公开(公告)号：US10049881B2

公开(公告)日：2018-08-14

申请号：US13536443

申请日：2012-06-28

申请人： Matthew S. Rogers ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcolm J. Bevan

发明人： Matthew S. Rogers ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcolm J. Bevan

IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/28 ,  H01L21/02 ,  H01L21/321 ,  H01L27/11524

摘要： Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

公开(公告)号：US20130040444A1

公开(公告)日：2013-02-14

申请号：US13536443

申请日：2012-06-28

申请人： MATTHEW S. ROGERS ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcom J. Bevan

发明人： MATTHEW S. ROGERS ,  Roger Curtis ,  Lara Hawrylchak ,  Ken Kaung Lai ,  Bernard L. Hwang ,  Jeffrey Tobin ,  Christopher Olsen ,  Malcom J. Bevan

IPC分类号： H01L21/26

CPC分类号： H01L21/28273 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/3211 ,  H01L27/11524

摘要： Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

摘要翻译： 本发明的实施例提供了一种用于氮化堆叠材料的改进的装置和方法。 在一个实施例中，远程等离子体系统包括限定用于产生包括离子和自由基的等离子体的第一区域的远程等离子体室，限定用于处理半导体器件的第二区域的处理室，所述处理室包括形成在侧壁 处理室的入口端口与第二区域流体连通，以及设置在远程等离子体室和处理室之间并具有与第一区域和入口流体连通的通道的输送构件，其中输送 构件被构造成使得通道的纵向轴线相对于入口的纵向轴线以大约20度至大约80度的角度相交。

公开(公告)号：US09117867B2

公开(公告)日：2015-08-25

申请号：US13536098

申请日：2012-06-28

申请人： Bernard L. Hwang ,  Jose Antonio Marin ,  Son T. Nguyen

发明人： Bernard L. Hwang ,  Jose Antonio Marin ,  Son T. Nguyen

IPC分类号： H01L21/683 ,  H01L21/687

CPC分类号： H01L21/6833 ,  H01L21/68785 ,  Y10T279/23

摘要： Embodiments of electrostatic chucks for substrate processing are provided herein. In some embodiments, an electrostatic chuck may include a puck for supporting a substrate, the puck formed from a dielectric material and having a chucking electrode disposed within the puck proximate a support surface of the puck to electrostatically retain the substrate when disposed on the puck; a base having a ring extending from the base to support the puck; and a spacer disposed between the base and the puck to support the puck above the base such that a gap is formed between the puck and the base, wherein the spacer supports the puck proximate a peripheral edge of the puck.

摘要翻译： 本文提供了用于基板处理的静电卡盘的实施例。 在一些实施例中，静电卡盘可以包括用于支撑基底的圆盘，所述圆盘由电介质材料形成，并且具有设置在靠近所述圆盘的支撑表面的所述圆盘内的卡盘电极，以在设置在所述圆盘上时静电地保持所述基板; 具有从所述基部延伸以支撑所述圆盘的环的基部; 以及间隔件，其设置在所述基部和所述圆盘之间，以将所述圆盘支撑在所述基座上方，使得在所述圆盘和所述基座之间形成间隙，其中所述间隔件支撑靠近所述圆盘的周边边缘的所述圆盘。

公开(公告)号：US20100294199A1

公开(公告)日：2010-11-25

申请号：US12763522

申请日：2010-04-20

申请人： BINH TRAN ,  ANQING CUI ,  BERNARD L. HWANG ,  SON T. NGUYEN ,  ANH N. NGUYEN ,  SEAN M. SEUTTER ,  XIANZHI TAO

发明人： BINH TRAN ,  ANQING CUI ,  BERNARD L. HWANG ,  SON T. NGUYEN ,  ANH N. NGUYEN ,  SEAN M. SEUTTER ,  XIANZHI TAO

IPC分类号： H01L21/02 ,  C23C16/00 ,  C23C16/513 ,  C23C16/455

CPC分类号： H01L21/6719 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45512 ,  C23C16/45561 ,  H01L21/68742 ,  H01L21/68785

摘要： Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.

摘要翻译： 本发明的实施例提供了用于在衬底上沉积层（例如通过化学气相沉积（CVD））的改进的装置。 本文公开的本发明的装置可以有利地促进一种或多种在给定的处理室内具有减小的膜厚度不均匀的沉积膜，改善的颗粒性能（例如，在处理室中形成的膜上的还原颗粒），室到室的性能 在多个处理室之间进行匹配，以及改进的处理室可维护性。

公开(公告)号：US09312154B2

公开(公告)日：2016-04-12

申请号：US12763522

申请日：2010-04-20

申请人： Binh Tran ,  Anqing Cui ,  Bernard L. Hwang ,  Son T. Nguyen ,  Anh N. Nguyen ,  Sean M. Seutter ,  Xianzhi Tao

发明人： Binh Tran ,  Anqing Cui ,  Bernard L. Hwang ,  Son T. Nguyen ,  Anh N. Nguyen ,  Sean M. Seutter ,  Xianzhi Tao

IPC分类号： H01L21/67 ,  C23C16/455 ,  C23C16/44 ,  H01L21/687

CPC分类号： H01L21/6719 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45512 ,  C23C16/45561 ,  H01L21/68742 ,  H01L21/68785

摘要： Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.

摘要翻译： 本发明的实施例提供了用于在衬底上沉积层（例如通过化学气相沉积（CVD））的改进的装置。 本文公开的本发明的装置可以有利地促进一种或多种在给定的处理室内具有减小的膜厚度不均匀的沉积膜，改善的颗粒性能（例如，在处理室中形成的膜上的还原颗粒），室到室的性能 在多个处理室之间进行匹配，以及改进的处理室可维护性。

公开(公告)号：US20130001899A1

公开(公告)日：2013-01-03

申请号：US13536098

申请日：2012-06-28

申请人： BERNARD L. HWANG ,  JOSE ANTONIO MARIN ,  SON T. NGUYEN

发明人： BERNARD L. HWANG ,  JOSE ANTONIO MARIN ,  SON T. NGUYEN

IPC分类号： H01L21/683

CPC分类号： H01L21/6833 ,  H01L21/68785 ,  Y10T279/23

摘要： Embodiments of electrostatic chucks for substrate processing are provided herein. In some embodiments, an electrostatic chuck may include a puck for supporting a substrate, the puck formed from a dielectric material and having a chucking electrode disposed within the puck proximate a support surface of the puck to electrostatically retain the substrate when disposed on the puck; a base having a ring extending from the base to support the puck; and a spacer disposed between the base and the puck to support the puck above the base such that a gap is formed between the puck and the base, wherein the spacer supports the puck proximate a peripheral edge of the puck.

摘要翻译： 本文提供了用于基板处理的静电卡盘的实施例。 在一些实施例中，静电卡盘可以包括用于支撑基底的圆盘，所述圆盘由电介质材料形成，并且具有设置在靠近所述圆盘的支撑表面的所述圆盘内的卡盘电极，以在设置在所述圆盘上时静电地保持所述基板; 具有从所述基部延伸以支撑所述圆盘的环的基部; 以及间隔件，其设置在所述基部和所述圆盘之间，以将所述圆盘支撑在所述基座上方，使得在所述圆盘和所述基座之间形成间隙，其中所述间隔件支撑靠近所述圆盘的周边边缘的所述圆盘。