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    METHODS AND APPARATUS FOR RAPIDLY RESPONSIVE HEAT CONTROL IN PLASMA PROCESSING DEVICES
    1.
    发明申请
    METHODS AND APPARATUS FOR RAPIDLY RESPONSIVE HEAT CONTROL IN PLASMA PROCESSING DEVICES 有权
    等离子体加工装置中快速响应加热控制的方法和装置

    公开(公告)号：US20130180963A1

    公开(公告)日：2013-07-18

    申请号：US13732621

    申请日：2013-01-02

    Applicant: APPLIED MATERIALS, INC.

    Inventor： CHUNLEI ZHANG ,  RICHARD FOVELL ,  EZRA ROBERT GOLD ,  AJIT BALAKRISHNA ,  JAMES P. CRUSE

    IPC: H05B7/18 ,  H01L21/67

    CPC classification number: H05B7/18 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069

    Abstract: Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein.

    Abstract translation: 本文提供了用于调节等离子体增强处理室中的组分的温度的方法和装置。 在一些实施例中，用于处理衬底的装置包括处理室和RF源，以提供RF能量以在处理室中形成等离子体。 一个部件设置在处理室中，以便在形成时被等离子体加热。 加热器被配置为加热部件并且热交换器被配置成从部件移除热量。 冷却器通过具有设置在其中的开/关流量控制阀的第一流动管道和旁路循环来耦合到热交换器，旁路回路绕过流量控制阀，其中旁路回路具有设置在其中的流量比阀。

    METHOD AND APPARATUS FOR CONTROLLING A PROCESSING REACTOR
    3.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING A PROCESSING REACTOR 有权

    公开(公告)号：US20210020410A1

    公开(公告)日：2021-01-21

    申请号：US16591139

    申请日：2019-10-02

    Applicant: APPLIED MATERIALS, INC.

    Inventor： MICHAEL NICHOLS ,  TINA DHEKIAL-PHUKAN ,  VENKATA RAVISHANKAR KASIBHOTLA ,  AJIT BALAKRISHNA ,  SANGGYUM KIM

    IPC: H01J37/32 ,  H01L21/67

    Abstract: Methods and systems for processing substrates are provided. The system can include: a processing chamber configured to process a substrate based on a recipe; a plurality of sub-systems in operable communication with the processing chamber for controlling corresponding parameters associated with processing the substrate; and a controller in operable communication with the processing chamber and each of the plurality of sub-systems and configured to control each of the plurality of sub-systems and the processing chamber using information included in the recipe and feedback provided by at least one of the plurality of sub-systems. The controller is configured to compare information included in the recipe and feedback provided by at least one of the plurality of sub-systems with stored empirical information relating to the recipe and each of the plurality of sub-systems, and adjust at least one of the corresponding parameters associated with processing the substrate based on a determined comparison.

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