INTEGRATED CIRCUIT MANUFACTURE USING DIRECT WRITE LITHOGRAPHY
    3.
    发明申请
    INTEGRATED CIRCUIT MANUFACTURE USING DIRECT WRITE LITHOGRAPHY 有权
    使用直接写入式地图的集成电路制造

    公开(公告)号:US20150026650A1

    公开(公告)日:2015-01-22

    申请号:US13944129

    申请日:2013-07-17

    申请人: ARM LIMITED

    IPC分类号: G06F17/50 H01L21/027

    摘要: Integrated circuits are manufactured using a direct write lithography step to at least partially form at least one layer within the integrated circuit. The performance characteristics of an at least partially formed integrated circuit are measured and then the layout design to be applied with a direct write lithography step is varied in dependence upon those performance characteristics. Accordingly, the performance of an individual integrated circuit, wafer of integrated circuits or batch of wafers may be altered.

    摘要翻译: 使用直接写入光刻步骤制造集成电路,以至少部分地形成集成电路内的至少一个层。 测量至少部分形成的集成电路的性能特征,然后根据这些性能特性来改变要应用直写式光刻步骤的布局设计。 因此,可以改变单个集成电路,集成电路晶片或一批晶片的性能。