公开(公告)号：US20250029832A1

公开(公告)日：2025-01-23

申请号：US18905741

申请日：2024-10-03

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma

IPC: H01L21/02

Abstract: Methods for depositing silicon-containing thin films on a substrate in a reaction space are provided. The methods can include vapor deposition processes comprising at least one deposition cycle including sequentially contacting the substrate with a silicon precursor comprising a halosilane and a second reactant comprising an acyl halide. In some embodiments a Si(O,C,N) thin film is deposited and the concentration of nitrogen and carbon in the film can be tuned by adjusting the deposition conditions.

公开(公告)号：US12094686B2

公开(公告)日：2024-09-17

申请号：US18188255

申请日：2023-03-22

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: H01L21/311 ,  C23F1/12 ,  C23G5/00 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01J37/32009 ,  C23F1/12 ,  C23G5/00 ,  H01L21/31116 ,  H01L21/32135

Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

公开(公告)号：US12040195B2

公开(公告)日：2024-07-16

申请号：US18156085

申请日：2023-01-18

Applicant: ASM IP HOLDING B.V.

Inventor： Charles Dezelah ,  Varun Sharma

IPC: H01L21/3065 ,  C23F1/32 ,  H01J37/32

CPC classification number: H01L21/30655 ,  C23F1/32 ,  H01J37/32009

Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which a substrate comprising a metal, metal oxide, metal nitride or metal oxynitride layer is contacted with an etch reactant comprising an vapor-phase N-substituted derivative of amine compound. In some embodiments the etch reactant reacts with the substrate surface to form volatile species including metal atoms from the substrate surface. In some embodiments a metal or metal nitride surface is oxidized as part of the ALE cycle. In some embodiments a substrate surface is contacted with a halide as part of the ALE cycle. In some embodiments a substrate surface is contacted with a plasma reactant as part of the ALE cycle.

公开(公告)号：US20240222107A1

公开(公告)日：2024-07-04

申请号：US18395861

申请日：2023-12-26

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/56

CPC classification number: H01L21/02115 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02205 ,  H01L21/0228

Abstract: The disclosure relates to methods of depositing carbon material on a substrate. The method comprises providing a substrate in a reaction chamber and depositing material comprising metal and carbon conformally on the substrate. A halogen compound comprising a halogen and a non-halogen element is provided into the reaction chamber in a vapor phase to substantially remove the metal from the material comprising metal and carbon to form carbon material comprising primarily carbon on the substrate. The disclosure further relates to structures and electronic devices manufactured using methods disclosed herein, and to substrate processing assemblies.

公开(公告)号：US20240175129A1

公开(公告)日：2024-05-30

申请号：US18518042

申请日：2023-11-22

Applicant: ASM IP Holding B.V.

Inventor： Bart Vermeulen ,  Varun Sharma ,  Jerome Innocent ,  Charles Dezelah ,  Michael Eugene Givens

IPC: C23C16/455 ,  C23C16/22

CPC classification number: C23C16/45527 ,  C23C16/22 ,  C23C16/45553

Abstract: Disclosed are methods for forming layers comprising a group 14 element, a pnictogen, and a chalcogen. In some embodiments, the group 14 element comprises germanium, the pnictogen comprises antimony, and the chalcogen comprises tellurium. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises exposing a substrate to two different group 14 precursors, to two different pnictogen precursors, or to two different chalcogen precursors. Further discloses are related systems and methods. Suitable systems include atomic layer deposition systems. Suitable devices include phase change memory devices.

公开(公告)号：US20230374671A1

公开(公告)日：2023-11-23

申请号：US18357856

申请日：2023-07-24

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi Haukka ,  Marko Tuominen ,  Chiyu Zhu

IPC: C23F4/02 ,  C23F1/12 ,  H01L21/3213 ,  C09K13/00 ,  H01L21/311 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32 ,  H01L21/3065

CPC classification number: C23F4/02 ,  C23F1/12 ,  H01L21/32135 ,  C09K13/00 ,  H01L21/31122 ,  C09K13/08 ,  C09K13/10 ,  H01J37/32009 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138

Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

公开(公告)号：US11769670B2

公开(公告)日：2023-09-26

申请号：US17498805

申请日：2021-10-12

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma

IPC: H01L21/285 ,  C23C16/06 ,  C23C16/455 ,  C23C16/40

CPC classification number: H01L21/28568 ,  C23C16/06 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/28556 ,  H01L21/28562

Abstract: Methods for forming a rhenium-containing film on a substrate by a cyclical deposition are disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a rhenium precursor; and contacting the substrate with a second vapor phase reactant. Semiconductor device structures including a rhenium-containing film formed by the methods of the disclosure are also disclosed.

公开(公告)号：US11640899B2

公开(公告)日：2023-05-02

申请号：US17452156

申请日：2021-10-25

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma ,  Suvi P. Haukka ,  Marko J. Tuominen ,  Chiyu Zhu

IPC: H01J37/32 ,  C23F1/12 ,  H01L21/311 ,  C23G5/00 ,  H01L21/3213

Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.

公开(公告)号：US20230102839A1

公开(公告)日：2023-03-30

申请号：US17929585

申请日：2022-09-02

Applicant: ASM IP HOLDING B.V.

Inventor： Tom E. Blomberg ,  Varun Sharma

IPC: H01L21/67 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/3065

Abstract: To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.

公开(公告)号：US20230032495A1

公开(公告)日：2023-02-02

申请号：US17872054

申请日：2022-07-25

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma ,  Michael Givens

IPC: H01L21/3065 ,  H01L21/67

Abstract: The present disclosure is directed to methods in situ generation of a hydrogen halide for use in an etching process for selective etching of a material from other(s) on a surface layer of a substrate, to methods of etching utilizing the in situ generated hydrogen halide, and to systems carrying the out the disclosed processes.