AUTOMATED APPARATUS TO TEMPORARILY ATTACH SUBSTRATES TO CARRIERS WITHOUT ADHESIVES FOR PROCESSING

    公开(公告)号:US20190237352A1

    公开(公告)日:2019-08-01

    申请号:US15885120

    申请日:2018-01-31

    Abstract: Embodiments include a method for processing thin substrates. Embodiments may include electrostatically bonding a substrate to a first electrostatic carrier (ESC), with a backside of the substrate is facing away from the first ESC. Thereafter, the substrate may be thinned to form a thinned substrate. The thinned substrate may then be transferred to a second ESC with a front side of the thinned substrate facing away from the second ESC. Embodiments may include cleaning the front side surface of the thinned substrate and transferring the thinned substrate to a third ESC. In an embodiment, a backside of the thinned substrate is facing away from the third ESC. Embodiments may also include processing the backside surface of the thinned substrate, and transferring the thinned substrate to a tape frame.

    SCANNED PULSE ANNEAL APPARATUS AND METHODS
    2.
    发明申请
    SCANNED PULSE ANNEAL APPARATUS AND METHODS 审中-公开
    扫描脉冲神经元装置和方法

    公开(公告)号:US20160020117A1

    公开(公告)日:2016-01-21

    申请号:US14805232

    申请日:2015-07-21

    Abstract: Apparatus, system, and method for thermally treating a substrate. A source of pulsed electromagnetic energy can produce pulses at a rate of at least 100 Hz. A movable substrate support can move a substrate relative to the pulses of electromagnetic energy. An optical system can be disposed between the energy source and the movable substrate support, and can include components to shape the pulses of electromagnetic energy toward a rectangular profile. A controller can command the source of electromagnetic energy to produce pulses of energy at a selected pulse rate. The controller can also command the movable substrate support to scan in a direction parallel to a selected edge of the rectangular profile at a selected speed such that every point along a line parallel to the selected edge receives a predetermined number of pulses of electromagnetic energy.

    Abstract translation: 用于热处理基底的装置,系统和方法。 脉冲电磁能源可以以至少100Hz的速率产生脉冲。 可移动衬底支撑件可以相对于电磁能的脉冲移动衬底。 光学系统可以设置在能量源和可移动衬底支撑件之间,并且可以包括将电磁能的脉冲朝向矩形轮廓成形的部件。 控制器可以命令电磁能量源以选定的脉冲速率产生能量脉冲。 控制器还可以以可选择的速度命令可移动衬底支撑件沿平行于所述矩形轮廓的选定边缘的方向进行扫描,使得沿着与所选边缘平行的线的每个点接收预定数量的电磁能量脉冲。

    ATOMIC LAYER EPITAXY FOR SEMICONDUCTOR GATE STACK LAYER FOR ADVANCED CHANNEL DEVICES
    3.
    发明申请
    ATOMIC LAYER EPITAXY FOR SEMICONDUCTOR GATE STACK LAYER FOR ADVANCED CHANNEL DEVICES 审中-公开
    用于高级通道器件的半导体栅极堆叠层的原子层外观

    公开(公告)号:US20170011917A1

    公开(公告)日:2017-01-12

    申请号:US15275664

    申请日:2016-09-26

    Abstract: Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

    Abstract translation: 本公开的实施例提供了用于在衬底上形成外延层的方法和装置。 将衬底暴露于脉冲激光辐射以清洁,退火和/或激活衬底的表面。 然后将衬底在自限制沉积工艺中暴露于沉积前体。 衬底可以再次暴露于脉冲激光辐射,然后在第二自限制沉积工艺中暴露于第二沉积前体。 可以根据需要重复该过程,以一次形成非常高质量的一个原子层的外延层。

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