公开(公告)号：US20140105582A1

公开(公告)日：2014-04-17

申请号：US14042864

申请日：2013-10-01

Applicant: Applied Materials, Inc.

Inventor： SAIRAJU TALLAVARJULA ,  KEVIN JOSEPH BAUTISTA ,  JEFFREY TOBIN

IPC: B23Q3/18 ,  H05B3/00

CPC classification number: B23Q3/18 ,  H01L21/67115 ,  H01L21/6875 ,  H05B3/0038 ,  H05B3/0047

Abstract: Embodiments of edge rings for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, an edge ring for a semiconductor process chamber may include an annular body having a central opening, an inner edge, an outer edge, an upper surface, and a lower surface, an inner lip disposed proximate the inner edge and extending downward from the upper surface, and a plurality of protrusions extending upward from the inner lip and disposed along the inner edge of the annular body, wherein the plurality of protrusions are arranged to support a substrate above the inner lip and over the central opening, wherein the inner lip is configured to substantially prevent light radiation from travelling between a first volume disposed above the edge ring and a second volume disposed below the edge ring when a substrate is disposed on the plurality of protrusions.

Abstract translation: 本文提供了用于半导体衬底处理室的衬底支撑件的边缘环的实施例。 在一些实施例中，用于半导体处理室的边缘环可以包括具有中心开口，内边缘，外边缘，上表面和下表面的环形主体，靠近内边缘设置并向下延伸的内唇缘 以及从所述内唇缘向上延伸并且沿着所述环形体的内边缘设置的多个突起，其中所述多个突起被布置成将衬底支撑在所述内唇缘上方且在所述中心开口上方，其中， 内唇被配置为当衬底设置在多个突起上时，基本上防止光辐射在设置在边缘环上方的第一容积和设置在边缘环下方的第二体积之间行进。

公开(公告)号：US20140099795A1

公开(公告)日：2014-04-10

申请号：US14044090

申请日：2013-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： JEFFREY TOBIN ,  BERNARD L. HWANG ,  CANFENG LAI ,  LARA HAWRYLCHAK ,  WEI LIU ,  JOHANES SWENBERG

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6831

Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.

Abstract translation: 提供了用于处理基板的方法和装置。 在一些实施例中，处理具有第一层的衬底的方法可以包括将衬底支撑件顶部放置在具有施加到其上的偏置功率的离子屏蔽体下方的处理室的较低处理容积内，离子屏蔽包括基本平坦的 平行于衬底支撑件支撑的构件和穿过平坦构件形成的多个孔，其中孔径与厚度平坦构件的比例为约10:1-1:10; 将处理气体流入离子屏蔽物上方的上部处理体积; 从所述上加工容积内的工艺气体形成等离子体; 用通过离子屏蔽的中性自由基处理第一层; 并且在处理第一层的同时将基底加热至高达约550摄氏度的温度。

公开(公告)号：US20150332941A1

公开(公告)日：2015-11-19

申请号：US14719546

申请日：2015-05-22

Applicant: APPLIED MATERIALS, INC.

Inventor： JEFFREY TOBIN ,  BERNARD L. HWANG ,  CANFENG LAI ,  LARA HAWRYLCHAK ,  WEI LIU ,  JOHANES SWENBERG

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6831

Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.

Abstract translation: 提供了用于处理基板的方法和装置。 在一些实施例中，处理具有第一层的衬底的方法可以包括将衬底支撑件顶部放置在具有施加到其上的偏置功率的离子屏蔽体下方的处理室的较低处理容积中，离子屏蔽包括基本平坦的 平行于衬底支撑件支撑的构件和穿过平坦构件形成的多个孔，其中孔径与厚度平坦构件的比例为约10:1-1:10; 将处理气体流入离子屏蔽物上方的上部处理体积; 从所述上加工容积内的工艺气体形成等离子体; 用通过离子屏蔽的中性自由基处理第一层; 并且在处理第一层的同时将基底加热至高达约550摄氏度的温度。