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    SELECTIVELY GROUNDABLE COVER RING FOR SUBSTRATE PROCESS CHAMBERS
    1.
    发明申请
    SELECTIVELY GROUNDABLE COVER RING FOR SUBSTRATE PROCESS CHAMBERS 有权
    用于衬底过程池的选择性接地套管

    公开(公告)号：US20140262763A1

    公开(公告)日：2014-09-18

    申请号：US13831363

    申请日：2013-03-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： MUHAMMAD M. RASHEED ,  KIRANKUMAR SAVANDAIAH ,  WILLIAM JOHANSON ,  ZHENBIN GE ,  GOICHI YOSHIDOME

    IPC: H01L21/67

    CPC classification number: H01L21/68735 ,  C23C14/34 ,  C23C14/50 ,  H01J37/32651 ,  H01J37/32715

    Abstract: Embodiments of a process kit for substrate process chambers are provided herein. In some embodiments, a process kit for a substrate process chamber may include a ring having a body and a lip extending radially inward from the body, wherein the body has a first annular channel formed in a bottom of the body; an annular conductive shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first annular channel of the ring; and a conductive member electrically coupling the ring to the conductive shield when the ring is disposed on the conductive shield.

    Abstract translation: 本文提供了用于基板处理室的处理套件的实施例。 在一些实施例中，用于衬底处理室的处理套件可以包括具有本体和从主体径向向内延伸的唇缘的环，其中主体具有形成在主体的底部中的第一环形通道; 环形导电屏蔽件，其具有下部向内延伸的凸缘，其终止于构造成与环的第一环形通道相接合的向上延伸部分; 以及当所述环设置在所述导电屏蔽上时，所述导电构件将所述环电耦合到所述导电屏蔽层。

    APPARATUS FOR GAS INJECTION IN A PHYSICAL VAPOR DEPOSITION CHAMBER
    4.
    发明申请
    APPARATUS FOR GAS INJECTION IN A PHYSICAL VAPOR DEPOSITION CHAMBER 有权
    用于气体注入室内气体沉积室的装置

    公开(公告)号：US20140261177A1

    公开(公告)日：2014-09-18

    申请号：US13836996

    申请日：2013-03-15

    Applicant: APPLIED MATERIALS, INC.

    Inventor： MUHAMMAD RASHEED ,  KIRANKUMAR SAVANDAIAH ,  ALAN A. RITCHIE ,  ISAAC PORRAS ,  KEITH A. MILLER

    IPC: C23C16/04

    CPC classification number: C23C14/0063 ,  C23C14/35 ,  H01J37/3244 ,  H01J37/3405

    Abstract: Apparatus for physical vapor deposition are provided herein. In some embodiments, a shield for use in a physical vapor deposition chamber, comprises an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, an annular groove formed in an inner wall of the one-piece body, and a plurality of gas distribution vents disposed along the annular feature and formed through the one-piece body, wherein the plurality of gas distribution vents are spaced apart from each other to distribute gases into the inner volume in a desired pattern.

    Abstract translation: 本文提供用于物理气相沉积的装置。 在一些实施例中，用于物理气相沉积室的屏蔽件包括具有内部容积，顶部开口和底部开口的环形一体式主体，其中环形一体式主体的底部包括内部向上延伸的内部 U形部分，形成在一体式主体的内壁中的环形槽和沿着环形特征设置并且通过一体式形成的多个气体分配通气口，其中多个气体分配通风口间隔开 彼此分开，以期望的图案将气体分配到内部体积中。

    PROCESS KIT SHIELD FOR PLASMA ENHANCED PROCESSING CHAMBER
    5.
    发明申请
    PROCESS KIT SHIELD FOR PLASMA ENHANCED PROCESSING CHAMBER 有权
    用于等离子体增强加工室的工艺套件

    公开(公告)号：US20140158049A1

    公开(公告)日：2014-06-12

    申请号：US14178146

    申请日：2014-02-11

    Applicant: APPLIED MATERIALS, INC.

    Inventor： MUHAMMAD RASHEED ,  DONNY YOUNG ,  KIRANKUMAR SAVANDAIAH ,  UDAY PAI

    IPC: C23C16/44 ,  C23C14/34

    CPC classification number: H01J37/3411 ,  C23C14/34 ,  C23C14/35 ,  C23C14/564 ,  C23C16/44 ,  H01J19/54 ,  H01J37/32495 ,  Y10T428/12528

    Abstract: Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

    Abstract translation: 本文公开了用于处理衬底的设备。 在一些实施例中，一种装置包括具有第一端，第二端和设置在第一和第二端之间的一个或多个第一侧壁的第一屏蔽，其中第一端构造成与处理室的第一支撑构件 以将所述第一屏蔽件支撑在使得所述一个或多个第一侧壁围绕所述处理室的第一体积的位置; 以及第二屏蔽，其具有设置在所述第二屏蔽件的第一端和第二端之间并且围绕所述第一屏蔽件的第一端，第二端和一个或多个第二侧壁，其中所述第二屏蔽的第一端被配置为与 处理室的第二支撑构件以支撑第二屏蔽，使得第二屏蔽件接触第一屏蔽件以在其间形成密封。

    APPARATUS FOR HIGH COMPRESSIVE STRESS FILM DEPOSITION TO IMPROVE KIT LIFE
    6.
    发明申请
    APPARATUS FOR HIGH COMPRESSIVE STRESS FILM DEPOSITION TO IMPROVE KIT LIFE 审中-公开
    用于高压应力膜沉积的装置，以改善药盒生命

    公开(公告)号：US20160104603A1

    公开(公告)日：2016-04-14

    申请号：US14864031

    申请日：2015-09-24

    Applicant: APPLIED MATERIALS, INC.

    Inventor： JUNQI WEI ,  KIRANKUMAR SAVANDAIAH ,  ANANTHKRISHNA JUPUDI ,  ZHITAO CAO ,  YUEH SHENG OW

    IPC: H01J37/32

    CPC classification number: H01J37/3288 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32642

    Abstract: Apparatus for extending process kit components lifetimes are disclosed. In some embodiments, a process kit includes: a first ring having an inner wall defining an inner diameter, an outer wall defining an outer diameter, an upper surface between the inner wall and the outer wall, and an opposing lower surface between the inner wall and the outer wall, wherein a first portion of the upper surface proximate the inner wall is concave, and wherein a second portion of the upper surface extends horizontally away from the first portion; and a second ring having an upper surface and an opposing lower surface, wherein a first portion of the lower surface is configured to rest upon the second portion of the first ring, wherein a second portion of the lower surface is convex and extends into but does not touch the concave first portion of the upper surface of the first ring.

    Abstract translation: 公开了用于延长工艺组件组件寿命的装置。 在一些实施例中，处理套件包括：第一环，其具有限定内径的内壁，限定外径的外壁，内壁和外壁之间的上表面，以及位于内壁和内壁之间的相对的下表面 和所述外壁，其中所述上表面的靠近所述内壁的第一部分是凹形的，并且其中所述上表面的第二部分水平地延伸离开所述第一部分; 以及具有上表面和相对的下表面的第二环，其中所述下表面的第一部分构造成搁置在所述第一环的所述第二部分上，其中所述下表面的第二部分是凸的并延伸到 不接触第一环的上表面的凹形第一部分。

    TARGET RETAINING APPARATUS
    7.
    发明申请
    TARGET RETAINING APPARATUS 审中-公开
    目标保持装置

    公开(公告)号：US20150203960A1

    公开(公告)日：2015-07-23

    申请号：US14600915

    申请日：2015-01-20

    Applicant: APPLIED MATERIALS, INC

    Inventor： SRINIVASA YEDLA ,  SUNDARAPANDIAN REDDY ,  UDAY PAI ,  KIRANKUMAR SAVANDAIAH ,  THANH X. NGUYEN ,  MUHAMMAD M. RASHEED ,  JALLEPALLY RAVI

    IPC: C23C14/50 ,  B25B5/08

    CPC classification number: H01J37/3435

    Abstract: Embodiments of target retaining apparatus and substrate processing chambers incorporating same are provided herein. In some embodiments, a target retaining apparatus includes a housing including a first slot and a second slot; a cam movably disposed in the housing, wherein movement of the cam is constrained along the first slot; a retaining arm movably coupled to the cam, wherein movement of the retaining arm is constrained along the second slot; a linking member including a first end rotatably coupled to the cam and a second end rotatably coupled to the retaining arm; and a biasing element biasing the cam towards a first position in which the retaining arm extends away from the housing.

    Abstract translation: 本文提供了包含相同的目标保持装置和基板处理室的实施例。 在一些实施例中，目标保持装置包括壳体，其包括第一槽和第二槽; 可移动地设置在所述壳体中的凸轮，其中所述凸轮的运动沿着所述第一狭槽被限制; 可移动地联接到所述凸轮的保持臂，其中所述保持臂的运动沿着所述第二狭槽被限制; 连接构件，其包括可旋转地联接到所述凸轮的第一端和可旋转地联接到所述保持臂的第二端; 以及将所述凸轮偏压到所述保持臂远离所述壳体延伸的第一位置的偏压元件。

    ONE-PIECE PROCESS KIT SHIELD
    9.
    发明申请
    ONE-PIECE PROCESS KIT SHIELD 审中-公开
    一体式工艺包装

    公开(公告)号：US20160189938A1

    公开(公告)日：2016-06-30

    申请号：US14960890

    申请日：2015-12-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： KIRANKUMAR SAVANDAIAH ,  RYAN HANSON ,  RUXIAO AN

    IPC: H01J37/34

    Abstract: Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments, a one-piece process kit shield includes a cylindrical body having an upper portion and a lower portion; a heat transfer channel extending through the upper portion; and a cover ring section extending radially inward from the lower portion.

    Abstract translation: 本文提供了处理套件屏蔽和结合相同处理室的实施例。 在一些实施例中，一体式加工套件护罩包括具有上部和下部的圆筒体; 延伸穿过上部的传热通道; 以及从下部径向向内延伸的盖环部。

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