公开(公告)号：US20170323781A1

公开(公告)日：2017-11-09

申请号：US15587997

申请日：2017-05-05

Applicant: APPLIED MATERIALS, INC.

Inventor： JESSICA SEVANNE KACHIAN ,  TOBIN KAUFMAN-OSBORN ,  DAVID THOMPSON

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/455 ,  C23C16/40 ,  C23C16/04 ,  C23C16/02

CPC classification number: H01L21/02118 ,  C23C16/0272 ,  C23C16/04 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/76849

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include net chemisorption of a self-assembled monolayer on the second surface to prevent deposition of the film on the second surface.

公开(公告)号：US20160004259A1

公开(公告)日：2016-01-07

申请号：US14476215

申请日：2014-09-03

Applicant: APPLIED MATERIALS, INC.

Inventor： MARTIN JEFF SALINAS ,  YOUQUN DONG ,  DAVID THOMPSON ,  MEI CHANG

IPC: G05D11/00 ,  F17C6/00

CPC classification number: F17C6/00 ,  C23C16/4481 ,  F24F6/025 ,  G05D9/02 ,  G05D9/12 ,  Y10T137/6416 ,  Y10T137/7306

Abstract: Methods and apparatus for chemical delivery are provided herein. In some embodiments, a first reservoir holds a first volume of fluid, receives a carrier gas, and outputs the carrier gas together with vapor derived from the first volume of fluid. A second reservoir holds a second volume of fluid and is capable of delivering a part of the second volume of fluid to the first reservoir. A self-regulating tube extends from the first reservoir to a region above the second volume of fluid in the second reservoir.

Abstract translation: 本文提供了用于化学物质输送的方法和装置。 在一些实施例中，第一储存器容纳第一体积的流体，接收载气，并将载气与来自第一体积流体的蒸气一起输出。 第二储存器容纳第二体积的流体，并且能够将第二体积的流体的一部分输送到第一储存器。 自调节管从第一储存器延伸到第二储存器中的第二体积流体上方的区域。

公开(公告)号：US20150294906A1

公开(公告)日：2015-10-15

申请号：US14300773

申请日：2014-06-10

Applicant: APPLIED MATERIALS, INC.

Inventor： LIQI WU ,  SANG HO YU ,  KAZUYA DAITO ,  KIE JIN PARK ,  KAI WU ,  DAVID THOMPSON

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/06 ,  C23C16/45536 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876

Abstract: Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.

Abstract translation: 本文提供了用于生产中间线（MOL）应用的金属有机钨的方法。 在一些实施例中，处理衬底的方法包括向处理室提供衬底，其中衬底包括形成在衬底的电介质层的第一表面中的特征; 将衬底暴露于由包括金属有机钨前体的第一气体形成的等离子体，以在该介电层的顶部和特征内形成钨阻挡层，其中在形成钨阻挡层期间处理室的温度小于约 225摄氏度; 以及在所述钨阻挡层上沉积钨填充层以将所述特征填充到所述第一表面。

公开(公告)号：US20150262828A1

公开(公告)日：2015-09-17

申请号：US14627861

申请日：2015-02-20

Applicant: APPLIED MATERIALS, INC.

Inventor： ADAM BRAND ,  NAOMI YOSHIDA ,  SESHADRI GANGULI ,  DAVID THOMPSON ,  MEI CHANG

IPC: H01L21/285 ,  H01L21/308 ,  H01L21/306 ,  H01L21/8238 ,  H01L29/423 ,  H01L21/3065

CPC classification number: H01L21/823842 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66606 ,  H01L29/66795 ,  H01L29/7833 ,  H01L29/785 ,  H01L29/78696

Abstract: Methods for forming a multi-threshold voltage device on a substrate are provided herein. In some embodiments, the method of forming a multi-threshold voltage device may include (a) providing a substrate having a first layer disposed thereon, wherein the substrate comprises a first feature and a second feature disposed within the first layer; (b) depositing a blocking layer atop the substrate; (c) selectively removing a portion of the blocking layer from atop the substrate to expose the first feature; (d) selectively depositing a first work function layer atop the first feature; (e) removing a remainder of the blocking layer to expose the second feature; and (f) depositing a second work function layer atop the atop the first work function layer and the second feature.

Abstract translation: 本文提供了在基板上形成多阈值电压装置的方法。 在一些实施例中，形成多阈值电压装置的方法可以包括（a）提供其上设置有第一层的衬底，其中衬底包括设置在第一层内的第一特征和第二特征; （b）在衬底顶上沉积阻挡层; （c）从所述衬底顶部选择性地去除所述阻挡层的一部分以暴露所述第一特征; （d）在所述第一特征顶部选择性地沉积第一功函数层; （e）去除所述阻挡层的剩余部分以暴露所述第二特征; 以及（f）在第一功能层和第二特征顶部之上沉积第二功函数层。