公开(公告)号：US20030203637A1

公开(公告)日：2003-10-30

申请号：US10137132

申请日：2002-04-30

申请人： Applied Materials, Inc.

发明人： Zhong Qiang Hua ,  Dong Qing Li ,  Zhengquan Tan ,  Zhuang Li ,  Michael Chiu Kwan ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj

IPC分类号： H01L021/311

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/401 ,  C23C16/402 ,  C23C16/507 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229

摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.

摘要翻译： 一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。 在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。 氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。 在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

公开(公告)号：US20020187656A1

公开(公告)日：2002-12-12

申请号：US09854406

申请日：2001-05-11

申请人： Applied Materials, Inc.

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt ,  Tetsuya Ishikawa

IPC分类号： H01L021/31 ,  H01L021/469 ,  B05C011/00

CPC分类号： H01L21/02164 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

摘要： A method of forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The silicon oxide layer is formed by flowing a process gas including a silicon-containing source, an oxygen-containing source, an inert gas and a hydrogen-containing source into the substrate processing chamber and forming a high density plasma (i.e., a plasma having an ion density of at least 1null1011 ions/cm3) from the process gas to deposit said silicon oxide layer over said substrate. In one embodiment, the hydrogen-containing source in the process gas is selected from the group of H2, H2O, NH3, CH4 and C2H6.

摘要翻译： 在设置在高密度等离子体基板处理室中的基板上形成氧化硅层的方法。 氧化硅层通过将包含含硅源，含氧源，惰性气体和含氢源的处理气体流入基板处理室而形成，并形成高密度等离子体（即，具有 离子密度为至少1×10 11个离子/ cm 3），以将所述氧化硅层沉积在所述衬底上。 在一个实施方案中，工艺气体中的含氢源选自H 2，H 2 O，NH 3，CH 4和C 2 H 6。

公开(公告)号：US20030211757A1

公开(公告)日：2003-11-13

申请号：US10141391

申请日：2002-05-07

申请人： APPLIED MATERIALS, INC.

发明人： Sudhir Gondhalekar ,  Dongqing Li ,  Canfeng Lai ,  Zhengquan Tan ,  Steve H. Kim ,  Alexander Veyster

IPC分类号： H01L021/31 ,  H01L021/469 ,  H01L021/306 ,  C23C016/00

CPC分类号： C23C16/45563 ,  C23C16/4583 ,  C23C16/466 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/32532 ,  H01L21/28556 ,  H01L21/67069

摘要： A substrate support utilized in high-density plasma chemical vapor deposition (HDP-CVD) processing functions as a radio frequency (RF) electrode (e.g., a bias RF cathode). An upper surface of the substrate support has a central upper surface portion and a peripheral upper surface portion, with the peripheral upper surface portion recessed relative to the central upper surface portion. The upper surface of the support extends beyond an outer edge of the substrate when the substrate is positioned on the substrate support. This extension in the support upper surface may enhance process performance by reducing electric field edge effects, as well as by improving directional distribution of ions traveling to the substrate. Since the peripheral upper surface portion is recessed relative to the central upper surface portion, a detachable shield can be disposed on the peripheral upper surface portion for preventing undesirable deposition on, or chemical attack of, the peripheral upper surface portion, without interfering with positioning of the substrate.

摘要翻译： 用于高密度等离子体化学气相沉积（HDP-CVD）处理的衬底支撑件用作射频（RF）电极（例如，偏压RF阴极）。 基板支撑件的上表面具有中心上表面部分和周边上表面部分，周边上表面部分相对于中央上表面部分凹陷。 当衬底定位在衬底支撑件上时，支撑件的上表面延伸超过衬底的外边缘。 支撑上表面的这种延伸可以通过减小电场边缘效应以及改善行进到基底的离子的方向分布来增强工艺性能。 由于外周上表面部分相对于中央上表面部分凹陷，所以可以在外围上表面部分设置可拆卸的屏蔽件，以防止周边上表面部分的不希望的沉积或化学侵蚀，而不会干扰定位 底物。

公开(公告)号：US20030029475A1

公开(公告)日：2003-02-13

申请号：US10153315

申请日：2002-05-21

申请人： APPLIED MATERIALS, INC., A Delaware corporation

发明人： Zhong Qiang Hua ,  Zhengquan Tan ,  Zhuang Li ,  Kent Rossman

IPC分类号： C25F003/30 ,  C25F001/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  Y10S438/905

摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.

摘要翻译： 一种在将材料层沉积在设置在腔室中的衬底上之后，从衬底处理室的一个或多个内表面去除不想要的沉积积累的过程。 在一个实施例中，该方法包括将衬底转移出腔室; 将第一气体流入基板处理室，并在第一气体内在室内形成等离子体，以便加热室; 然后熄灭等离子体，将蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应物质并将反应物质输送到衬底处理室中以蚀刻不需要的沉积物积聚。

公开(公告)号：US20040152341A1

公开(公告)日：2004-08-05

申请号：US10763018

申请日：2004-01-21

申请人： Applied Materials, Inc.

发明人： Zhengquan Tan ,  Dongqing LI ,  Walter Zygmunt

IPC分类号： H01L021/31

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450null C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

摘要翻译： 一种在设置在高密度等离子体基板处理室中的基板上形成氧化硅层的方法。 该方法包括将包含含硅源，含氧源和含氟源的处理气体流入基板处理室并从所述处理气体形成等离子体。 在沉积所述氧化硅层期间将衬底加热到​​高于450℃的温度，并且沉积层的氟含量小于1.0原子％。

公开(公告)号：US20030159656A1

公开(公告)日：2003-08-28

申请号：US10397678

申请日：2003-03-25

申请人： Applied Materials, Inc.

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt ,  Tetsuya Ishikawa

IPC分类号： C23C016/00

CPC分类号： H01L21/02164 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

摘要： A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller operatively coupled to the gas distribution system and the high density plasma power source and a memory coupled to the controller. The memory includes computer instructions embodied in a computer-readable format. The computer instructions comprise (i) instructions that control the gas distribution system to flow a process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen-containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus and (ii) instructions that control the high density plasma source to form a plasma having an ion density of at least 1null1011 ions/cm3 from the process gas to deposit the silicon oxide layer over the substrate.

摘要翻译： 一种衬底处理设备，包括衬底处理室，可操作地耦合到腔室的气体分配系统，高密度等离子体电源，可操作地耦合到气体分配系统和高密度等离子体电源的控制器以及耦合到控制器的存储器 。 存储器包括以计算机可读格式体现的计算机指令。 计算机指令包括（i）控制气体分配系统以使包含硅烷气体，含氧源，惰性气体和含氢源（其为分子氢或氢化物气体）的工艺气体流动的指令 不包括硅，硼或磷，以及（ii）控制高密度等离子体源以形成离子浓度至少为1×10 11个离子/ cm 3离子浓度的等离子体的指令，以将氧化硅层沉积在衬底上。

公开(公告)号：US20020187655A1

公开(公告)日：2002-12-12

申请号：US09854083

申请日：2001-05-11

申请人： Applied Materials, Inc.

发明人： Zhengquan Tan ,  Dongqing Li ,  Walter Zygmunt

IPC分类号： H01L021/31 ,  H01L021/469

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450null C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

摘要翻译： 一种在设置在高密度等离子体基板处理室中的基板上形成氧化硅层的方法。 该方法包括将包含含硅源，含氧源和含氟源的处理气体流入基板处理室并从所述处理气体形成等离子体。 在沉积所述氧化硅层期间将衬底加热到​​高于450℃的温度，并且沉积层的氟含量小于1.0原子％。