公开(公告)号：US20210175075A1

公开(公告)日：2021-06-10

申请号：US16708026

申请日：2019-12-09

Applicant: APPLIED MATERIALS, INC.

Inventor： SHASHANK SHARMA ,  WEI LIU ,  YONG SUN ,  PRAKET PRAKASH JHA

IPC: H01L21/02 ,  H01L21/3115 ,  H01J37/32

Abstract: Embodiments herein provide for oxygen radical based treatment of silicon containing material layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen radical based treatment of the FCVD deposited silicon containing material layers desirably increases the number of stable Si—O bonds, removes undesirably hydrogen and nitrogen impurities, and provides for further densification and excellent film quality in the treated silicon containing material layers. Embodiments include methods and apparatus for making a semiconductor device including: contacting a flowable layer of silicon containing material disposed on a substrate with a plurality of oxygen radicals under conditions sufficient to anneal and increase the density of the flowable layer of silicon containing material.

公开(公告)号：US20150072526A1

公开(公告)日：2015-03-12

申请号：US14484397

申请日：2014-09-12

Applicant: APPLIED MATERIALS, INC.

Inventor： WEI LIU ,  NAOMI YOSHIDA ,  MANDAR BALASAHEB PANDIT

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01J37/321 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/823828

Abstract: Embodiments of methods for removing carbon-containing films are provided herein. In some embodiments, a method for removing a carbon-containing layer includes providing an ammonia containing process gas to a process chamber having a substrate with a silicon oxide layer disposed atop the substrate and a carbon-containing layer disposed atop the silicon oxide layer disposed in the process chamber; providing RF power to the process chamber to ignite the ammonia containing process gas to form a plasma; and exposing the substrate to NH and/or NH2 radicals and hydrogen radicals formed in the plasma to remove the carbon-containing layer.

Abstract translation: 本文提供了用于除去含碳膜的方法的实施方案。 在一些实施方案中，用于除去含碳层的方法包括向具有衬底的处理室提供含氨工艺气体，所述衬底具有设置在衬底顶部的氧化硅层和设置在设置在衬底上的氧化硅层顶部的含碳层 处理室; 向处理室提供RF功率以点燃含氨工艺气体以形成等离子体; 并将衬底暴露于NH和/或NH 2基团和在等离子体中形成的氢原子以除去含碳层。

公开(公告)号：US20150332941A1

公开(公告)日：2015-11-19

申请号：US14719546

申请日：2015-05-22

Applicant: APPLIED MATERIALS, INC.

Inventor： JEFFREY TOBIN ,  BERNARD L. HWANG ,  CANFENG LAI ,  LARA HAWRYLCHAK ,  WEI LIU ,  JOHANES SWENBERG

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6831

Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.

Abstract translation: 提供了用于处理基板的方法和装置。 在一些实施例中，处理具有第一层的衬底的方法可以包括将衬底支撑件顶部放置在具有施加到其上的偏置功率的离子屏蔽体下方的处理室的较低处理容积中，离子屏蔽包括基本平坦的 平行于衬底支撑件支撑的构件和穿过平坦构件形成的多个孔，其中孔径与厚度平坦构件的比例为约10:1-1:10; 将处理气体流入离子屏蔽物上方的上部处理体积; 从所述上加工容积内的工艺气体形成等离子体; 用通过离子屏蔽的中性自由基处理第一层; 并且在处理第一层的同时将基底加热至高达约550摄氏度的温度。

公开(公告)号：US20150102396A1

公开(公告)日：2015-04-16

申请号：US14515767

申请日：2014-10-16

Applicant: APPLIED MATERIALS, INC.

Inventor： UDAYAN GANGULY ,  YOSHITAKA YOKOTA ,  JING TANG ,  SUNDERRAJ THIRUPAPULIYUR ,  CHRISTOPHER SEAN OLSEN ,  SHIYU SUN ,  TZE WING POON ,  WEI LIU ,  JOHANES SWENBERG ,  VICKY U. NGUYEN ,  SWAMINATHAR SRINIVASAN ,  JACOB NEWMAN

IPC: H01L29/788 ,  H01L21/67

CPC classification number: H01L29/788 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76232 ,  H01L27/11521

Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

Abstract translation: 适用于窄间距应用的半导体器件及其制造方法在本文中描述。 在一些实施例中，半导体器件可以包括具有接近浮动栅极的基极的第一宽度的浮动栅极，该第一宽度大于靠近浮动栅极顶部的第二宽度。 在一些实施例中，成形材料层的方法可以包括（a）氧化材料层的表面以以初始速率形成氧化物层; （b）当氧化速率为初始速率的约90％或更低时终止氧化物层的形成; （c）通过蚀刻工艺去除至少一些氧化物层; 和（d）重复（a）到（c）直到材料层形成所需的形状。 在一些实施例中，材料层可以是半导体器件的浮置栅极。

公开(公告)号：US20140099795A1

公开(公告)日：2014-04-10

申请号：US14044090

申请日：2013-10-02

Applicant: APPLIED MATERIALS, INC.

Inventor： JEFFREY TOBIN ,  BERNARD L. HWANG ,  CANFENG LAI ,  LARA HAWRYLCHAK ,  WEI LIU ,  JOHANES SWENBERG

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0217 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/6831

Abstract: Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate having a first layer may include disposing a substrate atop a substrate support in a lower processing volume of a process chamber beneath an ion shield having a bias power applied thereto, the ion shield comprising a substantially flat member supported parallel to the substrate support, and a plurality of apertures formed through the flat member, wherein the ratio of the aperture diameter to the thickness flat member ranges from about 10:1-1:10; flowing a process gas into an upper processing volume above the ion shield; forming a plasma from the process gas within the upper processing volume; treating the first layer with neutral radicals that pass through the ion shield; and heating the substrate to a temperature of up to about 550 degrees Celsius while treating the first layer.

Abstract translation: 提供了用于处理基板的方法和装置。 在一些实施例中，处理具有第一层的衬底的方法可以包括将衬底支撑件顶部放置在具有施加到其上的偏置功率的离子屏蔽体下方的处理室的较低处理容积内，离子屏蔽包括基本平坦的 平行于衬底支撑件支撑的构件和穿过平坦构件形成的多个孔，其中孔径与厚度平坦构件的比例为约10:1-1:10; 将处理气体流入离子屏蔽物上方的上部处理体积; 从所述上加工容积内的工艺气体形成等离子体; 用通过离子屏蔽的中性自由基处理第一层; 并且在处理第一层的同时将基底加热至高达约550摄氏度的温度。

公开(公告)号：US20140273517A1

公开(公告)日：2014-09-18

申请号：US14195273

申请日：2014-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： THERESA KRAMER GUARINI ,  WEI LIU

IPC: H01L21/02

CPC classification number: H01L21/02269 ,  C23C16/56 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L21/67115 ,  H01L21/6831 ,  H01L21/68742 ,  H01L21/68757

Abstract: Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a first temperature; and exposing the first layer to an RF plasma formed from a process gas comprising ammonia (NH3) to transform the first layer into a nitrogen-containing layer, wherein the plasma has an ion energy of less than about 8 eV.

Abstract translation: 本文提供了形成含氮层的方法和装置。 在一些实施例中，一种方法包括将其上设置有第一层的衬底放置在处理室的衬底支撑件上; 将衬底加热至第一温度; 以及将所述第一层暴露于由包含氨（NH 3）的工艺气体形成的RF等离子体，以将所述第一层转化为含氮层，其中所述等离子体的离子能量小于约8eV。