公开(公告)号：US20220127747A1

公开(公告)日：2022-04-28

申请号：US17078413

申请日：2020-10-23

Applicant: Applied Materials, Inc.

Inventor： Nolan L. Zimmerman ,  Charles Sharbono ,  Gregory J. Wilson ,  Paul R. McHugh ,  Paul Van Valkenburg ,  Deepak Saagar Kalaikadal ,  Kyle M. Hanson

IPC: C25D17/10 ,  C25D17/00 ,  C25D21/12

Abstract: Electroplating systems may include an electroplating chamber. The systems may also include a replenish assembly fluidly coupled with the electroplating chamber. The replenish assembly may include a first compartment housing anode material. The first compartment may include a first compartment section in which the anode material is housed and a second compartment section separated from the first compartment section by a divider. The replenish assembly may include a second compartment fluidly coupled with the electroplating chamber and electrically coupled with the first compartment. The replenish assembly may also include a third compartment electrically coupled with the second compartment, the third compartment including an inert cathode.

公开(公告)号：US09922874B2

公开(公告)日：2018-03-20

申请号：US15200836

申请日：2016-07-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi Lianto ,  Sam Lee ,  Charles Sharbono ,  Marvin Louis Bernt ,  Guan Huei See ,  Arvind Sundarrajan

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76879 ,  H01L21/76804 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329

Abstract: A method of processing a semiconductor substrate includes: immersing a substrate in a first bath, wherein the substrate comprises a barrier layer, a conductive seed layer, and a patterned photoresist layer defining an opening; providing a first electric current between the conductive seed layer and a first anode disposed in electrical contact with the first bath to deposit a conductive material within the opening; stripping the patterned photoresist layer; immersing the substrate in a second bath; providing a second electric current that is a reverse of the first electric current between the conductive seed layer plus the conductive material and a second anode disposed in electrical contact with the second bath; etching the conductive seed layer from atop a field region of the barrier layer; and etching the barrier layer from atop a field region of the substrate.

公开(公告)号：US20160333492A1

公开(公告)日：2016-11-17

申请号：US14711639

申请日：2015-05-13

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  Charles Sharbono ,  Sam K. Lee

IPC: C25D5/08 ,  C25D7/00 ,  C25D5/02

CPC classification number: C25D5/08 ,  C25D5/028 ,  C25D7/00 ,  C25D17/002 ,  C25D21/10

Abstract: A method for electrochemically processing a microfeature workpiece includes contacting the first surface of the microfeature workpiece with a plating electrolyte in a plating chamber, wherein the plating electrolyte includes at least one metal ion, flowing the plating electrolyte from a first plating electrolyte inlet at the first end of the workpiece to a second plating electrolyte outlet at the second end of the workpiece across the center point of the workpiece, and electrochemically depositing the at least one metal ion onto the first surface of the workpiece. Another method for electrochemically processing a microfeature workpiece includes contacting a first surface of the microfeature workpiece with a plating electrolyte having at least one metal ion, heating the second surface of the workpiece using a heating method, and electrochemically depositing the at least one metal ion onto the first surface of the workpiece.

Abstract translation: 一种用于电化学处理微特征工件的方法包括使微特征工件的第一表面与电镀室中的电镀电解液相接触，其中电镀电解质包括至少一种金属离子，使电镀电解液从第一电镀电解液入口流出 工件的端部穿过工件的中心点在工件的第二端处的第二电镀电解质出口，以及将至少一种金属离子电化学沉积到工件的第一表面上。 用于电化学处理微特征工件的另一种方法包括使微特征工件的第一表面与具有至少一种金属离子的电镀电解液接触，使用加热方法加热工件的第二表面，并将至少一种金属离子电化学沉积到 工件的第一个表面。

公开(公告)号：US11686005B1

公开(公告)日：2023-06-27

申请号：US17587063

申请日：2022-01-28

Applicant: Applied Materials, Inc.

Inventor： Kwan Wook Roh ,  Charles Sharbono ,  Kyle M. Hanson

IPC: C25D3/38 ,  C25D7/12 ,  C25D21/14 ,  C25D17/00

CPC classification number: C25D3/38 ,  C25D7/12 ,  C25D17/001 ,  C25D17/002 ,  C25D21/14

Abstract: Electroplating methods and systems are described that include adding a metal-ion-containing starting solution to a catholyte to increase a metal ion concentration in the catholyte to a first metal ion concentration. The methods and systems further include measuring the metal ion concentration in the catholyte while the metal ions electroplate onto a substrate and the catholyte reaches a second metal ion concentration that is less than the first metal ion concentration. The methods and systems additionally include adding a portion of an anolyte directly to the catholyte when the catholyte reaches the second metal ion concentration. The addition of the portion of the anolyte increases the metal ion concentration in the catholyte to a third metal ion concentration that is greater than or about the first metal ion concentration.

公开(公告)号：US20190019688A1

公开(公告)日：2019-01-17

申请号：US16036617

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Eric J. Bergman ,  John L. Klocke ,  Charles Sharbono ,  Kyle Moran Hanson ,  Paul McHugh

IPC: H01L21/311 ,  H01L21/324 ,  H01L21/687

Abstract: Methods of etching a semiconductor substrate may include applying an etchant to the semiconductor substrate. The semiconductor substrate may include an exposed region of an oxygen-containing material and an exposed region of a nitrogen-containing material. The methods may include heating the semiconductor substrate from a first temperature to a second temperature. The methods may include maintaining the semiconductor substrate at the second temperature for a period of time sufficient to perform an etch of the nitrogen-containing material relative to the oxygen-containing material. The methods may also include quenching the etch subsequent the period of time.

公开(公告)号：US20140262794A1

公开(公告)日：2014-09-18

申请号：US13835870

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Daniel K. Gebregziabiher ,  John Klocke ,  Charles Sharbono ,  Chandru Thambidurai ,  David J. Erickson

IPC: C25D21/12 ,  C25D7/12 ,  C25D5/18

CPC classification number: C25D21/12 ,  C25D5/18 ,  C25D7/12 ,  H01L21/2885 ,  H01L21/76898

Abstract: A method for electroplating a wafer detects plating bath failure based on a voltage change. The method is useful in plating wafers having TSV features. Voltage of each anode of a plating processor may be monitored. An abrupt drop in voltage signals a bath failure resulting from conversion of an accelerator such as SPS to it's by products MPS. Bath failure is delayed or avoided by current pulsing or current ramping. An improved plating bath has a catholyte with a very low acid concentration.

Abstract translation: 基于电压变化的电镀电镀方法检测电镀槽故障。 该方法在具有TSV特征的电镀晶片中是有用的。 可以监测电镀处理器的每个阳极的电压。 电压的突然下降表明由诸如SPS的加速器转换为由产品MPS引起的浴槽故障。 通过当前的脉冲或电流斜坡延迟或避免浴液故障。 改进的电镀浴具有非常低的酸浓度的阴极电解液。

公开(公告)号：US12146235B2

公开(公告)日：2024-11-19

申请号：US17686129

申请日：2022-03-03

Applicant: Applied Materials, Inc.

Inventor： Paul R. McHugh ,  Charles Sharbono ,  Jing Xu ,  John L. Klocke ,  Sam K. Lee ,  Keith Edward Ypma

IPC: C25D5/18 ,  C25D5/02 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12 ,  G06F30/20 ,  H01L21/768

Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.

公开(公告)号：US20230279576A1

公开(公告)日：2023-09-07

申请号：US17686129

申请日：2022-03-03

Applicant: Applied Materials, Inc.

Inventor： Paul R. McHugh ,  Charles Sharbono ,  Jing Xu ,  John L. Klocke ,  Sam K. Lee ,  Keith Edward Ypma

IPC: C25D5/18 ,  H01L21/768 ,  C25D5/02 ,  C25D21/12 ,  G06F30/20

CPC classification number: C25D5/18 ,  H01L21/76898 ,  C25D5/022 ,  C25D21/12 ,  G06F30/20

Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.

公开(公告)号：US09758893B2

公开(公告)日：2017-09-12

申请号：US14222407

申请日：2014-03-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Sam K. Lee ,  Charles Sharbono

IPC: C25D5/48 ,  C25D5/02 ,  C25D7/12 ,  C25F3/02 ,  C23C18/16 ,  H01L21/768 ,  C25F3/16 ,  H01L21/288 ,  H01L21/321

CPC classification number: C25D5/48 ,  C23C18/1689 ,  C25D5/022 ,  C25D7/12 ,  C25F3/02 ,  C25F3/16 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/7684 ,  H01L21/76898

Abstract: A non-uniform initial metal film is non-uniformly deplated to provide a more uniform metal film on a substrate. Electrochemical deplating may be performed by placing the substrate in a deplating bath formulated specifically for deplating, rather than for plating. The deplating bath may have a throwing power of 0.3 or less; or a bath conductivity of 1 mS/cm to 250 mS/cm. Reverse electrical current conducted through the deplating bath non-uniformly. electro-etches or deplates the metal film.

公开(公告)号：US20250051951A1

公开(公告)日：2025-02-13

申请号：US18929416

申请日：2024-10-28

Applicant: Applied Materials, Inc.

Inventor： Paul R. McHugh ,  Charles Sharbono ,  Jing Xu ,  John L. Klocke ,  Sam K. Lee ,  Keith Edward Ypma

IPC: C25D5/18 ,  C25D5/02 ,  C25D7/12 ,  C25D17/00 ,  C25D21/12 ,  G06F30/20 ,  H01L21/768

Abstract: A method of plating substrates may include placing a substrate in a plating chamber comprising a liquid, and applying a current to the liquid in the plating chamber to deposit a metal on exposed portions of the substrate, where the current may include alternating cycles of a forward plating current and a reverse deplating current. To determine the current characteristics, a model of a substrate may be simulated during the plating process to generate data points that relate characteristics of the plating process and a pattern on the substrate to a range nonuniformity of material formed on the substrate during the plating process. Using information from the data points, values for the forward and reverse currents may be derived and provided to the plating chamber to execute the plating process.