公开(公告)号：US20240234129A1

公开(公告)日：2024-07-11

申请号：US18402950

申请日：2024-01-03

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Michael Eugene Givens ,  Eric Jen Cheng Liu ,  Eric James Shero ,  Fu Tang ,  Marko Tuominen ,  Eva Elisabeth Tois ,  Andrea Illiberi ,  Tatiana Ivanova ,  Paul Ma ,  Gejian Zhao

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02178 ,  H01L21/02208 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/31111

Abstract: Methods and systems for forming structure comprising a threshold voltage tuning layer are disclosed. Exemplary methods include providing a treatment reactant to a reaction chamber to form a treated surface on the substrate surface and depositing threshold voltage tuning material overlying the treated surface. Additionally or alternatively, exemplary methods can include direct formation of metal silicide layers. Additionally or alternatively, exemplary methods can include use of an etchant.

公开(公告)号：US20210207269A1

公开(公告)日：2021-07-08

申请号：US17136659

申请日：2020-12-29

Applicant: ASM IP Holding B.V.

Inventor： Jianqiu Huang ,  Gejian Zhao ,  Kyle Fondurulia

IPC: C23C16/455 ,  F16K7/14

Abstract: Gas supply assemblies and reactors systems including the gas supply assemblies are disclosed. An exemplary gas supply assembly includes a vessel, a valve plate, a housing encasing the vessel and the valve plate, a gas feedthrough having a first end interior of the housing and a second end exterior of the housing, and one or more valves attached to the valve plate, wherein at least one valve is fluidly coupled to an interior of the vessel. The assemblies can further include a removable gas line having a first end coupled to the at least one valve and a second end coupled to the gas feedthrough. Additionally or alternatively, a gas supply assembly can include one or more valve plate leveling devices coupled to the valve plate.

公开(公告)号：US11976359B2

公开(公告)日：2024-05-07

申请号：US17136659

申请日：2020-12-29

Applicant: ASM IP Holding B.V.

Inventor： Jianqiu Huang ,  Gejian Zhao ,  Kyle Fondurulia

IPC: C23C16/455 ,  F15B13/08 ,  F16K7/14 ,  F16K27/00 ,  F17C13/04

CPC classification number: C23C16/45561 ,  F15B13/0817 ,  F16K7/14 ,  F16K27/003 ,  F17C13/04

Abstract: Gas supply assemblies and reactors systems including the gas supply assemblies are disclosed. An exemplary gas supply assembly includes a vessel, a valve plate, a housing encasing the vessel and the valve plate, a gas feedthrough having a first end interior of the housing and a second end exterior of the housing, and one or more valves attached to the valve plate, wherein at least one valve is fluidly coupled to an interior of the vessel. The assemblies can further include a removable gas line having a first end coupled to the at least one valve and a second end coupled to the gas feedthrough. Additionally or alternatively, a gas supply assembly can include one or more valve plate leveling devices coupled to the valve plate.

公开(公告)号：US20230197796A1

公开(公告)日：2023-06-22

申请号：US17660389

申请日：2022-04-22

Applicant: ASM IP HOLDING B.V.

Inventor： Fu Tang ,  Eric James Shero ,  Gejian Zhao ,  Eric Jen Cheng Liu

IPC: H01L29/40 ,  H01L21/28

CPC classification number: H01L29/401 ,  H01L21/28088

Abstract: Threshold voltage (Vt) tuning layers may be sensitive to etching by reactants used to deposit overlying gate material, such as metal nitride. Methods for depositing Vt tuning layers are provided. In some embodiments Vt tuning layers may comprise a Vt tuning material in a neutral matrix. In some embodiments, processes for reducing or eliminating the etching of Vt tuning layers by halide reactants are described. In some embodiments a Vt tuning layer, such as a metal oxide layer, is treated by a nitridation process following deposition and prior to subsequent deposition of a metal nitride capping layer. In some embodiments an etch-protective layer, such as a NbO layer, is deposited over a Vt tuning layer prior to deposition of an overlying metal nitride layer.