-
公开(公告)号:US10266946B2
公开(公告)日:2019-04-23
申请号:US15400793
申请日:2017-01-06
申请人: ASM AMERICA, INC.
发明人: Todd Dunn , Carl White , Mike Halpin , Eric Shero , Herbert Terhorst , Jerry Winkler
IPC分类号: C23C16/455 , H01L21/02 , H01L21/285
摘要: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.
-
公开(公告)号:US09892908B2
公开(公告)日:2018-02-13
申请号:US14660755
申请日:2015-03-17
申请人: ASM America, Inc.
发明人: Fred Pettinger , Carl White , Dave Marquardt , Sokol Ibrani , Eric Shero , Todd Dunn , Kyle Fondurulia , Mike Halpin
IPC分类号: H01L21/02 , C23C16/455 , C23C16/44 , H01J37/32
CPC分类号: H01L21/02104 , C23C16/4409 , C23C16/4411 , C23C16/45565 , C23C16/4557 , C23C16/45572 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32532
摘要: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.
-
公开(公告)号:US10370761B2
公开(公告)日:2019-08-06
申请号:US15400793
申请日:2017-01-06
申请人: ASM AMERICA, INC.
发明人: Todd Dunn , Carl White , Mike Halpin , Eric Shero , Herbert Terhorst , Jerry Winkler
IPC分类号: C23C16/455 , H01L21/02 , H01L21/285
摘要: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.
-
公开(公告)号:US10468291B2
公开(公告)日:2019-11-05
申请号:US15092414
申请日:2016-04-06
申请人: ASM America, Inc.
发明人: Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号: C23C16/40 , H01L21/687 , C23C16/455 , C23C16/458 , C23C16/44 , C30B35/00 , H01L21/67
摘要: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
-
公开(公告)号:US20170121818A1
公开(公告)日:2017-05-04
申请号:US15400793
申请日:2017-01-06
申请人: ASM AMERICA, INC.
发明人: Todd Dunn , Carl White , Mike Halpin , Eric Shero , Herbert Terhorst , Jerry Winkler
IPC分类号: C23C16/455
CPC分类号: C23C16/45544 , C23C16/455 , C23C16/45512 , C23C16/45561 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45576 , C23C16/45589 , H01L21/0228 , H01L21/0262 , H01L21/28556
摘要: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.
-
公开(公告)号:US20160233124A1
公开(公告)日:2016-08-11
申请号:US15092414
申请日:2016-04-06
申请人: ASM America, Inc,
发明人: Mohith Verghese , Kyle Fondurulia , Carl White , Eric Shero , Darko Babic , Herbert Terhorst , Marko Peussa , Min Yan
IPC分类号: H01L21/687 , C23C16/458 , C23C16/455
CPC分类号: H01L21/68785 , C23C16/4408 , C23C16/455 , C23C16/45517 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45563 , C23C16/45582 , C23C16/45587 , C23C16/45591 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4586 , C30B35/00 , H01L21/67236 , H01L21/68714 , H01L21/68742
摘要: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
摘要翻译: 原子沉积(ALD)薄膜沉积设备包括沉积室,其被配置为将薄膜沉积在安装在其中限定的空间内的晶片上。 沉积室包括与空间连通的气体入口。 气体系统构造成将气体输送到沉积室的气体入口。 气体系统的至少一部分位于沉积室上方。 气体系统包括配置成混合多个气流的混合器。 转移构件与混合器和气体入口流体连通。 传送构件包括一对水平扩散壁,其构造成在进入气体入口之前沿水平方向扩展气体。
-
公开(公告)号:US20150187568A1
公开(公告)日:2015-07-02
申请号:US14660755
申请日:2015-03-17
申请人: ASM America, Inc.
发明人: Fred Pettinger , Carl White , Dave Marquardt , Sokol Ibrani , Eric Shero , Todd Dunn , Kyle Fondurulia , Mike Halpin
IPC分类号: H01L21/02
CPC分类号: H01L21/02104 , C23C16/4409 , C23C16/4411 , C23C16/45565 , C23C16/4557 , C23C16/45572 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32532
摘要: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.
摘要翻译: 提供了与管理半导体工艺模块的工艺进料条件有关的实施例。 在一个示例中,提供了一种用于半导体处理模块的气体通道板。 示例性气体通道板包括热交换表面,其包括通过中间间隔彼此分离的多个热交换结构。 示例性气体通道板还包括热交换流体引导板支撑表面,用于在多个热交换结构之上支撑热交换流体导向板,使得多个热交换结构的至少一部分与热交换流体间隔开 导演板。
-
-
-
-
-
-