公开(公告)号：US10468291B2

公开(公告)日：2019-11-05

申请号：US15092414

申请日：2016-04-06

申请人： ASM America, Inc.

发明人： Mohith Verghese ,  Kyle Fondurulia ,  Carl White ,  Eric Shero ,  Darko Babic ,  Herbert Terhorst ,  Marko Peussa ,  Min Yan

IPC分类号： C23C16/40 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  C23C16/44 ,  C30B35/00 ,  H01L21/67

摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

公开(公告)号：US20160233124A1

公开(公告)日：2016-08-11

申请号：US15092414

申请日：2016-04-06

申请人： ASM America, Inc,

发明人： Mohith Verghese ,  Kyle Fondurulia ,  Carl White ,  Eric Shero ,  Darko Babic ,  Herbert Terhorst ,  Marko Peussa ,  Min Yan

IPC分类号： H01L21/687 ,  C23C16/458 ,  C23C16/455

CPC分类号： H01L21/68785 ,  C23C16/4408 ,  C23C16/455 ,  C23C16/45517 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45582 ,  C23C16/45587 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4586 ,  C30B35/00 ,  H01L21/67236 ,  H01L21/68714 ,  H01L21/68742

摘要： An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

摘要翻译： 原子沉积（ALD）薄膜沉积设备包括沉积室，其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。 沉积室包括与空间连通的气体入口。 气体系统构造成将气体输送到沉积室的气体入口。 气体系统的至少一部分位于沉积室上方。 气体系统包括配置成混合多个气流的混合器。 转移构件与混合器和气体入口流体连通。 传送构件包括一对水平扩散壁，其构造成在进入气体入口之前沿水平方向扩展气体。