公开(公告)号：US20030136332A1

公开(公告)日：2003-07-24

申请号：US10057014

申请日：2002-01-24

申请人： APPLIED MATERIALS INC., A Delaware corporation

发明人： Padmanabhan Krishnaraj ,  Pavel Ionov ,  Canfeng Lai ,  Michael Santiago Cox ,  Shamouil Shamouilian

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/509 ,  C30B25/105 ,  H01J37/32935 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/76837

摘要： A continuous in situ process of deposition, etching, and deposition is provided for forming a film on a substrate using a plasma process. The etch-back may be performed without separate plasma activation of the etchant gas. The sequence of deposition, etching, and deposition permits features with high aspect ratios to be filled, while the continuity of the process results in improved uniformity.

摘要翻译： 提供了沉积，蚀刻和沉积的连续原位工艺，用于使用等离子体工艺在衬底上形成膜。 可以在没有蚀刻剂气体的单独的等离子体激活的情况下执行回蚀。 沉积，蚀刻和沉积的顺序允许填充高纵横比的特征，而过程的连续性导致改善的均匀性。

公开(公告)号：US20040226511A1

公开(公告)日：2004-11-18

申请号：US10768601

申请日：2004-01-30

申请人： Applied Materials, Inc.

发明人： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

IPC分类号： C23C016/00

CPC分类号： H01J37/32431

摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

公开(公告)号：US20030036272A1

公开(公告)日：2003-02-20

申请号：US10159794

申请日：2002-05-30

申请人： APPLIED MATERIALS, INC.

发明人： Shamouil Shamouilian ,  Canfeng Lai ,  Michael Santiago Cox ,  Padmanabhan Krishnaraj ,  Tsutomu Tanaka ,  Sebastien Raoux ,  Peter I. Porshnev ,  Thomas Nowak

IPC分类号： H01L021/302

CPC分类号： B08B7/0035 ,  B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45593 ,  H01J37/3244 ,  H01J37/32844 ,  H01J2237/335 ,  Y02C20/30

摘要： A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.

摘要翻译： 清洁半导体制造处理室的方法包括清洁气体组分的再循环。 因此，有效地利用输入清洁气体，并且减少不期望的排放。 该方法包括使清洁气体流到处理室的入口，并将处理室的表面暴露于清洁气体以清洁表面，从而产生反应产物。 该方法还包括从处理室的出口除去包括反应产物的出口气体，将至少一部分反应产物与出口气体分离，并将出口气体的一部分再循环到处理室的入口。

公开(公告)号：US20040000321A1

公开(公告)日：2004-01-01

申请号：US10187817

申请日：2002-07-01

申请人： Applied Materials, Inc.

发明人： Zhenjiang Cui ,  Michael S. Cox ,  Canfeng Lai ,  Paddy Krishnaraj

IPC分类号： B08B005/00

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J2237/022 ,  Y10S438/905

摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber. According to one embodiment the process comprises performing a substrate processing operation on the substrate within the substrate processing chamber and then transferring the substrate out of the substrate processing chamber; flowing a first etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to remove a first portion of the unwanted deposition build-up; and thereafter, flowing a second etchant gas into the substrate processing chamber and forming a plasma within the substrate processing chamber from the second gas in order to remove a second portion of the unwanted deposition build-up.

摘要翻译： 一种用于从衬底处理室的一个或多个内表面去除不想要的沉积物的方法。 根据一个实施例，该方法包括在衬底处理室内的衬底上执行衬底处理操作，然后将衬底转移出衬底处理室; 将第一蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应性物质并将反应物质输送到基底处理室中以去除不需要的沉积物堆积的第一部分; 然后将第二蚀刻剂气体流入基板处理室，并从第二气体在基板处理室内形成等离子体，以便去除不需要的沉积物积聚的第二部分。

公开(公告)号：US20030085205A1

公开(公告)日：2003-05-08

申请号：US09839360

申请日：2001-04-20

申请人： Applied Materials, Inc.

发明人： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

IPC分类号： C23F001/00 ,  C23C016/00 ,  B23K010/00

CPC分类号： H01J37/32431

摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

摘要翻译： 使用环形铁芯的变压器耦合等离子体源沿着环面的中心轴形成具有高密度离子的等离子体。 在一个实施例中，等离子体发生器的芯以垂直对准堆叠以增强等离子体的方向性和发电效率。 在另一个实施例中，芯以横向阵列布置成等离子体发生板，其可被缩放以适应各种尺寸的衬底，包括非常大的衬底。 所获得的等离子体的对称性允许同时处理两个基板，一个在等离子体发生器的两侧。

公开(公告)号：US20030039766A1

公开(公告)日：2003-02-27

申请号：US09938399

申请日：2001-08-23

申请人： Applied Materials, Inc.

发明人： Michael Barnes ,  Michael S. Cox ,  Canfeng Lai ,  John Parks

IPC分类号： C23C016/00 ,  H01L021/31 ,  C30B001/00

CPC分类号： H01L21/67167 ,  C23C16/54 ,  C30B25/08 ,  H01L21/67184 ,  Y10S414/139

摘要： A substrate processing apparatus is disclosed. In one embodiment, the apparatus includes a first atmospheric deposition station and a second atmospheric deposition station. The second atmospheric deposition station comprises an atmospheric pressure vapor deposition chamber. A substrate handling system is adapted to transfer substrates between the first and the second atmospheric deposition stations.

摘要翻译： 公开了一种基板处理装置。 在一个实施例中，该装置包括第一大气沉积站和第二大气沉积站。 第二大气沉积站包括大气压气相沉积室。 衬底处理系统适于在第一和第二大气沉积站之间传送衬底。

公开(公告)号：US20040226658A1

公开(公告)日：2004-11-18

申请号：US10769225

申请日：2004-01-30

申请人： Applied Materials, Inc.

发明人： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

IPC分类号： C23F001/00

CPC分类号： H01J37/32431

摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

公开(公告)号：US20040185610A1

公开(公告)日：2004-09-23

申请号：US10769229

申请日：2004-01-30

申请人： Applied Materials, Inc.

发明人： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

IPC分类号： H01L021/8238

CPC分类号： H01J37/32431

摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

公开(公告)号：US20040182517A1

公开(公告)日：2004-09-23

申请号：US10769216

申请日：2004-01-30

申请人： Applied Materials, Inc.

发明人： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

IPC分类号： H01L021/306

CPC分类号： H01J37/32431

摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

公开(公告)号：US20030227283A1

公开(公告)日：2003-12-11

申请号：US10165489

申请日：2002-06-07

申请人： Applied Materials, Inc.

发明人： Michael S. Cox ,  Canfeng Lai ,  Qiwei Liang

IPC分类号： G01N027/00

CPC分类号： H01J37/32935 ,  H05H1/0006

摘要： A probe for measuring plasma properties in a processing chamber, comprises a conductive rod having a front portion and a rear portion. The front portion of the conductive rod comprises a probe surface adapted to be coplanar with an interior wall of the chamber. The probe also includes an insulating sheath circumscribing the conductive rod.

摘要翻译： 用于测量处理室中的等离子体特性的探针包括具有前部和后部的导电棒。 导电棒的前部包括适于与室的内壁共面的探针表面。 探头还包括一个围绕导电棒的绝缘护套。