公开(公告)号：US20030213434A1

公开(公告)日：2003-11-20

申请号：US10150458

申请日：2002-05-17

申请人： APPLIED MATERIALS, INC.

发明人： Sudhir Gondhalekar ,  Tom K. Cho ,  Rolf Guenther ,  Steve H. Kim ,  Mehrdad Moshfegh ,  Shigeru Takehiro ,  Thomas Kring ,  Tetsuya Ishikawa

IPC分类号： C23C016/00

CPC分类号： H01J37/32522 ,  C23C16/507 ,  H01J37/321

摘要： The present invention is directed to an upper chamber design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. Embodiments of the invention improve temperature control of the upper chamber and improve particle performance by reducing or minimizing the temperature fluctuations on the dome between the deposition and non-deposition cycles. In accordance with an aspect of the present invention, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a substantially flat dome top. A top RF coil is disposed above the dome top, and has an outer loop which is larger in size than the substrates to be processed in the chamber. A cold plate is disposed above the top RF coil, and is larger in size than the substrates to be processed in the chamber.

摘要翻译： 本发明涉及一种等离子体CVD室的上室设计，其提供在衬底上形成薄CVD膜的更均匀的条件。 本发明的实施例通过减少或最小化沉积和非沉积循环之间的圆顶上的温度波动来改善上室的温度控制并提高颗粒性能。 根据本发明的一个方面，用于处理半导体衬底的设备包括限定其中的等离子体处理区域的室。 该室包括底部，侧壁和设置在侧壁顶部的圆顶。 圆顶具有基本平坦的圆顶。 顶部RF线圈设置在圆顶顶部上方，并且具有比在腔室中要处理的基板尺寸更大的外环。 冷板设置在顶部RF线圈上方，并且尺寸大于在腔室中要处理的基板。

公开(公告)号：US20030211757A1

公开(公告)日：2003-11-13

申请号：US10141391

申请日：2002-05-07

申请人： APPLIED MATERIALS, INC.

发明人： Sudhir Gondhalekar ,  Dongqing Li ,  Canfeng Lai ,  Zhengquan Tan ,  Steve H. Kim ,  Alexander Veyster

IPC分类号： H01L021/31 ,  H01L021/469 ,  H01L021/306 ,  C23C016/00

CPC分类号： C23C16/45563 ,  C23C16/4583 ,  C23C16/466 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/32532 ,  H01L21/28556 ,  H01L21/67069

摘要： A substrate support utilized in high-density plasma chemical vapor deposition (HDP-CVD) processing functions as a radio frequency (RF) electrode (e.g., a bias RF cathode). An upper surface of the substrate support has a central upper surface portion and a peripheral upper surface portion, with the peripheral upper surface portion recessed relative to the central upper surface portion. The upper surface of the support extends beyond an outer edge of the substrate when the substrate is positioned on the substrate support. This extension in the support upper surface may enhance process performance by reducing electric field edge effects, as well as by improving directional distribution of ions traveling to the substrate. Since the peripheral upper surface portion is recessed relative to the central upper surface portion, a detachable shield can be disposed on the peripheral upper surface portion for preventing undesirable deposition on, or chemical attack of, the peripheral upper surface portion, without interfering with positioning of the substrate.

摘要翻译： 用于高密度等离子体化学气相沉积（HDP-CVD）处理的衬底支撑件用作射频（RF）电极（例如，偏压RF阴极）。 基板支撑件的上表面具有中心上表面部分和周边上表面部分，周边上表面部分相对于中央上表面部分凹陷。 当衬底定位在衬底支撑件上时，支撑件的上表面延伸超过衬底的外边缘。 支撑上表面的这种延伸可以通过减小电场边缘效应以及改善行进到基底的离子的方向分布来增强工艺性能。 由于外周上表面部分相对于中央上表面部分凹陷，所以可以在外围上表面部分设置可拆卸的屏蔽件，以防止周边上表面部分的不希望的沉积或化学侵蚀，而不会干扰定位 底物。