公开(公告)号：US20180374736A1

公开(公告)日：2018-12-27

申请号：US16008569

申请日：2018-06-14

Applicant: Applied Materials, Inc.

Inventor： Niranjan KUMAR ,  Kim Ramkumar VELLORE ,  Douglas H. BURNS ,  Gautam PISHARODY ,  Seshadri RAMASWAMI ,  Douglas A. BUCHBERGER, JR.

IPC: H01L21/683 ,  H01L21/02 ,  H01L21/67

Abstract: Embodiments of the disclosure relate to the use of an electrostatic carrier for securing, transporting and assembling dies on a substrate. In one embodiment, an electrostatic carrier includes a body having a top surface and a bottom surface, at least a first bipolar chucking electrode disposed within the body, at least two contact pads disposed on the bottom surface of the body and connected to the first bipolar chucking electrode, and a floating electrode disposed between the first bipolar chucking electrode and the bottom surface. In another embodiment, a die-assembling system includes the electrostatic carrier configured to electrostatically secure a plurality of dies, a carrier-holding platform configured to hold the electrostatic carrier, a die input platform and a loading robot having a range of motion configured to pick the plurality of dies from the die input platform and place them on the electrostatic carrier.

公开(公告)号：US20210151949A1

公开(公告)日：2021-05-20

申请号：US16683683

申请日：2019-11-14

Applicant: Applied Materials, Inc.

Inventor： Philip Hsin-Hua LI ,  Seshadri RAMASWAMI ,  Kiyoung LEE

IPC: H01S5/022 ,  H01S5/323

Abstract: The disclosure describes techniques for forming an ohmic contact layer in a wafer containing CMOS devices and attaching a VCSEL die therein. A composite layer that forms the ohmic contact layer is selected based on the epitaxially-grown compound semiconductor material of the VCSEL die. The ohmic contact layer may not comprise gold, as gold introduces contamination in the rest of the CMOS process. The wafer may have an allocated area for accepting the VCSEL die. The allocated area may have a recess to facilitate placement of the VCSEL die.

公开(公告)号：US20200161156A1

公开(公告)日：2020-05-21

申请号：US16198569

申请日：2018-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Jingyu QIAO ,  Qiwei LIANG ,  Viachslav BABAYAN ,  Seshadri RAMASWAMI ,  Srinivas D. NEMANI

IPC: H01L21/683 ,  C23C16/40 ,  C23C16/56

Abstract: Embodiments disclosed herein may include an electrostatic chuck (ESC) carrier. In an embodiment, the ESC carrier may comprise a carrier substrate having a first surface and a second surface opposite the first surface. In an embodiment, a first through substrate opening and a second through substrate opening may pass through the carrier substrate from the first surface to the second surface. Embodiments may include a first conductor in the first through substrate opening, and a second conductor in the second through substrate opening. In an embodiment, the ESC carrier may further comprise a first electrode over the first surface of the carrier substrate and electrically coupled to the first conductor, and a second electrode over the first surface of the carrier substrate and electrically coupled to the second conductor. In an embodiment, an oxide layer may be formed over the first electrode and the second electrode.

公开(公告)号：US20190237352A1

公开(公告)日：2019-08-01

申请号：US15885120

申请日：2018-01-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Niranjan KUMAR ,  Seshadri RAMASWAMI ,  Shay ASSAF ,  Amikam SADE ,  Andy CONSTANT ,  Maureen BREILING

IPC: H01L21/683 ,  H01L21/67

Abstract: Embodiments include a method for processing thin substrates. Embodiments may include electrostatically bonding a substrate to a first electrostatic carrier (ESC), with a backside of the substrate is facing away from the first ESC. Thereafter, the substrate may be thinned to form a thinned substrate. The thinned substrate may then be transferred to a second ESC with a front side of the thinned substrate facing away from the second ESC. Embodiments may include cleaning the front side surface of the thinned substrate and transferring the thinned substrate to a third ESC. In an embodiment, a backside of the thinned substrate is facing away from the third ESC. Embodiments may also include processing the backside surface of the thinned substrate, and transferring the thinned substrate to a tape frame.

公开(公告)号：US20190115241A1

公开(公告)日：2019-04-18

申请号：US15782650

申请日：2017-10-12

Applicant: APPLIED MATERIALS, INC.

Inventor： Kim VELLORE ,  Douglas A. BUCHBERGER, JR. ,  Niranjan Kumar ,  Seshadri RAMASWAMI

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/673 ,  C23C8/16

Abstract: The present disclosure relates to an electrostatic chuck, including: a base having a dielectric first surface to support a substrate thereon during processing; and an electrode disposed within the base proximate the dielectric first surface to facilitate electrostatically coupling the substrate to the dielectric first surface during use, wherein the dielectric first surface is sufficiently hydrophobic to electrostatically retain the substrate to the dielectric first surface when contacted with water. Methods of making and using the electrostatic chuck under wet conditions are also disclosed.

公开(公告)号：US20180281151A1

公开(公告)日：2018-10-04

申请号：US15474736

申请日：2017-03-30

Applicant: Applied Materials, Inc.

Inventor： Seshadri RAMASWAMI ,  Rajeev BAJAJ ,  Niranjan KUMAR ,  Sriskantharajah THIRUNAVUKARASU ,  Arvind SUNDARRAJAN

IPC: B24B37/32 ,  B24B37/20 ,  B24B41/06

Abstract: Embodiments of the disclosure relate to a system, apparatus and method for polishing thin substrates with high planarity. The apparatus comprises a chemical mechanical polishing head and a plate. The polishing head comprises a bottom surface, a retaining ring, a workpiece-receiving pocket defined between the bottom surface and the retaining ring, and at least one vacuum port adapted to provide a vacuum to the workpiece-receiving pocket through the bottom surface of the polishing head. The plate is disposed in the workpiece-receiving pocket such that the upper side of the plate faces the bottom surface of the polishing head and the lower side of the plate faces away from the bottom surface of the polishing head. The plate has a geometry or a material property configured to allow fluid to pass between the upper side and the lower side of the plate upon application of vacuum in the workpiece-receiving pocket.