公开(公告)号：US20240254645A1

公开(公告)日：2024-08-01

申请号：US18160912

申请日：2023-01-27

Applicant: APPLIED Materials, Inc.

Inventor： Jing Xu ,  John Klocke

IPC: C25D3/38 ,  C25D5/02 ,  C25D5/10 ,  C25D5/34 ,  C25D7/12 ,  H01L21/02 ,  H01L21/768

CPC classification number: C25D3/38 ,  C25D5/02 ,  C25D5/10 ,  C25D5/34 ,  C25D7/12 ,  H01L21/02002 ,  H01L21/76879

Abstract: A semiconductor wafer, including a substrate, at least one via formed in the substrate, and copper electroplating inside the at least one via, where the copper electroplating comprises a first layer of nanotwin copper, and a second layer of bulk copper. Further, a method of making a semiconductor wafer, the method comprising providing a substrate; etching the substrate to form at least one via; and depositing copper electroplating inside the at least one via, wherein the copper electroplating comprises a first layer of nanotwin copper, and a second layer of bulk copper.

公开(公告)号：US20140262794A1

公开(公告)日：2014-09-18

申请号：US13835870

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Daniel K. Gebregziabiher ,  John Klocke ,  Charles Sharbono ,  Chandru Thambidurai ,  David J. Erickson

IPC: C25D21/12 ,  C25D7/12 ,  C25D5/18

CPC classification number: C25D21/12 ,  C25D5/18 ,  C25D7/12 ,  H01L21/2885 ,  H01L21/76898

Abstract: A method for electroplating a wafer detects plating bath failure based on a voltage change. The method is useful in plating wafers having TSV features. Voltage of each anode of a plating processor may be monitored. An abrupt drop in voltage signals a bath failure resulting from conversion of an accelerator such as SPS to it's by products MPS. Bath failure is delayed or avoided by current pulsing or current ramping. An improved plating bath has a catholyte with a very low acid concentration.

Abstract translation: 基于电压变化的电镀电镀方法检测电镀槽故障。 该方法在具有TSV特征的电镀晶片中是有用的。 可以监测电镀处理器的每个阳极的电压。 电压的突然下降表明由诸如SPS的加速器转换为由产品MPS引起的浴槽故障。 通过当前的脉冲或电流斜坡延迟或避免浴液故障。 改进的电镀浴具有非常低的酸浓度的阴极电解液。