公开(公告)号：US12183578B2

公开(公告)日：2024-12-31

申请号：US17459839

申请日：2021-08-27

Applicant: Applied Materials, Inc.

Inventor： Takehito Koshizawa ,  Rui Cheng ,  Tejinder Singh ,  Hidetaka Oshio

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

Abstract: In an embodiment, a method for forming features for semiconductor processing. A first mandrel and a second mandrel are formed on a substrate. A first spacer is formed along a first sidewall of the first mandrel, and a second spacer is formed along a second sidewall of the second mandrel. A gap is defined between the first spacer and the second spacer. The gap is filled by a gap-filling material. In some examples, the gap-filling material includes a doped silicon material. In some examples, the first spacer and the second spacer each include a doped silicon material.

公开(公告)号：US20210134807A1

公开(公告)日：2021-05-06

申请号：US17147001

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US11994800B2

公开(公告)日：2024-05-28

申请号：US18081499

申请日：2022-12-14

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Lifan Yan ,  Abhijit B. Mallick ,  Daniel Lee Diehl ,  Ho-yung Hwang ,  Jothilingam Ramalingam

IPC: G03F7/09 ,  G03F7/20 ,  H01L21/027 ,  H01L21/033 ,  H01L21/308

CPC classification number: G03F7/094 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/3081 ,  G03F7/20

Abstract: Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.

公开(公告)号：US11638374B2

公开(公告)日：2023-04-25

申请号：US17720465

申请日：2022-04-14

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/10 ,  H01L21/02

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US11550222B2

公开(公告)日：2023-01-10

申请号：US16890867

申请日：2020-06-02

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Lifan Yan ,  Abhijit B. Mallick ,  Daniel Lee Diehl ,  Ho-yung Hwang ,  Jothilingam Ramalingam

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  G03F7/20

Abstract: Embodiments of the present disclosure generally relate to a multilayer stack used as a mask in extreme ultraviolet (EUV) lithography and methods for forming a multilayer stack. In one embodiment, the method includes forming a carbon layer over a film stack, forming a metal rich oxide layer on the carbon layer by a physical vapor deposition (PVD) process, forming a metal oxide photoresist layer on the metal rich oxide layer, and patterning the metal oxide photoresist layer. The metal oxide photoresist layer is different from the metal rich oxide layer and is formed by a process different from the PVD process. The metal rich oxide layer formed by the PVD process improves adhesion of the metal oxide photoresist layer and increases the secondary electrons during EUV lithography, which leads to decreased EUV dose energies.

公开(公告)号：US11495461B2

公开(公告)日：2022-11-08

申请号：US16800351

申请日：2020-02-25

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Suketu Arun Parikh ,  Daniel Lee Diehl ,  Michael Anthony Stolfi ,  Jothilingam Ramalingam ,  Yong Cao ,  Lifan Yan ,  Chi-I Lang ,  Hoyung David Hwang

IPC: H01L21/033 ,  H01L21/311

Abstract: Methods for forming a film stack comprising a hardmask layer and etching such hardmask layer to form features in the film stack are provided. The methods described herein facilitate profile and dimension control of features through a proper profile management scheme formed in the film stack. In one or more embodiments, a method for etching a hardmask layer includes forming a hardmask layer on a substrate, where the hardmask layer contains a metal-containing material containing a metal element having an atomic number greater than 28, supplying an etching gas mixture to the substrate, and etching the hardmask layer exposed by a photoresist layer.

公开(公告)号：US10910381B2

公开(公告)日：2021-02-02

申请号：US16527915

申请日：2019-07-31

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/10 ,  H01L21/02 ,  H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US20220238531A1

公开(公告)日：2022-07-28

申请号：US17720465

申请日：2022-04-14

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-Yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US11335690B2

公开(公告)日：2022-05-17

申请号：US17147001

申请日：2021-01-12

Applicant: Applied Materials, Inc.

Inventor： Tejinder Singh ,  Takehito Koshizawa ,  Abhijit Basu Mallick ,  Pramit Manna ,  Nancy Fung ,  Eswaranand Venkatasubramanian ,  Ho-yung David Hwang ,  Samuel E. Gottheim

IPC: H01L27/10 ,  H01L21/02 ,  H01L27/108

Abstract: Apparatuses and methods to provide a patterned substrate are described. A plurality of patterned and spaced first lines and carbon material lines and formed on the substrate surface by selectively depositing and etching films extending in a first direction and films extending in a second direction that crosses the first direction to pattern the underlying structures.

公开(公告)号：US10927451B2

公开(公告)日：2021-02-23

申请号：US16541688

申请日：2019-08-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Bencherki Mebarki ,  Byeong Chan Lee ,  Huixiong Dai ,  Tejinder Singh ,  Joung Joo Lee ,  Xianmin Tang

IPC: C23C14/54 ,  C23C14/58 ,  C23C14/34 ,  H01L21/02

Abstract: Methods and apparatus for processing a substrate. The method, for example, includes directing a stream of material from a PVD source at a first non-perpendicular angle to selectively deposit the material on a top portion of one or more features on the substrate and form a first overhang and a second overhang extending beyond a third sidewall and a fourth sidewall that are arranged parallel and opposite to each other and at non-zero angles to a first sidewall and a second sidewall, the first sidewall and the second sidewall defining a length of the one or more features, and the third sidewall and fourth sidewall defining a width of the one or more features; performing an etch process to selectively remove some of the first sidewall and the second sidewall while keeping the third sidewall and fourth sidewall in intact and maintaining the width of the one or more features.