的膜上的还原颗粒），室到室的性能 在多个处理室之间进行匹配，以及改进的处理室可维护性。

公开(公告)号：US20130001215A1

公开(公告)日：2013-01-03

申请号：US13173471

申请日：2011-06-30

申请人： YU CHANG ,  GWO-CHUAN TZU ,  ANQING CUI ,  WILLIAM W. KUANG ,  OLKAN CUVALCI

发明人： YU CHANG ,  GWO-CHUAN TZU ,  ANQING CUI ,  WILLIAM W. KUANG ,  OLKAN CUVALCI

IPC分类号： F27D11/02

CPC分类号： F27B17/0025 ,  H01J37/32091 ,  H01J37/32715 ,  H01L21/67103 ,  H01L21/67248

摘要： Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a substrate support surface and a shaft; an RF electrode disposed in the substrate support proximate the substrate support surface to receive RF current from an RF source; a heater disposed proximate the substrate support surface to provide heat to a substrate when disposed on the substrate support surface, the heater having one or more conductive lines to provide power to the heater; a thermocouple to measure the temperature of a substrate when disposed on the substrate support surface; and a conductive element having an interior volume with the one or more conductive lines and the thermocouple disposed through the interior volume, the conductive element coupled to the RF electrode and having an electric field of about zero in the interior volume when RF current is flowed through the conductive element.

摘要翻译： 本文提供了用于处理基板的装置。 在一些实施例中，衬底支撑件包括衬底支撑表面和轴; 设置在所述衬底支撑件中的RF电极，靠近所述衬底支撑表面以从RF源接收RF电流; 设置在所述基板支撑表面附近的加热器，以在设置在所述基板支撑表面上时向所述基板提供热量，所述加热器具有一个或多个导线以向所述加热器提供电力; 当设置在基板支撑表面上时测量基板的温度的热电偶; 以及具有内部体积的导电元件，所述一个或多个导电线和所述热电偶设置穿过所述内部体积，所述导电元件耦合到所述RF电极，并且当RF电流流过所述内部体积时具有约零的电场 导电元件。