公开(公告)号：US12300505B2

公开(公告)日：2025-05-13

申请号：US18340261

申请日：2023-06-23

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/033 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/768

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US20200051829A1

公开(公告)日：2020-02-13

申请号：US16659012

申请日：2019-10-21

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/768 ,  H01L21/02 ,  C23C16/56 ,  C23C16/455 ,  C23C16/04 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/033

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US20190086807A1

公开(公告)日：2019-03-21

申请号：US16137974

申请日：2018-09-21

Applicant: ASM IP Holding B.V.

Inventor： Krzysztof Kachel ,  David de Roest

IPC: G03F7/16 ,  C23C16/455

Abstract: The disclosure relates to a sequential infiltration synthesis for treatment of infiltrateable material.

公开(公告)号：US10928731B2

公开(公告)日：2021-02-23

申请号：US16137974

申请日：2018-09-21

Applicant: ASM IP Holding B.V.

Inventor： Krzysztof Kachel ,  David de Roest

IPC: G03F7/16 ,  C23C16/455 ,  G03F1/72 ,  G03F7/40 ,  C23C16/40 ,  C23C16/04

Abstract: The disclosure relates to a sequential infiltration synthesis for treatment of infiltrateable material. Examples of the disclosure provide a method of forming a structure that includes providing the substrate with a infiltrateable material in a reaction chamber and infiltrating the infiltrateable material with infiltration material during one or more infiltration cycles.

公开(公告)号：US10923361B2

公开(公告)日：2021-02-16

申请号：US16659012

申请日：2019-10-21

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/32 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US10121699B2

公开(公告)日：2018-11-06

申请号：US15432263

申请日：2017-02-14

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen ,  Krzysztof Kachel ,  Harald Profijt

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L23/532 ,  H01L21/283

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

公开(公告)号：US20170352550A1

公开(公告)日：2017-12-07

申请号：US15486124

申请日：2017-04-12

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  C23C16/455 ,  C23C16/04 ,  C23C16/56 ,  H01L21/768 ,  H01L21/02

CPC classification number: H01L21/31144 ,  C23C16/04 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/32 ,  H01L21/32139 ,  H01L21/76834

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US20230343601A1

公开(公告)日：2023-10-26

申请号：US18340261

申请日：2023-06-23

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/32 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768

CPC classification number: H01L21/31144 ,  H01L21/02186 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/02178 ,  H01L21/32 ,  C23C16/04 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02118 ,  H01L21/0228 ,  H01L21/31138 ,  H01L21/76834

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US11728175B2

公开(公告)日：2023-08-15

申请号：US17130902

申请日：2020-12-22

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/32 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768

CPC classification number: H01L21/31144 ,  C23C16/04 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/32 ,  H01L21/32139 ,  H01L21/76834

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US10903113B2

公开(公告)日：2021-01-26

申请号：US16773064

申请日：2020-01-27

Applicant: ASM IP Holding B.V.

Inventor： Han Wang ,  Qi Xie ,  Delphine Longrie ,  Jan Willem Maes ,  David de Roest ,  Julian Hsieh ,  Chiyu Zhu ,  Timo Asikainen ,  Krzysztof Kachel ,  Harald Profijt

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/311 ,  H01L23/532 ,  C23C16/455 ,  C23C16/04 ,  C23C16/34 ,  C23C16/56 ,  C23C16/00

Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.